UPA901TU NEC | Alldatasheet

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Technical content

UPA901TUNEC's NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD California Eastern Laboratories

  • OUTPUT POWER: Pout = 19 dBm @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz
  • LOW POWER: IC = 90 mA @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz
  • SINGLE POWER SUPPLY OPERATION: VCE = 3.6 V
  • BUILT-IN BIAS CIRCUIT
  • 8-PIN LEAD-LESS MINIMOLD:

FEATURES

ORDERING INFORMATION

Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. NEC's UPA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain, low power consumption. NEC's UPA901TU is packaged in surface mount 8-pin lead- less minimold plastic package. This device is fabricated with our SiGe HBT process UHS2- HV technology.

DESCRIPTION

  • 5.8 GHz Cordless Phones
  • 5.8 GHz Band DSRC (Dedicated Short Range Communication) System
  • 5 GHz Band Video Transmitter

APPLICATIONS

PART NUMBER ORDER NUMBER QUANTITY PACKAGE MARKING SUPPLYING FORM UPA901TU UPA901TU-A 50 pcs (Non reel) 8-pin lead-less minimold( Pb-Free) A901 • 8 mm wide embossed taping

  • Pin 1, Pin 8 face the perforation side of the tapeUPA901TU-T3 UPA901TU-T3-A 5 kpcs/reel

PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS (TA =+25ºC) RECOMMENDED OPERATING RANGE (All Parameters) (Top View) 5 6 7 8 4 3 2 1 (N.C.)(B1) (E) (C2) Bias Circuit (B2)(C1) (E) (Bias) PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 4.5 V Emitter to Base Voltage VEBO 2 V Collector Current of Q1 IC1 75 mA Collector Current of Q2 IC2 250 mA Bias Current IBIAS 25 mA Total Power Dissipation Ptot Note 410 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Operating Ambient Temperature TA −40 to +85 °C Note Mounted on 20 × 20 × 0.8 mm (t) glass epoxy PCB (FR-4) PARAMETER SYMBOL MIN. TYP. MAX. UNIT Collector to Emitter Voltage VCE − 3.6 4.5 V Total Current Itotal − 90 300 mA Input Power Pin − −3 +5 dBm THERMAL RESISTANCE (TA =+25ºC) PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT Channel to Ambient Resistance Rth (j-a1) Note 150 °C/W Rth (j-a2) Free Air TBD °C/W Note Mounted on 20 × 20 × 0.8 mm (t) glass epoxy PCB (FR-4)

ELECTRICAL CHARACTERISTICS (TA = +25°C) -DC CHARACTERISTICS- (1) Q1 PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 60 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 120 nA DC Current Gain hFE Note VCE = 3 V, IC = 6 mA 80 120 160 − Current Ratio (IC (set) 1/IBIAS) CR1 VCE = 3.6 V, VBE = VBIAS = 0.865 V 2 4.5 9 − (2) Q2 PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA − − 200 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA − − 400 nA DC Current Gain hFE Note VCE = 3 V, IC = 20 mA 80 120 160 − Current Ratio (IC (set) 2/IBIAS) CR2 VCE = 3.6 V, VBE = VBIAS = 0.865 V 8 10 13 − (3) Bias Circuit PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Bias Circuit Current IBIAS VBIAS = 0.865 V − 4 − mA Note Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% IBIAS, IC (set) 1, IC (set) 2 MEASUREMENT CIRCUIT (N.C.)(B1) (E) (C2) Bias Circuit (B2)(C1) (E) (Bias) VBIAS IBIAS 1234 8765 (N.C.)(B1) (E) (C2) Bias Circuit (B2)(C1) (E) (Bias) VCE IC (set) 1 1234 8765 VBE (N.C.)(B1) (E) (C2) Bias Circuit (B2)(C1) (E) (Bias) IC (set) 2 1234 8765 VBE VCE IBIAS IC (set) 1 IC (set) 2 IC (set) 1 = CR1× IBIAS = 4.5 × IBIAS (TYP.) IC (set) 2 = CR2 × IBIAS = 4.5 × IBIAS (TYP.) The application circuits and their parameters are for reference only and are not intended for actual design-ins.

ELECTRICAL CHARACTERISTICS (TA = +25°C) -RF CHARACTERISTICS- (1) Q1 PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Maximum Available Power Gain (Q1) MAG1 VCE = 3.6 V, IC = 12 mA, f = 5.8 GHz 13.5 15.0 − dB Output Power (Q1) Pout1 VCE = 3.6 V, IC (set) = 12 mA, f = 5.8 GHz, Pin = −3 dBm 10.2 11.2 − dBm Collector Current (Q1) ICC1 VCE = 3.6 V, IC (set) = 12 mA, f = 5.8 GHz, Pin = −3 dBm − 20 − mA (2) Q2 PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Insertion Power Gain (Q2) | S21e |2 VCE = 3.6 V, IC = 40 mA, f = 5.8 GHz 2 3.5 5 dB Output Power (Q2) Pout2 VCE = 3.6 V, IC (set) = 40 mA, f = 5.8 GHz, Pin = 11 dBm 17.5 19.0 − dBm Collector Current (Q2) ICC2 VCE = 3.6 V, IC (set) = 40 mA, f = 5.8 GHz, Pin = 11 dBm − 70 − mA (3) Q1 + Q2, 2 stage Amplifiers PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Output Power (Q1 + Q2) Pout VCE = 3.6 V, RBIAS = 680 Ω, f = 5.8 GHz, Pin = −3 dBm Note 17.5 19.0 − dBm Total Current (Q1 + Q2) Itotal VCE = 3.6 V, RBIAS = 680 Ω, f = 5.8 GHz, Pin = −3 dBm Note − 90 − mA Note by MEASUREMENT CIRCUIT 1

(N.C.)(B1) (E) (C2) Bias Circuit (B2)(C1) (E) (Bias) 1234 8765 100 nH L1 RFin 10 Ω 1.0 pF C9 0.75 pF 0.5 pF 0.5 pF C3 1.0 pF 5.6 nH L2 RFout 10 Ω 10 nF1.0 pF C6 C10 VCE Itotal 10 Ω 10 nF 12 nH L45.6 nH L3 0.75 pF 10 Ω 1.0 pF 1.0 pF C5 C8 C7 680 Ω IC2, IC (set) 2 IBIAS IC1, IC (set) 1 IC (set) 1 = CR1 × IBIAS = 4.5 × IBIAS (TYP.) IC (set) 2 = CR2 × IBIAS = 4.5 × IBIAS (TYP.) The application circuits and their parameters are for reference only and are not intended for actual design-ins.

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD C1 C2 C3 C4 C10C9 R3 C6 L1 L2 C11 VCC GND R : 1005 Chip resistor L : 1005 Chip inductor C : 1005 Chip cunductor RFin RFout A901 The dotted line are connected with the back of substrate Remarks 1. Substrate : 20 × 20 × 0.8 (t) mm FR-4 (4 Layer, each thickness 0.2 mm), copper thickness 18 µm, gold flash plating 2. Back side : GND pattern 3. o : Through hole USING THE NEC EVALUATION BOARD SYMBOL VALUES SYMBOL VALUES R1 680 Ω C2 0.5 pF R2 10 Ω C3 0.5 pF R3 10 Ω C4 1.0 pF R4 10 Ω C5 0.75 pF R5 10 Ω C6 1.0 pF L1 100 nH C7 1.0 pF L2 5.6 nH C8 1.0 pF L3 5.6 nH C9 1.0 pF L4 12 nH C10 10 nF C1 0.75 pF C11 10 nF

TYPICAL CHARACTERISTICS (TA = +25°C , VCE = 3.6 V, RBIAS = 680 Ω, f = 5.8 GHz, unless otherwise specified) Output Power Pout (dBm) Input Power Pin (dBm) 5-15 -5 5-10 0 200 150 100 Itotal Pout totalη VCE x Itotal totalη = x 100 (%)Pout Output Power Pout (dBm) Input Power Pin (dBm) -10 -2 Total Current Itotal (mA) -8 6 280 240 200 160 120 -6 -4 0 2 4 VCE = 4.2 V 3.8 V3.6 V3.3 V 2.8 V Itotal Pout -10 -2-8 6 280 240 200 160 120 -6 -4 0 2 4 f = 5.725 GHz

5.800 GHz

5.850 GHz

Bias Circuit Current IBIAS (mA) Collector to Emitter Voltage VCE (V) 00 41 2 3 5 RBIAS = 300 Ω 680 Ω 1000 Ω 2000 Ω OUTPUT POWER, TOTAL CURRENT, TOTAL POWER EFFICIENCY vs. INPUT POWERTotal Current Itotal (mA) Total Power Efficiency total (%) η OUTPUT POWER, TOTAL CURRENT, vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) Total Current Itotal (mA) OUTPUT POWER, TOTAL CURRENT, vs. INPUT POWER BIAS CIRCUIT CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Remark The graphs indicate nominal characteristics.

These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale. A Business Partner of NEC Compound Semiconductor Devices, Ltd. 02/15/2005 UPA901TU PACKAGE DIMENSIONS 8-PIN LEAD-LESS MINIMOLD (UNIT:mm) 1 2 3 4 8 7 6 5 2.2±0.05 2.0±0.1 (Top View) 0.5±0.03 4 3 2 1 5 6 7 8 (0.75)(0.75) (0.25) (0.25) 0.16±0.05 (Bottom View) A901 2.0±0.1 (0.35)(0.35) (0.35)(0.35) (0.5)(0.5) (0.6)(0.6) (0.65)(0.65) (0.6) (0.3) 0.125+0.1 -0.05 Remark ( ) : Reference value

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