UPA831TC NEC | Alldatasheet
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Caution Electro-static sensitive devices The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. NPN SILICON RF TWIN TRANSISTOR µµµµPA831TC NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE Document No. P14554EJ1V0DS00 (1st edition) Date Published November 1999 N CP(K) Printed in Japan DATA SHEET 1999©
DESCRIPTION
The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.
FEATURES
- Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
- High gain Q1 : |S21e| = 9.0 dB TYP., Q2 : |S21e| = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA
- Flat-lead 6-pin thin-type ultra super minimold package
- 2 different built-in transistors (2SC5006, 2SC5007) BUILT-IN TRANSISTORS Q1 Q2 3-pin ultra super minimold part No. 2SC5006 2SC5007
ORDERING INFORMATION
Part Number Package Quantity Supplying Form µPA831TC Loose products (50 pcs) µPA831TC-T1 Flat-lead 6-pin thin-type ultra super minimold Taping products (3 kp/reel) 8 mm wide embossed tape. Pin 6 (Q1 Base), pin 5 (Q2 Emitter), pin 4 (Q2 Base) face to perforation side of the tape. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPA831TC.)
Data Sheet P14554EJ1V0DS002 µµµµPA831TC ABSOLUTE MAXIMUM RATINGS (T A = +25°°°°C) Ratings Parameter Symbol Q1 Q2 Unit Collector to Base Voltage V CBO 20 20 V Collector to Emitter Voltage V CEO 12 10 V Emitter to Base Voltage V EBO 31 . 5 V Collector Current I C 100 65 mA Total Power Dissipation PT Note 200 in 1 element 200 in 1 element mW 230 in 2 elements Junction Temperature T j 150 150 °C Storage Temperature T stg −65 to +150 °C Note Mounted on 1.08 cm × 1.0 mm glass epoxy substrate. ELECTRICAL CHARACTERISTICS (T A = +25°°°°C) (1) Q1 Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector Cutoff Current I CBO VCB = 10 V, IE = 0 −− 1.0 µA Emitter Cutoff Current I EBO VEB = 1 V, IC = 0 −− 1.0 µA DC Current Gain h FE VCE = 3 V, IC = 7 mA Note 1 70 − 140 Gain Bandwidth Product f T VCE = 3 V, IC = 7 mA, f = 1 GHz 3.0 4.5 − GHz Feedback Capacitance C re VCB = 3 V, IE = 0, f = 1 MHz Note 2 − 0.7 1.5 pF Insertion Power Gain |S21e| VCE = 3 V, IC = 7 mA, f = 1 GHz 7.0 9.0 − dB Noise Figure NF V CE = 3 V, IC = 7 mA, f = 1 GHz − 1.2 2.5 dB Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter.
Data Sheet P14554EJ1V0DS00 3 µµµµPA831TC (2) Q2 Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector Cutoff Current I CBO VCB = 10 V, IE = 0 −− 0.8 µA Emitter Cutoff Current I EBO VEB = 1 V, IC = 0 −− 0.8 µA DC Current Gain h FE VCE = 3 V, IC = 7 mA Note 1 70 − 150 Gain Bandwidth Product f T VCE = 3 V, IC = 7 mA, f = 1 GHz 4.5 7.0 − GHz Feedback Capacitance C re VCB = 3 V, IE = 0, f = 1 MHz Note 2 −− 0.9 pF Insertion Power Gain |S21e| VCE = 3 V, IC = 7 mA, f = 1 GHz 10.0 12.0 − dB Noise Figure NF V CE = 3 V, IC = 7 mA, f = 1 GHz − 1.4 2.7 dB Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter. hFE CLASSIFICATION Rank FB Marking 24 hFE Value of Q1 70 to 140 hFE Value of Q2 70 to 150
Data Sheet P14554EJ1V0DS004 µµµµPA831TC TYPICAL CHARACTERISTICS (T A = +25°°°°C) Total Power Dissipation PT (mW) Ambient Temperature TA (°C) Total Power Dissipation PT (mW) Ambient Temperature TA (°C) Q1 Q2 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Collector Current IC (mA) Collector to Emitter Voltage VCE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current IC (mA) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE Collector Current IC (mA) Collector to Emitter Voltage VCE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current IC (mA) Base to Emitter Voltage VBE (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 0 50 100 150 100 200 230 2 Elements in total Free Air Free Air Per Element 0 50 100 150 100 200 230 2 Elements in total Per Element 0.5 1.0 VCE = 3 V 0.5 1.0 VCE = 3 V 123456 IB = 160 Aµ IB = 140 Aµ IB = 120 Aµ IB = 100 Aµ IB = 80 Aµ IB = 60 Aµ IB = 40 Aµ IB = 20 Aµ IB = 160 Aµ IB = 140 Aµ IB = 120 Aµ IB = 100 Aµ IB = 80 Aµ IB = 60 Aµ IB = 40 Aµ IB = 20 Aµ 123456
Data Sheet P14554EJ1V0DS00 5 µµµµPA831TC DC Current Gain hFE Collector Current IC (mA) DC Current Gain hFE Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT Insertion Power Gain S21e2 (dB) Collector Current IC (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT Gain Bandwidth Product fT (GHz) Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Insertion Power Gain S21e2 (dB) Collector Current IC (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT Gain Bandwidth Product fT (GHz) Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT DC CURRENT GAIN vs. COLLECTOR CURRENT 0.1 100 1 000 1 10 100 VCE = 3 V 0.1 100 1 000 11 0 VCE = 3 V 0.00 1.00 2.00 3.00 4.00 5.00 6.00 7.00 10 100 0.00 1.00 2.00 3.00 4.00 5.00 6.00 8.00 10 100 VCE = 3 V f = 1 GHz VCE = 3 V f = 1 GHz7.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 1 10 100 VCE = 3 V f = 1 GHz 2.00 4.00 6.00 8.00 10.00 12.00 16.00 1 10 100 14.00 VCE = 3 V f = 1 GHz
Data Sheet P14554EJ1V0DS006 µµµµPA831TC Insertion Power Gain S21e2 (dB) Frequency f (GHz) Insertion Power Gain S21e2 (dB) Frequency f (GHz) INSERTION POWER GAIN vs. FREQUENCY Feedback Capacitance Cre (pF) Collector to Base Voltage VCB (V) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Noise Figure NF (dB) Collector Current IC (mA) NOISE FIGURE vs. COLLECTOR CURRENT Feedback Capacitance Cre (pF) Collector to Base Voltage VCB (V) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Noise Figure NF (dB) Collector Current IC (mA) NOISE FIGURE vs. COLLECTOR CURRENT INSERTION POWER GAIN vs. FREQUENCY Q1 Q2 0.0 0.1 5.0 10.0 15.0 20.0 25.0 1.0 10.0 VCE = 3 V IC = 7 mA 0.0 0.1 5.0 10.0 15.0 20.0 25.0 1.0 10.0 VCE = 3 V IC = 7 mA 0.00 1.00 2.00 3.00 4.00 5.00 6.00 1 10 100 VCE = 3 V f = 1 GHz 0.00 1.00 2.00 3.00 4.00 5.00 6.00 1 10 100 VCE = 3 V f = 1 GHz 0.000 0.100 0.200 0.300 0.400 0.700 0.900 1 10 100 0.500 0.600 0.800 f = 1 MHz 0.000 0.050 0.100 0.150 0.200 0.250 0.300 0.350 0.400 0.450 0.500 1 10 100 f = 1 MHz
Data Sheet P14554EJ1V0DS00 7 µµµµPA831TC S-PARAMETERS Q1 VCE = 3 V, IC = 1 mA FREQUENCY S 11 S21 S12 S22 VCE = 3 V, IC = 3 mA FREQUENCY S 11 S21 S12 S22
Data Sheet P14554EJ1V0DS008 µµµµPA831TC VCE = 3 V, IC = 5 mA FREQUENCY S 11 S21 S12 S22 VCE = 3 V, IC = 7 mA FREQUENCY S 11 S21 S12 S22
Data Sheet P14554EJ1V0DS00 9 µµµµPA831TC S-PARAMETERS Q2 VCE = 3 V, IC = 1 mA FREQUENCY S 11 S21 S12 S22 VCE = 3 V, IC = 3 mA FREQUENCY S 11 S21 S12 S22
Data Sheet P14554EJ1V0DS0010 µµµµPA831TC VCE = 3 V, IC = 5 mA FREQUENCY S 11 S21 S12 S22 VCE = 3 V, IC = 7 mA FREQUENCY S 11 S21 S12 S22
Data Sheet P14554EJ1V0DS00 11 µµµµPA831TC VCE = 3 V, IC = 10 mA FREQUENCY S 11 S21 S12 S22
Data Sheet P14554EJ1V0DS0012 µµµµPA831TC PACKAGE DIMENSIONS FLAT-LEAD 6 PIN THIN-TYPE ULTRA SUPER MINIMOLD (UNIT: mm) (Top View) PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) 123 654 1.50±0.1 1.10±0.1 1.50±0.1 0.96 0.480.48 0.55±0.05 0.11+0.1–0.05 0.20+0.1 –0.05 Q1 Q2
Data Sheet P14554EJ1V0DS00 13 µµµµPA831TC [MEMO]
Data Sheet P14554EJ1V0DS0014 µµµµPA831TC [MEMO]
Data Sheet P14554EJ1V0DS00 15 µµµµPA831TC [MEMO]
µµµµPA831TC
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