UPB1003GS

UPB1005GS NEC | Alldatasheet

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Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. BIPOLAR ANALOG + DIGITAL INTEGRATED CIRCUIT µµµµPB1005GS REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER + PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER Document No. P13860EJ3V0DS00 (3rd edition) Date Published April 2000 N CP(K) Printed in Japan DATA SHEET The mark shows major revised points. © 1998, 2000

DESCRIPTION

The µPB1005GS is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005GS features shrink package, fixed prescaler and supply voltage. The 30-pin plastic SSOP package is suitable for high density surface mounting. The fixed division internal prescaler is needless to input serial counter data. Supply voltage is 3 V. Thus, the µPB1005GS can make RF block fewer components and lower power consumption. This IC is manufactured using NEC’s 20 GHz fT NESAT TM III silicon bipolar process. This process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface from pollution and prevent corrosion/migration. Thus, this IC realizes excellent performance, uniformity and reliability.

FEATURES

• Double conversion : f REFin = 16.368 MHz, f2ndIFout = 4.092 MHz
• Integrated RF block : RF/IF frequency down-converter + PLL frequency synthesizer
• High-density surface mountable : 30-pin plastic SSOP (9.85 × 6.1 × 2.0 mm)
• Needless to input counter data : fixed division internal prescaler
• VCO side division : ÷ 200 (÷ 25, ÷ 8 serial prescaler)
• Reference division : ÷ 2
• Supply voltage : V CC = 2.7 to 3.3 V
• Low current consumption : I CC = 45.0 mA TYP.@VCC = 3.0 V
• Gain adjustable externally : Gain control voltage pin (control voltage up vs. gain down) APPLICATION
• Consumer use GPS receiver of reference frequency 16.368 MHz, 2nd IF frequency 4.092 MHz

ORDERING INFORMATION

Part Number Package Supplying Form µPB1005GS-E1 30-pin plastic SSOP (7.62 mm (300)) Embossed tape 16 mm wide. Pin 1 is in tape pull-out direction. QTY 2.5 kpcs/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPB1005GS)

Data Sheet P13860EJ3V0DS002 µµµµPB1005GS PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM IF-MIXin GND (IF-MIX) RF-MIXout VCC (RF-MIX) RF-MIXin GND (RF-MIX) VCC (1stLO-OSC) 1stLO-OSC1 1stLO-OSC2 GND (1stLO-OSC) VCC (phase detector) PD-V out3 PD-V out2 PD-V out1 GND (phase detector) V CC (IF-MIX) VGC (IF-MIX) IF-MIXout GND (2ndIF-AMP) 2ndlFin1 2ndlFin2 2ndlFbypass VCC (2ndIF-AMP) 2ndIFout REF out VCC (reference block) REF in GND (divider block) LO out VCC (divider block) PD ÷2 ÷25

Data Sheet P13860EJ3V0DS00 3 µµµµPB1005GS PRODUCT LINE-UP (TA = +25°°°°C, VCC = 3.0 V) Type Part Number Functions (Frequency unit: MHz) VCC (V) ICC (mA) CG (dB) TA (°C) Package Status µPC2756T 6-pin minimold µPC2756TB RF down-converter with osc. Tr2.7 to 3.3 61 4 6-pin super minimold General Purpose Wideband Separate IC µPC2753GR IF down-converter with gain control amplifier 2.7 to 3.3 6.5 60 to 79 −40 to +85 20-pin plastic SSOP Available µPB1003GS RF/IF down-converter + PLL synthesizer REF = 18.414 1stIF = 28.644/2ndIF = 1.023 2.7 to 3.3 37.5 72 to 92 −20 to +85 µPB1004GS 2.7 to 3.3 37.5 72 to 92 −20 to +85 DiscontinuedClock Frequency Specific 1 chip IC µPB1005GS RF/IF down-converter + PLL synthesizer REF = 16.368 1stIF = 61.380/2ndIF = 4.092 2.7 to 3.3 45.0 72 to 92 −40 to +85 30-pin plastic SSOP Available Remark Typical performance. Please refer to ELECTRICAL CHARACTERISTICS in detail. To know the associated products, please refer to their latest data sheets. SYSTEM APPLICATION EXAMPLE GPS receiver RF block diagram

1575.42 MHz

µ PC2749TBexample: 1540f0 RF-MIX RF-MIXout 60f0 BPF IF-MIXin IF-MIX 40f0 LPF VGC IF-MIXout 2ndlFin1 2ndlFin22ndlFbypass 2ndlF-Amp 16f0 4f0 16f0

4.092 MHz

16.368 MHz

• f0 = 1.023 MHz in the diagram.
• PB1005GS is in .µ 64f0 Caution This diagram schematically shows only the µµµµPB1005GS’s internal functions on the system. This diagram does not present the actual application circuits.

Data Sheet P13860EJ3V0DS004 µµµµPB1005GS ABSOLUTE MAXIMUM RATINGS Parameter Symbol Conditions Ratings Unit Supply Voltage V CC TA = +25°C3 . 6 V Total Circuit Current I CC TA = +25°C 128 mA Power Dissipation P D Mounted on double-sided copper clad 50 × 50 × 1.6 mm epoxy glass PWB at TA = +85°C 464 mW Operating Ambient Temperature T A −40 to +85 °C Storage Temperature T stg −55 to +150 °C RECOMMENDED OPERATING RANGE Parameter Symbol MIN. TYP. MAX. Unit Supply Voltage V CC 2.7 3.0 3.3 V Operating Ambient Temperature T A −40 +25 +85 °C RF Input Frequency f RFin  1575.42  MHz 1stLO Oscillating Frequency f 1stLOin 1616.80 1636.80 1656.80 MHz 1stIF Input Frequency f 1stIFin  61.380  MHz 2ndLO Input Frequency f 2ndLOin  65.472  MHz 2ndIF Input/output Frequency f 2ndIFin f2ndIFout  4.092  MHz Reference Input/output Frequency fREFin fREFout  16.368  MHz

Data Sheet P13860EJ3V0DS00 5 µµµµPB1005GS ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C, VCC = 3.0 V) Parameter Symbol Conditions MIN. TYP. MAX. Unit Total Circuit Current I CC total I CC 1 + ICC 2 + ICC 3 + ICC 4 32.0 45.0 60.0 mA RF Down-converter Block (fRFin = 1575.42 MHz, f1stLOin = 1636.80 MHz, PLOin = −10 dBm, ZL = ZS = 50 Ω ) Circuit Current 1 I CC 1 No Signals 6.0 10.0 14.0 mA RF Conversion Gain CG RF PRFin = −40 dBm 12.5 15.5 18.5 dB RF-SSB Noise Figure NF RF PRFin = −40 dBm 7 10 13 dB Maximum IF Output Power P O(sat)RF PRFin = −10 dBm −5.5 −2.5 +0.5 dBm IF Down-converter Block (f1stIFIn = 61.38 MHz, f2ndLOIn = 65.472 MHz, ZS = 50 Ω , ZL = 2 kΩ ) Circuit Current 2 I CC 2 No Signals 3.4 5.3 7.2 mA IF Voltage Conversion Gain CG(GV)IF at Maximum Gain, P1stIFin = −50 dBm 38 41 44 dB IF-SSB Noise Figure NF IF at Maximum Gain, P1stIFin = −50 dBm 8.5 11.5 14.5 dB Maximum 2nd IF Output Power PO(sat)IF at Maximum Gain, P1stIFin = −20 dBm −9.5 −6.5 −3.5 dBm Gain Control Voltage V GC Voltage at Maximum Gain of CGIF  1.0 V Gain Control Range D GC P1stIFin = −50 dBm 20  dB 2nd IF Amplifier (f2ndIF = 4.092 MHz, ZS = 50 Ω , ZL = 2 kΩ ) Circuit Current 3 I CC 3 No Signals 1.55 2.40 3.25 mA Voltage Gain G V P2ndIFin = −60 dBm 37 40 43 dB Maximum Output Power P O(sat) P2ndIFin = −30 dBm −14.5 −11.5 −8.5 dBm PLL Synthesizer Block Circuit Current 4 I CC 4 PLL All Block Operating 18.5 28.5 38.5 mA Phase Comparing Frequency fPD PLL Loop 8.0 8.184 8.4 MHz Reference Input Minimum Level VREFin ZL = 10 kΩ //20 pF (Impedance of measurement equipment) 200  mV P-P Loop Filter Output Level (H) VLP(H) 2.8  V Loop Filter Output Level (L) VLP(L)  0.4 V Reference Output Swing V REFout ZL = 10 kΩ //2 pF (Impedance of measurement equipment) 1.0  VP-P

Data Sheet P13860EJ3V0DS006 µµµµPB1005GS STANDARD CHARACTERISTICS (Unless otherwise specified TA = +25°°°°C, VCC = 3.0 V) Parameter Symbol Conditions Reference Unit RF Down-converter Block (P1stLOin = −10 dBm, ZL = ZS = 50 Ω ) LO Leakage to IF Pin LO if f1stLOin = 1636.80 MHz −30 dBm LO Leakage to RF Pin LO rf f1stLOin = 1636.80 MHz −30 dBm Input 3rd Order Intercept Point IIP3RF f RFin1 = 1600 MHz, fRFin2 = 1605 MHz f1stLOin = 1660 MHz −13 dBm IF Down-converter Block (1stLO oscillating, ZS = 50 Ω , ZL = 2 kΩ ) LO Leakage to 2nd IF Pin LO 2ndif f2ndLOin = 65.472 MHz −20 dBm LO Leakage to 1st IF Pin LO 1stif f2ndLOin = 65.472 MHz −40 dBm Input 3rd Order Intercept Point IIP3IF f 1stIFin1 = 61.38 MHz, f1stIFIn2 = 61.48 MHz f2ndLOin = 65.472 MHz −34 dBm

Data Sheet P13860EJ3V0DS00 7 µµµµPB1005GS PIN EXPLANATION Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Function and Application Internal Equivalent Circuit 3R X - M I Xout  1.68 Output pin of RF mixer. 1st IF filter must be inserted between pin 1 & 3. 4V CC (RF-MIX) 2.7 to 3.3  Supply voltage pin of RF mixer block. This pin must be decoupled with capacitor (eg. 1 000 pF). 5R F - M I Xin  1.20 Input pin of RF mixer. 1 575.42 MHz band pass filter can be inserted between pin 5 and external LNA. 6 GND (RF-MIX) 0  Ground pin RF mixer. 1stLO -OSC 7V CC (1stLO-OSC) 2.7 to 3.3  Supply voltage pin of differential amplifier for 1st LO oscillator circuit. 81 s t L O - O S C 1  1.88 91 s t L O - O S C 2  1.88 Pin 8 & 9 are each base pin of differential amplifier for 1st LO oscillator. These pins should be equipped with LC and varactor to oscillate on 1636.80 MHz as VCO.

10 GND

(1stLO-OSC) 0  Ground pin of differential amplifier for 1st LO oscillator circuit. 8 9 RF-MIX or Prescaler input VCC

11 V CC (phase

detector) 2.7 to 3.3  Supply voltage pin of phase detector and active loop filter.

12 PD-V out3 Pull-up

13 PD-V out2  Output in

14 PD-V out1 Pull-up

Pins of active loop filter for tuning voltage output. The active transistors configured with darlington pair are built on chip. Pin 14 should be pulled down with external resistor. Pin 12 to 13 should be equipped with external RC in order to adjust dumping factor and cutoff frequency. This tuning voltage output must be connected to varactor diode of 1st LO-OSC.

15 GND (phase

detector) 0  Ground pin of phase detector + active loop filter. PD

Data Sheet P13860EJ3V0DS008 µµµµPB1005GS Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Function and Application Internal Equivalent Circuit

16 V CC

(divider block) 2.7 to 3.3  Supply voltage pin of prescalers. 17 LO out  2.08 Monitor pin of comparison frequency at phase detector.

18 GND

(divider block) 0  Ground pin of prescalers + LOout amplifier 1st LO OSC ÷25 ÷8 IF MIX PD PD Ref. 19 REF in  1.96 Input pin of reference frequency. This pin should be equipped with external 16.368 MHz oscillator (e.g. TCXO).

20 V CC

(reference block) 2.7 to 3.3  Supply voltage pin of input/output amplifiers in reference block. 21 REF out  1.65 Output pin of reference frequency. The frequency from pin 19 can be took out as 1 V P-P swing. PD 22 2ndIF out  1.56 Output pin of 2nd IF amplifier. This pin output 4.092 MHz clipped sinewave. This pin should be equipped with external inverter to adjust level to next stage on user’s system.

23 V CC

(2ndIF-AMP) 2.7 to 3.3  Supply voltage pin of 2nd IF amplifier. 24 2ndIF bypass  2.30 Bypass pin of 2nd IF amplifier input 1. This pin should be grounded through capacitor. 25 2ndIF in2  2.35 Pin of 2nd IF amplifier input 2. This pin should be grounded through capacitor. 26 2ndIF in1  2.35 Pin of 2nd IF amplifier input 1. 2nd IF filter can be inserted between pin 26 & 28.

27 GND

(2ndIF-AMP) 0  Ground pin of 2nd IF amplifier.

Data Sheet P13860EJ3V0DS00 9 µµµµPB1005GS Pin No. Pin Name Applied Voltage (V) Pin Voltage (V) Function and Application Internal Equivalent Circuit 28 IF-MIX out  1.15 Output pin from IF mixer. IF mixer output signal goes through gain control amplifier before this emitter follower output port. 29 V GC (IF-MIX) 0 to 3.3  Gain control voltage pin of IF mixer output amplifier. This voltage performs forward control GC up → Gain down). 30 V CC (IF-MIX) 2.7 to 3.3  Supply voltage pin of IF mixer, gain control amplifier and emitter follower transistor. 1I F - M I Xin  2.05 Input pin of IF mixer. 2 GND (IF-MIX) 0  Ground pin of IF mixer. 2nd LO Caution Ground pattern on the board must be formed as wide as possible to minimize ground impedance.

Data Sheet P13860EJ3V0DS0010 µµµµPB1005GS TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25°°°°C, VCC = 3.0 V) 01 2 34 TOTAL CIRCUIT CURRENT vs. SUPPLY VOLTAGE Supply Voltage VCC (V) Total Circuit Current ICCTOTAL (mA) TA = + 85°C TA = − 40°C TA = + 25°C No signals 01234 CIRCUIT CURRENT vs. SUPPLY VOLTAGE Supply Voltage VCC (V) Circuit Current ICC (mA) − 90 − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 0 + 10 − 90 − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 0 + 10 1st IF OUTPUT POWER vs. RF INPUT POWER RF Input Power PRFin (dBm) 1st IF OUTPUT POWER vs. RF INPUT POWER RF Input Power PRFin (dBm) 1st IF Output Power P1stIFout (dBm) 1st IF Output Power P1stIFout (dBm) + 10 − 10 − 20 − 30 − 40 − 50 − 60 − 70 + 10 − 10 − 20 − 30 − 40 − 50 − 60 − 70 fRFin = 1.575420 GHz f1stLOin = 1.63680 GHz P1stLOin = − 10 dBm f1stIFout = 61.38 MHz VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V TA = + 25 °C TA = + 85 °C TA = − 40 °C fRFin = 1.575420 GHz f1stLOin = 1.63680 GHz P1stLOin = − 10 dBm f1stIFout = 61.38 MHz No signals

Data Sheet P13860EJ3V0DS00 11 µµµµPB1005GS − 50 − 40 − 30 − 20 − 10 0 + 10 1st IF OUTPUT POWER vs. 1st LO INPUT POWER 1st LO Input Power P1stLOin (dBm) 1st IF Output Power P1stIFout (dBm) 0.1 0.3 1.0 2.0 RF CONVERSION GAIN vs. RF INPUT FREQUENCY RF Input Frequency fRFin (GHz) RF Conversion Gain CGRF (dB) 10 30 100 300 1 000 RF CONVERSION GAIN vs. 1st IF OUTPUT FREQUENCY 1st IF Output Frequency f1stIFout (MHz) RF Conversion Gain CGRF (dB) − 10 − 15 − 20 − 25 − 30 − 35 − 40 fRFin = 1.57542 MHz PRFin = − 40 dBm f1stLOin = 1636.8 MHz f1stIFout = 61.38 MHz VCC = 3.0 V VCC = 3.3 V VCC = 2.7 V PRFin = − 40 dBm P1stLOin = − 10 dBm f1stIFout = 61.38 MHz fLO = fRFin + f1stIFout VCC = 3.3 V VCC = 2.7 V VCC = 3.0 V VCC = 3.3 V VCC = 2.7 V VCC = 3.0 V fRFin = 1.57542 GHz PRFin = − 40 dBm P1stLOin = − 10 dBm fLOin = fRFin + fIFout Upper Local − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 0 + 10 3rd ORDER INTERMODULATON DISTORTION, 1st IF OUTPUT POWER OF EACH TONE vs. RF INPUT POWER OF EACH TONE RF Input Power of Each Tone PRFin (each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 1st IF Output Power of Each Tone P1stIFout (each) (dBm) + 20 + 10 − 10 − 20 − 30 − 40 − 50 − 60 − 70 − 80 − 90 P1stIFout (each) IM3 fRFin1 = 1 600 MHz fRFin2 = 1 605 MHz f1stLOin = 1 660 MHz P1stLOin = − 10 dBm Upper Local CIRCUIT CURRENT vs. SUPPLY VOLTAGE Supply Voltage VCC (V) Circuit Current ICC (mA) 01234 No signals

Data Sheet P13860EJ3V0DS0012 µµµµPB1005GS − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 0 2nd IF OUTPUT POWER vs. 1st IF INPUT POWER 1st IF Input Power P1stIFin (dBm) 2nd IF OUTPUT POWER vs. 1st IF INPUT POWER 1st IF Input Power P1stIFin (dBm) 2nd IF Output Power P2ndIFout (dBm) 2nd IF Output Power P2ndIFout (dBm) − 5 − 10 − 15 − 20 − 25 − 30 − 35 − 40 − 45 − 50 − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 0 − 5 − 10 − 15 − 20 − 25 − 30 − 35 − 40 − 45 − 50 f1stIFin = 61.38 MHz f2ndLOin = 65.472 MHz P2ndLOin = − 10 dBm f2ndFout = 4.092 MHz VGC = GND VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V TA = + 85°C TA = − 40°C TA = + 25°C f1stIFin = 61.38 MHz f2ndLOin = 65.472 MHz P2ndLOin = − 10 dBm f2ndFout = 4.092 MHz VGC = GND 10 30 50 70 100 10 30 50 70 100 13 5 7 1 0 13 5 7 1 0 IF CONVERSION GAIN vs. 1st IF INPUT FREQUENCY 1st IF Input Frequency f1stIFin (MHz) IF CONVERSION GAIN vs. 1st IF INPUT FREQUENCY 1st IF Input Frequency f1stIFin (dBm) IF Conversion Gain CGIF (dB) IF Conversion Gain CGIF (dB) IF CONVERSION GAIN vs. 2nd IF OUTPUT FREQUENCY 2nd IF Output Frequency f2ndIFout (MHz) IF CONVERSION GAIN vs. 2nd IF OUTPUT FREQUENCY 2nd IF Output Frequency f2ndIFout (MHz) IF Conversion Gain CGIF (dB) IF Conversion Gain CGIF (dB) VCC = 3.3 V VCC = 3.3 V VCC = 3.0 V VCC = 3.0 V VCC = 2.7 V VCC = 2.7 V TA = + 85°C TA = + 85°C TA = − 40°C TA = − 40°C TA = + 25°C TA = + 25°C P1stIFin = − 50 dBm P2ndLOin = − 10 dBm f2ndIFout = 4.092 MHz VGC = GND f1stIFin = 61.38 MHz P1stIFin = − 50 dBm P2ndLOin = − 10 dBm f2ndIFout = f1stIFin − f2ndLOin VGC = GND f1stIFin = 61.38 MHz P1stIFin = − 50 dBm P2ndLOin = − 10 dBm f2ndIFout = f1stIFin − f2ndLOin VGC = GND P1stIFin = − 50 dBm P2ndLOin = − 10 dBm f2ndIFout = 4.092 MHz VGC = GND

Data Sheet P13860EJ3V0DS00 13 µµµµPB1005GS IF CONVERSION GAIN vs. GAIN CONTROL VOLTAGE Gain Control Voltage VGC (V) IF CONVERSION GAIN vs. GAIN CONTROL VOLTAGE Gain Control Voltage VGC (V) IF Conversion Gain CGIF (dB) IF Conversion Gain CGIF (dB) − 10 − 20 − 30 − 10 − 20 − 30 VCC = 3.3 V VCC = 3.0 V VCC = 2.7 V TA = + 85°C TA = − 40°C TA = + 25°C f1stIFin = 61.38 MHz P1stIFin = − 50 dBm f2ndLOin = 65.472 MHz P2ndLOin = − 10 dBm f2ndIFout = 4.092 MHz f1stIFin = 61.38 MHz P1stIFin = − 50 dBm f2ndLOin = 65.472 MHz P2ndLOin = − 10 dBm f2ndIFout = 4.092 MHz 3rd ORDER INTERMODULATION DISTORTION, 2nd IF OUTPUT POWER OF EACH TONE vs. 2nd IF INPUT POWER OF EACH TONE 2nd IF Input Power of Each Tone P1stIFin (each) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 2nd IF Output Power of Each Tone P2ndIFout (each) (dBm) − 10 − 20 − 30 − 40 − 50 − 60 − 70 − 80 − 90 − 100 P2ndIFout (each) IM3 f1stIFin1 = 61.38 MHz f1stIFin2 = 61.48 MHz f2ndLOin = 65.472 MHz P2ndLOin = − 10 dBm VGC = GND CIRCUIT CURRENT vs. SUPPLY VOLTAGE Supply Voltage VCC (V) Circuit Current ICC (mA) No signals 01234

Data Sheet P13860EJ3V0DS0014 µµµµPB1005GS 0.1 1 10 100 0.1 1 10 100 VOLTAGE GAIN vs. INPUT FREQUENCY Input Frequency fin (MHz) VOLTAGE GAIN vs. INPUT FREQUENCY Input Frequency fin (MHz) Voltage Gain GV (dB) Voltage Gain GV (dB) VCC = 3.3 VVCC = 3.0 V VCC = 2.7 V P2ndIFin = − 60 dBm R L = 2 kΩ P2ndIFin = − 60 dBm R L = 2 kΩ TA = + 85°C TA = − 40°C TA = + 25°C − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 0 2nd IF OUTPUT POWER vs. 2nd IF INPUT POWER 2nd IF Input Power P2ndIFin (dBm) 2nd IF OUTPUT POWER vs. 2nd IF INPUT POWER 2nd IF Input Power P2ndIFin (dBm) 2nd IF Output Power P2ndIFout (dBm) 2nd IF Output Power P2ndIFout (dBm) + 10 − 10 − 20 − 30 − 40 − 50 + 10 − 10 − 20 − 30 − 40 − 50 − 80 − 70 − 60 − 50 − 40 − 30 − 20 − 10 0 VCC = 3.3 VVCC = 3.0 V VCC = 2.7 V f2ndIFin = 4.092 MHz R L = 2 kΩ f2ndIFin = 4.092 MHz R L = 2 kΩ TA = + 85°C TA = − 40°C TA = + 25°C CIRCUIT CURRENT vs. SUPPLY VOLTAGE Supply Voltage VCC (V) Circuit Current ICC (mA) No signals 0 01234

Data Sheet P13860EJ3V0DS00 15 µµµµPB1005GS 1 10 100 1 10 100 REFERENCE OUTPUT SWING vs. REFERENCE INPUT FREQUENCY REFERENCE OUTPUT SWING vs. REFERENCE INPUT FREQUENCY REFERENCE OUTPUT SWING vs. REFERENCE INPUT POWER REFERENCE OUTPUT SWING vs. REFERENCE INPUT POWER Reference Input Frequency fREFin (MHz) Reference Input Frequency fREFin (MHz) Reference Output Swing VREFout (VP-P) Reference Output Swing VREFout (VP-P)2.0 1.5 1.0 0.5 2.0 1.5 1.0 0.5 PREFin = 1.0VP-P PREFin = 1.0VP-P VCC = 3.3 VVCC = 3.0 V VCC = 2.7 V TA = + 85°C TA = − 40°CTA = + 25°C − 50 − 40 − 30 − 20 − 10 0 + 10 − 50 − 40 − 30 − 20 − 10 0 + 10 Reference Input Power PREFin (dBm) Reference Input Power PREFin (dBm) Reference Output Swing VREFout (VP-P) Reference Output Swing VREFout (VP-P)2.0 1.5 1.0 0.5 2.0 1.5 1.0 0.5 fREFin = 16.368 MHz fREFin = 16.368 MHz VCC = 3.3 VVCC = 3.0 V VCC = 2.7 V TA = + 85°C TA = − 40°C TA = + 25°C Remark The graphs indicate nominal characteristics.

Data Sheet P13860EJ3V0DS0016 µµµµPB1005GS TEST CIRCUIT Signal Generator 50Ω 50Ω Spectrum Analyzer Signal Generator 1PIN 4VCC V CC C8 C10 C6V-Di C5VCC PD ÷2 ÷25 C23 V CC C22 C21 C20 Spectrum Analyzer To get maximum gain, apply 1.0V MAX. 50Ω Signal Generator C19 C18 C17 C11 VCC C12 C13 C14 VCC C15 C16 Spectrum Analyzer VCC Spectrum Analyzer or Oscilloscope 50Ω Signal Generator Spectrum Analyzer or Oscilloscope Spectrum Analyzer: measure frequency Oscilloscope : measure output voltage swing 50Ω Component List Form Symbol Value C1 to C5, C8, C11 to C15, C17, C18, C22 1 000 pF C6, C7 24 pF (UJ) C9 1 800 pF C10 33 nF C19 10 000 pF Chip capacitor C23 1 µF C16, C20 0.1 µFCeramic capacitor C21 0.01 µF R1, R2 4.7 k Ω R3 6.2 k Ω R4 1.2 k Ω Chip resistor R5, R6 1.95 k Ω Varactor Diode V −Di HVU12 Chip inductor L 2.7 nH

Data Sheet P13860EJ3V0DS00 17 µµµµPB1005GS PACKAGE DIMENSIONS NOTE Each lead centerline is located within 0.10 mm of its true position (T.P.) at maximum material condition.

30 PIN PLASTIC SHRINK SOP (300 mil) (UNIT: mm)

6.1 – 0.2 0.10 M0.3 – 0.1 0.65 0.10 detail of lead end 0.51 MAX. 8.1 – 0.2 0.5 – 0.2 1.0 – 0.2 9.85 – 0.26 11 5 3˚+7˚ –3˚ 0.15+0.10 –0.05 2.0 MAX. 1.7 – 0.1 0.125 – 0.075

Data Sheet P13860EJ3V0DS0018 µµµµPB1005GS NOTE ON CORRECT USE (1) Observe precautions for handling because of electro-static sensitive devices. (2) Form a ground pattern as wide as possible to minimize ground impedance (to prevent abnormal oscillation). (3) Keep the track length of the ground pins as short as possible. (4) Connect a bypass capacitor (example: 1 000 pF) to the V CC pin. (5) Frequency signal input/output pins must be each coupled with capacitor for DC cut. RECOMMENDED SOLDERING CONDITIONS This product should be soldered under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your NEC sales representative. Soldering Method Soldering Conditions Recommended Condition Symbol Infrared Reflow Package peak temperature: 235°C or below Time: 30 seconds or less (at 210°C) Count: 3, Exposure limit: None Note IR35-00-3 Time: 40 seconds or less (at 200°C) Count: 3, Exposure limit: None Note VP15-00-3 Wave Soldering Soldering bath temperature: 260°C or below Time: 10 seconds or less Count: 1, Exposure limit: None Note WS60-00-1 Partial Heating Pin temperature: 300°C Time: 3 seconds or less (per side of device) Exposure limit: None Note Note After opening the dry pack, keep it in a place below 25°C and 65% RH for the allowable storage period. Caution Do not use different soldering methods together (except for partial heating). For details of recommended soldering conditions for surface mounting, refer to information document SEMICONDUCTOR DEVICE MOUNTING TECHNOLOGY MANUAL (C10535E).

Data Sheet P13860EJ3V0DS00 19 µµµµPB1005GS [MEMO]

µµµµPB1005GS ATTENTION OBSERVE PRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES NESAT (NEC Silicon Advanced Technology) is a trademark of NEC Corporation.

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• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8