UPA834TF_99 NEC | Alldatasheet
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Technical content
UPA834TFNPN SILICON EPITAXIAL TWIN TRANSISTOR
- LOW NOISE: Q1:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
- HIGH GAIN: Q1: |S21E|2 = 12.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
- 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
- 2 DIFFERENT BUILT-IN TRANSISTORS (Q1: NE681, Q2: NE856)
FEATURES
DESCRIPTION
The UPA834TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs. PRELIMINARY DATA SHEET California Eastern Laboratories OUTLINE DIMENSIONS (Units in mm) PART NUMBER UPA834TF PACKAGE OUTLINE TS06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 0.8 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.8 hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA 70 150 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 4.5 7.0 Cre Feedback Capacitance 2 at VCB = 3 V, lE = 0, f = 1 MHz pF 0.45 0.9 |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 10 12 NF Noise Figure at V CE = 3 V, IC = 7 mA, f = 1 GHz dB 1.4 2.7 ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 1.0 hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA 100 145 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 3.0 4.5 Cre Feedback Capacitance 2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.7 1.5 |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 7 9 NF Noise Figure at V CE = 3 V, IC = 7 mA, f = 1 GHz dB 1.2 2.5 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. Q1Q2 2.1 – 0.1 1.25 – 0.1 0 ~ 0.1 0.13 – 0.05 0.6 – 0.1 2.0 – 0.2 0.65 1.3 3 4 0.22 (All Leads) +0.10 - 0.05 0.45 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.
SYMBOLS PARAMETERS UNITS RATINGS Q1 Q2 VCBO Collector to Base Voltage V VCEO Collector to Emitter Voltage V VEBO Emitter to Base Voltage V IC Collector Current mA PT Total Power Dissipation mW TJ Junction Temperature °C TSTG Storage Temperature °C 20 20 10 12 1.5 3 65 100 150 150 ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C) Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. When operating both devices, the power dissipation for either device should not exceed 110 mW. UPA834TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Ambient Temperature, TA (°C) 2002 150 150 -65 to +150 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current, lc (mA) Collector to Emitter Voltage, VCE (V) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current, lc (mA) Collector to Emitter Voltage, VCE (V) Q1 Q2 200 100 0 50 100 150 Free Air Q1+ Q2 total Q1 when using 1 element Q1 when using 2 elements 200 100 0 50 100 150 Free Air Q1 + Q2 total Q2 when using 1 element Q2 when using 2 elements 0 0.5 1.0 160 µA 140 µA 120 µA 100 µA 80 µA 60 µA 40 µA lB=20 µA 05 1 0 lB=160 µA 140 µA 120 µA 100 µA 80 µA 60 µA 40 µA 20 µA
TYPICAL PERFORMANCE CURVES (TA = 25˚C) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Collector Current, lc (mA) Base to Emitter Voltage, VBE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain, hFE Collector Current, lc (mA) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Collector Current, lc (mA) Base to Emitter Voltage, VBE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain, hFE Collector Current, lc (mA) Q1 Q2 Feedback Capacitance, Cre (pF) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Feedback Capacitance, Cre (pF) Collector to Base Voltage, VCB (V) Collector to Base Voltage, VCB (V) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0 0.5 1.0 VCE = 3 V 0 0.5 1.0 VCE = 3 V 200 100 0.5 5 15 0 10 VCE = 3 V 200 100 0.5 5 15 0 10 VCE = 3 V 5.0 2.0 1.0 0.5 0.2 0.1 15 25 0 10 20 f = 1 MHz 5.0 2.0 1.0 0.5 0.2 0.1 15 25 0 10 20 f = 1 MHz
TYPICAL PERFORMANCE CURVES (TA = 25˚C) UPA834TF GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product, fT (GHz) Collector Current, lc (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT Insertion Power Gain, |S21E|2 (dB) Collector Current, lc (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product, fT (GHz) Collector Current, lc (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT Insertion Power Gain, |S21E|2 (dB) Collector Current, lc (mA) Q1 Q2 Frequency, f (GHz) Insertion Power Gain, |S21E|2 (dB) INSERTION POWER GAIN vs. FREQUENCY Frequency, f (GHz) Insertion Power Gain, |S21E|2 (dB) INSERTION POWER GAIN vs. FREQUENCY 0.5 5.01.0 50 10 VCE = 3 V f = 1 GHz 0.5 5 15 0 10 VCE = 3 V f = 1.0 GHz 0.5 5 15 0 10 VCE = 3 V f = 1 GHz 0.5 5 1 50 100 10 VCE = 3 V f = 1.0 GHz VCE = 3 V lc = 7 mA VCE = 3 V lc = 7 mA
TYPICAL PERFORMANCE CURVES (TA = 25˚C) Q2Q1 NOISE FIGURE vs. COLLECTOR CURRENT Noise Figure, NF (dB) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT Noise Figure, NF (dB) Collector Current, lc (mA) 0.5 5.01.0 50 10 VCE = 3 V lc = 1GHz 0.5 5.01.0 50 100 10 VCE = 3 V lc = 1GHz
FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 1 mA, Z0 = 50 Ω TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 1 mA, Z0 = 50 Ω
TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 3 mA, Z0 = 50 Ω FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 3 mA, Z0 = 50 Ω
TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 5 mA, Z0 = 50 Ω VCE = 3 V, IC = 5 mA, Z0 = 50 Ω
TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 7 mA, Z0 = 50 Ω FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 7 mA, Z0 = 50 Ω
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -2/99DATA SUBJECT TO CHANGE WITHOUT NOTICE BUILT-IN TRANSISTORS Q1 Q2 3-pin small mini mold part No. NE68130 NE85630 The UPA831TF features the Q1 and Q2 in inverted positions. UPA834TF TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 10 mA, Z0 = 50 Ω PART NUMBER QUANTITY PACKAGING UPA834TF-T1 3000 Tape & Reel