UPA828TF

UPA828TF NEC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 20

Technical content

The information in this document is subject to change without notice. SILICON TRANSISTOR PP PPPA828TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 uuuu 2SC5184) THIN-TYPE SMALL MINI MOLD 1997© Document No. P12693EJ1V0DS00 (1st edition) Date Published July 1997 N Printed in Japan PRELIMINARY DATA SHEET PIN CONFIGURATION (Top View)

FEATURES

• Low noise NF = 1.3 dB TYP. @ V CE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• 6-pin thin-type small mini mold package adopted
• Built-in 2 transistors (2 u 2SC5184)

ORDERING INFORMATION

Part Number Quantity Packing Style PPA828TF Loose products (50 pcs) PPA828TF-T1 Taping products (3 kpcs/reel) Remar k If you require an evaluation sample, please contact an NEC Sales Representative (Unit sample quantity is 50 pcs). ABSOLUTE MAXIMUM RATINGS (T A = 25qqqqC) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 5V Collector to Emitter Voltage VCEO 3V Emitter to Base Voltage VEBO 2V Collector Current IC 30 mA Total Power Dissipation PT 90 in 1 element 180 in 2 elements mW Junction Temperature Tj 150 °C Storage Temperature Tstg ð65 to +150 °C Caution is required concerning excess input, such as from static electricity, due to the high-precision fabrication processes used for this device. Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation side of the tape. PACKAGE DRAWINGS (Unit: mm) Q1 Q2 6 5 4 321 E2 B2 C1 E1 C2 PIN CONNECTIONS 1. Collector(Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter(Q2) 6. Base (Q1) R86 2.00±0.2 1.300.60±0.1 0 to 0.1 0.45 0.65 32 1 45 6 0.65 2.10±0.1 1.25±0.1 0.13±0.05 0.22+0.1 –0.05

ELECTRICAL CHARACTERISTICS (T A = 25°C) Parameter Symbol Condition MIN. TYP. MAX. Unit Collector Cutoff Current I CBO VCB = 5 V, IE = 0 0.1 PA Emitter Cutoff Current I EBO VEB = 1 V, IC = 0 0.1 PA DC Current Gain h FE VCE = 2 V, IC = 20 mA Note 1 70 140 Gain Bandwidth Product (1) fT VCE = 2 V, IC = 20 mA, f = 2 GHz 9 11 GHz Gain Bandwidth Product (2) fT VCE = 1 V, IC = 10 mA, f = 2 GHz 7 9 GHz Feedback Capacitance C re VCB = 2 V, IE = 0, f = 1 MHz Note 2 0.4 0.8 pF Insertion Power Gain (1) |S 21e| VCE = 2 V, IC = 20 mA, f = 2 GHz 7 8.5 dB Insertion Power Gain (2) |S 21e| VCE = 1 V, IC = 10 mA, f = 2 GHz 6 7.5 dB Noise Figure (1) NF V CE = 2 V, IC = 3 mA, f = 2 GHz 1.3 2 dB Noise Figure (2) NF V CE = 1 V, IC = 3 mA, f = 2 GHz 1.3 2 dB hFE Ratio h FE1 /hFE2 VCE = 2 V, IC = 20 mA hFE 1 = smaller hFE value among Q1 and Q2 hFE 2 = larger hFE value among Q1 and Q2 0.85 Notes 1. Pulse measurement PW d 350 Ps, Duty cycle d 2% 2. Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge method). Emitter should be connected to the guard pin of capacitance meter. hFE CLASSIFICATION Rank KB Marking R86 hFE value 70 to 140

TYPICAL CHARACTERISTICS (T A = 25 qqqqC) Total Power Dissipation vs. Ambient Temperature Collector Current vs. DC Base Voltage 200 100 0 50 100 150 90 mW Ambient Temperature TA (˚C) Total Power Dissipation PT (mW) 0 0.5 1.0 V CE = 2 V DC Base Voltage VBE (V) Collector Current IC (mA) Collector Current vs. Collector to Emitter Voltage DC Current Gain vs. Collector Current 0 1.0 2.0 3.0 200 A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A IB = 20 A Collector to Emitter Voltage VCE (V) Collector Current IC (mA) 180 mW2 Elements in Total Per Element Collector Current IC (mA) DC Current Gain hFE 500 200 100 VCE = 2 V VCE = 1 V 1 2 5 10 20 50 100 µ µ µ µ µ µ µ µ µ µ

Noise Figure vs. Collector Current Feedback Capacitance vs. Collector to Base Voltage 12 3 5 7 1 0 Collector Current IC (mA) Noise Figure NF (dB)VCE = 1 V VCE = 2 V f = 1 MHz 0.8 0.6 0.4 0.2 Collector to Base Voltage V CB (V) Feedback Capacitance Cre (pF) f = 2 GHz Gain Bandwidth Product vs. Collector Current Insertion Power Gain vs. Collector Current f = 2 GHz 12 3 5 7 1 0 2 0 Gain Bandwidth Product fT (GHz) Collector Current IC (mA) VCE = 1 V VCE = 2 V 12 3 5 7 1 0 2 0 VCE = 1 V VCE = 2 V Insertion Power Gain |S21e|2 (dB) Collector Current IC (mA) f = 2 GHz

VCE = 2 V, IC = 1 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22

VCE = 2 V, IC = 3 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22

VCE = 2 V, IC = 5 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22

VCE = 2 V, IC = 7 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22

VCE = 2 V, IC = 10 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22

VCE = 2 V, IC = 20 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22

VCE = 2 V, IC = 1 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22

VCE = 2 V, IC = 3 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22

VCE = 2 V, IC = 5 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22

VCE = 2 V, IC = 7 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22

VCE = 2 V, IC = 10 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22

VCE = 2 V, IC = 20 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22

[MEMO]

[MEMO]

[MEMO]

No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5