UPA835TF-T1

UPA835TF NEC | Alldatasheet

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Technical content

UPA835TFNPN SILICON EPITAXIAL TWIN TRANSISTOR

• LOW NOISE: Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
• HIGH GAIN: Q1: |S21E|2 = 8.5 dB TYP at f = 1 GHz, VCE = 3 V, lc = 10 mA Q2: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS (Q1: NE685, Q2: NE856)

FEATURES

DESCRIPTION

The UPA835TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs. PRELIMINARY DATA SHEET California Eastern Laboratories OUTLINE DIMENSIONS (Units in mm) PART NUMBER UPA835TF PACKAGE OUTLINE TS06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 hFE DC Current Gain1 at VCE = 3 V, IC = 10 mA 75 150 fT Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz GHz 12 Cre Feedback Capacitance 2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.4 0.7 |S21E|2 Insertion Power Gain at VCE = 3 V, IC =10 mA, f = 2 GHz dB 7 8.5 NF Noise Figure at V CE = 3 V, IC = 3 mA, f = 2 GHz dB 1.5 2.5 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 1.0 hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA 100 145 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 3.0 4.5 Cre Feedback Capacitance 2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.7 1.5 |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 7 9 NF Noise Figure at V CE = 3 V, IC = 7 mA, f = 1 GHz dB 1.2 2.5 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. Q1Q2 2.1 – 0.1 1.25 – 0.1 0 ~ 0.1 0.13 – 0.05 0.6 – 0.1 2.0 – 0.2 0.65 1.3 3 4 0.22 (All Leads) +0.10 - 0.05 0.45 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.

ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS Q1 Q2 VCBO Collector to Base Voltage V VCEO Collector to Emitter Voltage V VEBO Emitter to Base Voltage V IC Collector Current mA PT Total Power Dissipation mW TJ Junction Temperature °C TSTG Storage Temperature °C Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. When operating both devices, the power dissipation for either device should not exceed 110 mW. UPA835TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Ambient Temperature, TA (°C) 2002 COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Collector Current, lc (mA) Base to Emitter Voltage, VBE (V) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Collector Current, lc (mA) Base to Emitter Voltage, VBE (V) Q1 Q2 150 150 -65 to +150 200 100 0 50 100 150 Free Air 2 elements in total Q1 when using 1 element Q1 when using 2 elements 200 100 0 8 100 150 Free Air 2 elements in total Q2 when using 1 element Q2 when using 2 elements 0 0.5 1.0 VCE = 3 V 0 0.5 1.0 VCE = 3 V

TYPICAL PERFORMANCE CURVES (TA = 25˚C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current, lc (mA) Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain, hFE Collector Current, lc (mA) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current, lc (mA) Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain, hFE Collector Current, lc (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product fT (GHz) Collector Current, lc (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product fT (GHz) Collector Current, lc (mA) Q1 Q2 01 2 3 4 5 6 500 µA 400 µA 300 µA 200 µA lB=100 µA 05 1 0 lB=160 µA 140 µA 120 µA 100 µA 80 µA 60 µA 40 µA 20 µA 200 100 12 51 0 2 0 5 00.1 0.2 0.5 100 5 V VCE = 3 V 200 100 511 0 5 00.5 VCE = 3 V 12 5 1 0 2 0 5 00.5 5 V 3 V f = 2 GHz VCE = 1 V 1 5 10 500.5 VCE = 3 V f = 1.0 GHz

TYPICAL PERFORMANCE CURVES (TA = 25˚C) UPA835TF NOISE FIGURE vs. COLLECTOR CURRENT Noise Figure, NF (dB) Collector Current, lc (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Feedback Capacitance, Cre (pF) Collector to Base Voltage, VCB (V) NOISE FIGURE vs. COLLECTOR CURRENT Noise Figure, NF (dB) Collector Current, lc (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Feedback Capacitance, Cre (pF) Collector to Base Voltage, VCB (V) Insertion Power Gain, |S21E|2 (dB) INSERTION POWER GAIN vs. COLLECTOR CURRENT Insertion Power Gain, |S21E|2 (dB) Collector Current, lc (mA) Collector Current, lc (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT Q1 Q2 2 5 10 20 500.5 f = 2 GHz 5 V 3 V VCE = 1 V 1 5 10 50 1000.5 VCE = 3 V f = 1.0 GHz 12 5 1 0 2 0 5 00.5 VCE = 3 V f = 2 GHz 1.0 5.0 10 50 1000.5 VCE = 3 V f = 1 GHz 0.6 0.5 0.4 0.3 0.2 12 5 1 0 2 00.5 f = 1 MHz 5.0 2.0 1.0 0.5 0.2 0.1 2 5 10 20 501 f = 1 MHz

TYPICAL PERFORMANCE CURVES (TA = 25˚C) Frequency, f (GHz) Insertion Power Gain, |S21E|2 (dB) INSERTION POWER GAIN vs. FREQUENCY FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 1 mA, Z0 = 50 Ω TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 1 mA, Z0 = 50 Ω VCE = 3 V lc = 7 mA

TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 3 mA, Z0 = 50 Ω VCE = 3 V, IC = 3 mA, Z0 = 50 Ω

TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 5 mA, Z0 = 50 Ω VCE = 3 V, IC = 5 mA, Z0 = 50 Ω FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG

VCE = 3 V, IC = 10 mA, Z0 = 50 Ω TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 7 mA, Z0 = 50 Ω BUILT-IN TRANSISTORS Q1 Q2 3-pin small mini mold part No. NE68530 NE85630 The UPA832TF features the Q1 and Q2 in inverted positions. PART NUMBER QUANTITY PACKAGING UPA835TF-T1 3000 Tape & Reel

ORDERING INFORMATION

Frequency: 0.1 to 3.0 GHz Bias: V CE =0.5 V to 5 V, IC = 1 mA to 10 mA Date: 11/98 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. UNITS Parameter Units time seconds capacitance farads inductance henries resistance ohms voltage volts current amps (1) Gummel-Poon Model Parameters Q1 Q2 Parameters Q1 Q2 IS 7e-16 6e-16 MJC 0.34 0.55 BF 109 120 XCJC 0 0.3 NF 1 0.98 CJS 0 0 VAF 15 10 VJS 0.75 0.75 IKF 0.19 0.08 MJS 0 0 ISE 7.9e-13 32e-16 FC 0.5 0.5 NE 2.19 1.93 TF 2.5e-12 12e-12 BR 1 12 XTF 5.2 6 NR 1.08 0.991 VTF 4.58 10 VAR 12.4 3.9 ITF 0.01 0.2 IKR Infinity 0.17 PTF 0 0 ISC 0 0 TR 1e-9 1e-9 NC 2 2 EG 1.11 1.11 RE 1.3 0.38 XTB 0 0 RB 10 4.16 XTI 3 3 RBM 8.34 3.6 KF 0 0 IRB 0.009 1.96e-4 AF 1 1 RC 10 2 CJE 0.4e-12 2.8e-12 VJE 0.81 1.3 MJE 0.5 0.5 CJC 0.18e-12 1.1e-12 VJC 0.75 0.7 BJT NONLINEAR MODEL PARAMETERS (1)

Frequency: 0.1 to 3.0 GHz Bias: V CE = 0.5 V to 5 V, IC = 1 mA to 10 mA Date: 11/98 BUILT-IN TRANSISTORS Q1 Q2 3-pin small mini mold part No. NE68530 NE85630 The UPA832TF features the Q1 and Q2 in inverted positions. PART NUMBER QUANTITY PACKAGING UPA835TF-T1 3000 Tape & Reel Pin_1 Pin_2 Pin_3 Pin_4 Pin_5 Pin_6 0.07 pF CCEPKG2 CCBPKG2 0.85 nH 0.09 pF CCB2 0.11 pF CCE1 0.14 pF 0.7 nH 0.45 nH 0.05 nH 0.1 nH CCBPKG1 CCB1 LE1 LB1 LB 0.05 nH LE 0.05 nH LB C_B2E2 0.05 pF C_B1B2 0.05 pF LE2 LB2 C_C1B2 0.1 pF LC 0.05 nH LC 0.05 nH LE 0.05 nH C_E1C2 C_C1E1 0.05 pF 0.05 pF C_E1B2 0.3 pF 0.1 pF 0.07 pF CCE2 0.16 pF SCHEMATIC EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -2/99DATA SUBJECT TO CHANGE WITHOUT NOTICE