UPA826TF RENESAS | Alldatasheet
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.
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The information in this document is subject to change without notice. SILICON TRANSISTOR PPPPPA826TF HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 uuuu 2SC4959) THIN -TYPE SMALL MINI MOLD 1997© Document No. P12691EJ1V0DS00 (1st edition) Date Published July 1997 N Printed in Japan PRELIMINARY DATA SHEET PIN CONFIGURATION (Top View)
FEATURES
- Low noise and high gain
- Operable at low voltage
- Small feedback capacitance C re = 0.4 pF TYP.
- Built-in 2 transistors (2 u 2SC4959)
- 6-pin thin-type small mini mold package adopted
ORDERING INFORMATION
Part Number Quantity Packing Style PPA826TF Loose products (50 pcs) PPA826TF-T1 Taping products (3 kpcs/reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative (unit sample quantity is 50 pcs). ABSOLUTE MAXIMUM RATINGS (T A = 25qqqqC) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 9V Collector to Emitter Voltage VCEO 6V Emitter to Base Voltage V EBO 2V Collector Current I C 30 mA Total Power Dissipation P T 150 in 1 element 200 in 2 elements Note mW Junction Temperature T j 150 °C Storage Temperature T stg ð65 to 150 °C Note 110 mW must not be exceeded for 1 element. Caution is required concerning excess input, such as from static electricity, due to the high-precision fabrication processes used for this device. Embossed tape 8 mm wide. Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perfora- tion side of the tape. PACKAGE DRAWINGS (Unit: mm) Q1 Q2 65 4 321 E2 B2 C1 E1 C2 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) R83 2.00±0.2 1.300.60±0.1 0 to 0.1 0.45 0.65 32 1 45 6 0.65 2.10±0.1 1.25±0.1 0.13±0.05 0.22+0.1 –0.05 Discontinued Product
ELECTRICAL CHARACTERISTICS (T A = 25 °C) Parameter Symbol Condition MIN. TYP. MAX. Unit Collector Cutoff Current I CBO VCB = 5 V, IE = 0 0.1 PA Emitter Cutoff Current I EBO VEB = 1 V, IC = 0 0.1 PA DC Current Gain h FE VCE = 3 V, IC = 10 mA Note 1 75 150 Gain Bandwidth Product f T VCE = 3 V, IC = 10 mA, f = 2 GHz 12 GHz Feedback Capacitance C re VCB = 3 V, IE = 0, f = 1 MHz Note 2 0.4 0.7 pF Insertion Power Gain |S 21e| VCE = 3 V, IC = 10 mA, f = 2 GHz 7 8.5 dB Noise Figure NF V CE = 3 V, IC = 3 mA, f = 2 GHz 1.5 2.5 dB hFE Ratio h FE1 /hFE2 VCE = 3 V, IC = 10 mA hFE1 = Smaller hFE value among Q1 and Q2 hFE2 = Larger hFE value among Q1 and Q2 0.85 Notes 1. Pulse measurement PW d 350 Ps, Duty cycle d 2% 2. Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge method). Emitter should be connected to the guard pin of capacitance meter. hFE CLASSIFICATION Rank KB Marking R83 hFE value 75 to 150 TYPICAL CHARACTERISTICS (T A = 25 qqqqC) 50 100 150 100 Total Power Dissipation PT (mW) Ambient Temperature TA (°C) 200 Free Air Total Power Dissipation vs. Ambient Temperature 0.5 1.0 Collector Current IC (mA) DC Base Voltage VBE (V) Per Element VCE = 3 V
2 Elements in Total
Collector Current vs. DC Base Voltage Discontinued Product
0.5 Gain Bandwidth Product fT (GHz) Collector Current IC (mA) Gain Bandwidth Product vs. Collector Current 12 51 0 2 0 5 0 1 Insertion Power Gain |S21e|2 (dB) Collector Current IC (mA) 2 5 10 20 50 Collector Current IC (mA) Collector to Emitter Voltage VCE (V) DC Current Gain vs. Collector Current DC Current Gain hFE Collector Current IC (mA) 100 200 0.1 IB = 100 A 200 A 300 A 400 A 500 Aµ µ µ µ µ 0.2 0.5 1 2 5 V VCE = 3 V 5 10 20 50 100 f = 2 GHz 5 V 3 V f = 2 GHz 0.5 Collector Current IC (mA) 0.5 Feedback Capacitance Cre (pF) Collector to Base Voltage VCB (V) 0.2 1 5 10 20 Noise Figure NF (dB) 12 5 2 0 5 0 f = 1 MHz 0.3 0.4 0.5 0.6 f = 2 GHz VCE = 3 V VCE = 1 V 3 V 5 V VCE = 1 V Collector Current vs. Collector-to-Emitter Voltage Insertion Power Gain vs. Collector Current Noise Figure vs. Collector Current Feedback Capacitance vs. Collector-to-Base Voltage 123456 Discontinued Product
VCE = 3 V, IC = 1 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22 Discontinued Product
VCE = 3 V, IC = 3 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22 Discontinued Product
VCE = 3 V, IC = 5 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22 Discontinued Product
VCE = 3 V, IC = 10 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22 Discontinued Product
VCE = 3 V, IC = 1 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22 Discontinued Product
VCE = 3 V, IC = 3 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22 Discontinued Product
VCE = 3 V, IC = 5 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22 Discontinued Product
VCE = 3 V, IC = 10 mA, Z0 = 50 : FREQUENCY S 11 S21 S12 S22 Discontinued Product
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5 Discontinued Product