UPA826TF NEC | Alldatasheet
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Technical content
UPA826TFNPN SILICON EPITAXIAL TWIN TRANSISTOR
- LOW NOISE AND HIGH GAIN
- OPERABLE AT LOW VOLTAGE
- SMALL FEEDBACK CAPACITANCE: Cre = 0.4 pF TYP
- SMALL PACKAGE STYLE: 2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package
FEATURES
DESCRIPTION
California Eastern Laboratories OUTLINE DIMENSIONS (Units in mm) 2.1 – 0.1 1.25 – 0.1 0 ~ 0.1 0.13 – 0.05 0.6 – 0.1 2.0 – 0.2 0.65 1.3 3 4 0.22 (All Leads) +0.10 - 0.05 0.45 PART NUMBER UPA826TF PACKAGE OUTLINE TS06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 hFE DC Current Gain1 at VCE = 3 V, IC = 10 mA 75 110 150 fT Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz GHz 12 Cre Feedback Capacitance 2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.4 0.7 |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz dB 7 8.5 NF Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz dB 1.5 2.5 hFE1/hFE2 hFE Ratio, VCE = 3 V, Ic = 10 mA 0.85 1.0 hFE1 = Smaller hFE value between Q1 and Q2 hFE2 = Larger hFE value between Q1 and Q2 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitances meter. PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) The UPA826TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored applications. This device is suitable for very low voltage/low current, and low noise applications. The thinner package style allows for higher density designs. Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.
TYPICAL PERFORMANCE CURVES (TA = 25˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE Collector Current, lc (mA) Collector to Emitter Voltage, VCE (V) COLLECTOR CURRENT vs. DC BASE VOLTAGE Collector Current, lc (mA) DC Base Voltage, VBE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain, hFE Collector Current, lc (mA) ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 30 PT Total Power Dissipation
1 Element mW 150
2 Elements2 mW 200
TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1.Operation in excess of any one of these parameters may result in permanent damage. 2.When operating both devices, the power dissipation for either device should not exceed 110 mW. 200 100 0 50 100 150 Free Air
2 Elements in Total
0 0.5 1.0 VCE = 3 V 01 2 3 4 5 6 500 µA 400 µA 300 µA 200 µA lB=100 µA 200 100 12 51 0 2 0 5 00.1 0.2 0.5 100 5 V VCE = 3 V
TYPICAL PERFORMANCE CURVES (TA = 25˚C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product, fT (GHz) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT Noise Figure, NF (dB) Collector Current, lc (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT Insertion Power Gain, |S21E|2 (dB) Collector Current, lc (mA) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Feedback Capacitance, Cre (pF) Collector to Base Voltage, VCB (V) 12 5 1 0 2 0 5 00.5 5 V 3 V f = 2 GHz VCE = 1 V 2 5 10 20 501 f = 2 GHz 5 V 3 V VCE = 1 V 12 5 1 0 2 0 5 00.5 VCE = 3 V f = 2 GHz 0.6 0.5 0.4 0.3 0.2 12 5 1 0 2 00.5 f = 1 MHz
FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG UPA826TF TYPICAL SCATTERING PARAMETERS (TA = 25°C) VCE = 3 V, IC = 1 mA, ZO = 50 Ω FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 1 mA, ZO = 50 Ω
FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG UPA826TF TYPICAL SCATTERING PARAMETERS (TA = 25°C) FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 3 mA, ZO = 50 Ω VCE = 3 V, IC = 3 mA, ZO = 50 Ω
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -2/99DATA SUBJECT TO CHANGE WITHOUT NOTICE UPA826TF TYPICAL SCATTERING PARAMETERS (TA = 25°C) VCE = 3 V, IC = 10 mA, ZO = 50 Ω VCE = 3 V, IC = 10 mA, ZO = 50 Ω FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG PART NUMBER QUANTITY PACKAGING UPA826TF-T1 3000 Tape & Reel