UPC1654 NEC | Alldatasheet

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Technical content

1.0 GHz SILICON

  • BROADBAND PERFORMANCE: 10 to 1100 MHz
  • INPUT AND OUTPUT MATCHED TO 50 Ω
  • AVAILABLE IN CHIP OR HERMETIC PACKAGE
  • EXCELLENT LINEARITY Over +10 dBm Saturated Output Power
  • CASCADABLE FOR MULTISTAGE APPLICATIONS
  • HIGH RELIABILITY

FEATURES

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICC Operating Current mA 38 43 48 G S Small Signal Gain dB 17 19 21 BW Bandwidth (The gain is 3 dB down from the gain at 100 MHz.) MHz 950 1100 PSAT Saturated Output Power dBm 9 10 NF Noise Figure dB 5.5 6.5 RL IN Input Return Loss dB 15 18 RL OUT Output Return Loss dB 9 12 ISOL Isolation dB 24 27 R TH (J-C) Thermal Resistance (Junction to Case) °C/W 30

DESCRIPTION

The UPC1654A Silicon Microwave Monolithic IC is designed for general purpose and IF amplifier applications. This ampli- fier is matched to 50 Ω and is cascadable for multi-stage applications. The UPC1654A features excellent linearity with 10 dBm saturated output power and broadband performance up to 1100 MHz. Reliability and performance uniformity are assured by NEC's stringent quality control procedures. The UPC1654A is available in a hermetically sealed package. ELECTRICAL CHARACTERISTICS (TA = 25°C, VCC = 10 V, f = 500 MHz) VCC = 11.5 V VCC = 10 V VCC = 8 V 1 20 50 100 200 500 1000 2000 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY Frequency, f (MHz) Noise Figure, NF (dB) Associated Gain, GA (dB) California Eastern Laboratories

ABSOLUTE MAXIMUM RATINGS (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCC Supply Voltage V 12 PT Total Power Dissipation2 mW 750 PIN Input Power dBm +10 TOP Operating Temperature °C -55 to +125 TSTG Storage Temperature °C -65 to +200 TYPICAL PERFORMANCE CURVES (TA = 25°C) VCC OUT GND IN EQUIVALENT CIRCUIT Output Power, POUT (dBm) VCC = 11.5 V VCC = 10 V VCC = 8 V f = 500 MHz -15 -13 -11 -9 -7 Input Power, PIN (dBm) 0 2 4 6 8 10 12 CIRCUIT CURRENT vs. SUPPLY VOLTAGE Supply Voltage, VCC (V) Circuit Current, ICC (mA) Frequency, f (MHz) SATURATED OUTPUT POWER vs. FREQUENCY VCC = 10 V 50 100 200 500 1000 2000 Saturated Output Power (dBm) OUTPUT POWER vs. INPUT POWER AND VOLTAGE +15 +10 -10 -15 -20 TA = 25˚C TA = 95˚C f = 1100 MHz f = 500 MHz OUTPUT POWER vs. INPUT POWER, TEMPERATURE AND FREQUENCY Output Power, POUT (dBm) Input Power, PIN (dBm) Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. At T A = +125°C.

TYPICAL PERFORMANCE CURVES (TA = 25°C) EXCLUSIVE AGENT FOR NEC Corporation RF & MICROWAVE SEMICONDUCTOR PRODUCTS - U.S. & CANADA CALIFORNIA EASTERN LABORATORIES, INC · Headquarters · 4590 Patrick Henry Drive · Santa Clara, CA 95054-1817 · (408) 988-3500 · Telex 34-6393/FAX (408) 988-0279 DATA SUBJECT TO CHANGE WITHOUT NOTICE Ambient Temperature, TA (°C) Operating Current, ICC (mA) Input Return Loss (dB) Output Return Loss (dB) INPUT AND OUTPUT RETURN LOSS vs. FREQUENCY VCC = 10 V -50 0 50 100 150 ICC

500 MHz Linear Gain

1000 MHz Linear Gain

Gain, GS (dB) OPERATING CURRENT AND LINEAR GAIN vs. AMBIENT TEMPERATURE ISOLATION vs. FREQUENCY VCC = 10 V 50 100 200 500 1000 2000 -10 -20 -30 -40 Frequency, f (MHz) Isolation, (dB) OUTLINE DIMENSIONS (Units in mm) Output Input -10 -20 -30 -40 50 100 200 500 1000 2000 VCC = 10 V UPC1654A PACKAGE OUTLINE 15 (TO-33) φ9.40 MAX φ8.50 MAX

6.60 MAX

19.0 MIN

0.38 φ0.45 φ5.08 1 3 0.8 0.8 45˚ Frequency, f (GHz) Notes: 1. Case should be connected to ground for stable RF operation and optimum thermal dissipation. 2. All dimensions are typical unless otherwise noted. LEAD CONNECTIONS 1. Output 2. V CC 3. Input 4. GND