UPA901TU RENESAS | Alldatasheet
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.
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DESCRIPTION
The µPA901TU is a silicon germanium HBT IC designed for the power amplifier of 5.8 GHz cordless phone and other 5.8 GHz applications. This IC consists of two stage amplifiers and has excellent performance, high efficiency, high gain, low power consumption. The device is packaged in surface mount 8-pin lead-less minimold plastic package. The device is fabricated with our SiGe HBT process UHS2-HV technology.
FEATURES
- Output Power : Pout = 19 dBm @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz Low Power : I C = 90 mA @ Pin = −3 dBm, VCE = 3.6 V, f = 5.8 GHz Single Power Supply Operation : VCE = 3.6 V Built-in bias circuit 8-pin lead-less minimold (2.0 × 2.2 × 0.5 mm)
APPLICATIONS
5.8 GHz cordless phone 5.8 GHz band DSRC (Dedicated Short Range Communication) system 5.8 GHz video transmitter
ORDERING INFORMATION
Part Number Order Number Quantity Package Marking Supplying Form µPA901TU µPA901TU-A 50 pcs (Non reel) 8-pin lead-less A901 8 mm wide embossed taping µPA901TU-T3 µPA901TU-T3-A 5 kpcs/reel minimold (Pb-Free) Pi n 1, Pin 8 face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. NEC Compound Semiconductor Devices, Ltd. 2004 DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. NPN SiGe RF IC IN A 8-PIN LEAD-LESS MINIMOLD Document No. PU10538EJ01V0DS (1st edition) Date Published October 2004 CP(K) Printed in Japan NPN SiGe RF ANALOG INTEGRATED CIRCUIT µPA901TU NEC Compound Semiconductor Devices, Ltd. 2004
PIN CONNECTIONS AND INTERNAL BLOCK DIAGRAM (Top View) 5678 4321 (N.C.)(B1) (E) (C2) Bias Circuit (B2)(C1) (E) (Bias) ABSOLUTE MAXIMUM RATINGS (T A = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 4.5 V Emitter to Base Voltage VEBO 2 V Collector Current of Q1 IC1 75 mA Collector Current of Q2 IC2 250 mA Bias Current IBIAS 25 mA Total Power Dissipation Ptot Note 410 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Operating Ambient Temperature T A −40 to +85 °C Note Mounted on 20 × 20 × 0.8 mm (t) glass epoxy PCB (FR-4) THERMAL RESISTANCE (T A = +25°C) Parameter Symbol Test Conditions Ratings Unit Channel to Ambient Resistance R th (j-a1) Note 150 °C/W R th (j-a2) Free Air TBD °C/W Note Mounted on 20 × 20 × 0.8 mm (t) glass epoxy PCB (FR-4) RECOMMENDED OPERATING RANGE (All Parameter) Parameter Symbol MIN. TYP. MAX. Unit Collector to Emitter Voltage VCE − 3.6 4.5 V Total Current Itotal − 90 300 mA Input Power Pin − −3 +5 dBm Data Sheet PU10538EJ01V0DS 2 µPA901TU
ELECTRICAL CHARACTERISTICS (T A = +25°C) −DC CHARACTERISTICS − (1) Q1 Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cut-off Current ICBO V CB = 5 V, IE = 0 mA − − 60 nA Emitter Cut-off Current IEBO V EB = 1 V, IC = 0 mA − − 120 nA DC Current Gain hFE Note V CE = 3 V, IC = 6 mA 80 120 160 − Current Ratio (IC (set) 1/IBIAS) CR1 VCE = 3.6 V, VBE = VBIAS = 0.865 V 2 4.5 9 − (2) Q2 Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Collector Cut-off Current ICBO V CB = 5 V, IE = 0 mA − − 200 nA Emitter Cut-off Current IEBO V EB = 1 V, IC = 0 mA − − 400 nA DC Current Gain hFE Note V CE = 3 V, IC = 20 mA 80 120 160 − Current Ratio (IC (set) 2/IBIAS) CR2 VCE = 3.6 V, VBE = VBIAS = 0.865 V 8 10 13 − (3) Bias Circuit Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Bias Circuit Current IBIAS V BIAS = 0.865 V − 4 − mA Note Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% IBIAS , IC (set) 1, IC (set) 2 MEASUREMENT CIRCUIT (N.C.)(B1) (E) (C2) Bias Circuit (B2)(C1) (E) (Bias) VBIAS IBIAS 123 4 8765 (N.C.)(B1) (E) (C2) Bias Circuit (B2)(C1) (E) (Bias) VCE IC (set) 1 123 4 8765 VBE (N.C.)(B1) (E) (C2) Bias Circuit (B2)(C1) (E) (Bias) IC (set) 2 1234 8765 VBE VCE IBIAS IC (set) 1 IC (set) 2 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. IC (set) 1 = CR1 × IBIAS = 4.5 × IBIAS (TYP.) IC (set) 2 = CR2 × IBIAS = 4.5 × IBIAS (TYP.) Data Sheet PU10538EJ01V0DS 3 µPA901TU
ELECTRICAL CHARACTERISTICS (T A = +25°C) −RF CHARACTERISTICS − (1) Q1 Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Power Gain (Q1) S21e Maximum Available Power Gain (Q1) MAG1 V CE = 3.6 V, IC = 12 mA, f = 5.8 GHz 13.5 15.0 − dB Output Power (Q1) Pout1 V CE = 3.6 V, IC (set) = 12 mA, f = 5.8 GHz, Pin = −3 dBm 10.2 11.2 − dBm Collector Current (Q1) ICC 1 V CE = 3.6 V, IC (set) = 12 mA, f = 5.8 GHz, Pin = −3 dBm − 20 − mA (2) Q2 Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Insertion Power Gain (Q2) S21e V CE = 3.6 V, IC = 40 mA, f = 5.8 GHz 2 3.5 5 dB Output Power (Q2) Pout2 V CE = 3.6 V, IC (set) = 40 mA, f = 5.8 GHz, Pin = 11 dBm 17.5 19.0 − dBm Collector Current (Q2) ICC 2 V CE = 3.6 V, IC (set) = 40 mA, f = 5.8 GHz, Pin = 11 dBm − 70 − mA (3) Q1 + Q2, 2 stage Amplifiers Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Output Power Pout V CE = 3.6 V, RBIAS = 680 Ω , f = 5.8 GHz, Pin = −3 dBm Note 17.5 19.0 − mA Total Current Itotal V CE = 3.6 V, RBIAS = 680 Ω , f = 5.8 GHz, Pin = −3 dBm Note − 90 − mA Note by MEASUREMENT CIRCUIT 1 Data Sheet PU10538EJ01V0DS 4 µPA901TU
(N.C.)(B1) (E) (C2) Bias Circuit (B2)(C1) (E) (Bias) 123 4 8765 100 nH L1 RF in 10 Ω 1.0 pF C9 0.75 pF 0.5 pF 0.5 pF C3 1.0 pF 5.6 nH L2 RF out 10 Ω 10 nF1.0 pF C6 C10 VCE Itotal 10 Ω10 nF 12 nH L45.6 nH L3 0.75 pF 10 Ω 1.0 pF 1.0 pF C5 C8 C7 680 Ω IC2 , IC (set) 2 IBIAS IC1 , IC (set) 1 The application circuits and their parameters are for reference only and are not intended for use in actual design-ins. IC (set) 1 = CR1 × IBIAS = 4.5 × IBIAS (TYP.) IC (set) 2 = CR2 × IBIAS = 4.5 × IBIAS (TYP.) Data Sheet PU10538EJ01V0DS 5 µPA901TU
ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD C1 C2 C3 C4 C10C9 R3 C6 L1 L2 C11 VCC GND R : 1005 Chip resistor L : 1005 Chip inductor C : 1005 Chip cunductor RF in RF out A901 The dotted line are connected with the back of substrate Remarks 1. Substrate : 20 × 20 × 0.8 (t) mm FR-4 (4 Layer, each thickness 0.2 mm), copper thickness 18 µm, gold flash plating 2. Back side : GND pattern 3. : Through hole USING THE NEC EVALUATION BOARD Symbol Values Symbol Values R1 680 Ω C2 0.5 pF R2 10 Ω C3 0.5 pF R3 10 Ω C4 1.0 pF R4 10 Ω C5 0.75 pF R5 10 Ω C6 1.0 pF L1 100 nH C7 1.0 pF L2 5.6 nH C8 1.0 pF L3 5.6 nH C9 1.0 pF L4 12 nH C10 10 nF C1 0.75 pF C11 10 nF Data Sheet PU10538EJ01V0DS 6 µPA901TU
(TA = +25°C , VCE = 3.6 V, RBIAS = 680 Ω , f = 5.8 GHz, unless otherwise specified) Output Power Pout (dBm) Input Power Pin (dBm) 5–15 –5 5 –10 0 200 150 100 I total Pout totalη VCE × Itotal totalη = × 100 (%)Pout Output Power Pout (dBm) Input Power Pin (dBm) –10 –2 Total Current Itotal (mA) –8 6 280 240 200 160 120 –6 –4 0 2 4 VCE = 4.2 V 3.8 V3.6 V 3.3 V 2.8 V4.2 V3.8 V 3.6 V 3.3 V 2.8 V Itotal Pout –10 –2 –8 6 280 240 200 160 120 –6 –4 0 2 4 f = 5.725 GHz
5.800 GHz
5.850 GHz
Bias Circuit Current IBIAS (mA) Collector to Emitter Voltage VCE (V) 41 2 3 5 R BIAS = 300 Ω 680 Ω 1 000 Ω 2 000 Ω OUTPUT POWER, TOTAL CURRENT, TOTAL POWER EFFICIENCY vs. INPUT POWER Total Current Itotal (mA) Total Power Efficiency total (%) η OUTPUT POWER, TOTAL CURRENT, vs. INPUT POWER Output Power Pout (dBm) Input Power Pin (dBm) Total Current Itotal (mA) OUTPUT POWER, TOTAL CURRENT, vs. INPUT POWER BIAS CIRCUIT CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Remark The graphs indicate nominal characteristics. Data Sheet PU10538EJ01V0DS 7 µPA901TU
8-PIN LEAD-LESS MINIMOLD (UNIT: mm) 123 4 8 76 5 2.2±0.05 2.0±0.1 (Top View) 0.5±0.03 4 3 2 1 56 78 (0.75)(0.75) (0.25)(0.25) 0.16±0.05 (Bottom View) A901 2.0±0.1 (0.35)(0.35) (0.35) (0.35) (0.5)(0.5) (0.6)(0.6) (0.65)(0.65) (0.6) (0.3) 0.125+0.1 –0.05 Remark ( ) : Reference value Data Sheet PU10538EJ01V0DS 8 µPA901TU
M8E 00. 4 - 0110 The information in this document is current as of October, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific":Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation, NEC Compound Semiconductor Devices, Ltd. and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). Data Sheet PU10538EJ01V0DS 9 µPA901TU
NEC Compound Semiconductor Devices Hong Kong Limited E-mail: ncsd-hk@elhk.nec.com.hk (sales, technical and general) Hong Kong Head Office Taipei Branch Office Korea Branch Office TEL: +852-3107-7303 TEL: +886-2-8712-0478 FAX: +852-3107-7309 FAX: +886-2-2545-3859 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-0 FAX: +49-211-6503-1327 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 0406 NEC Compound Semiconductor Devices, Ltd. http://www.ncsd.necel.com/ E-mail: salesinfo@ml.ncsd.necel.com (sales and general) techinfo@ml.ncsd.necel.com (technical) Sales Division TEL: +81-44-435-1588 FAX: +81-44-435-1579 For further information, please contact µPA901TU