UPA822TF NEC | Alldatasheet
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Technical content
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 2/99DATA SUBJECT TO CHANGE WITHOUT NOTICE
- SMALL PACKAGE OUTLINE: SOT-363 package measures just 2.0 mm x 1.25 mm
- LOW HEIGHT PROFILE: Just 0.60 mm high
- HIGH COLLECTOR CURRENT: IC MAX = 65 mA
FEATURES
DESCRIPTION
The UPA822TF contains two NE681 NPN high frequency silicon bipolar chips. NEC's new low profile TF package is ideal for all portable wireless applications where reducing compo- nent height is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/ buffer amplifier and other applications. ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 10 VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 65 PT Total Power Dissipation
1 Die mW 110
2 Die mW 200
T J Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1.Operation in excess of any one of these parameters may result in permanent damage. Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA822TF-T1, 3K per reel. PART NUMBER UPA822TF PACKAGE OUTLINE TS06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 0.8 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.8 hFE Forward Current Gain1 at VCE = 3 V, IC = 7 mA 70 100 240 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 4.5 7.0 Cre Feedback Capacitance 2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.9 |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 10 12 NF Noise Figure at V CE = 3 V, IC = 7 mA, f = 1 GHz dB 1.4 1.7 hFE1 /hFE2 hFE Ratio: 0.85 ELECTRICAL CHARACTERISTICS (TA = 25°C) hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE TS06 (Top View) 2.1 ± 0.1 1.25 ± 0.1 0 ~ 0.1 0.13 ± 0.05 0.6 ± 0.1 2.0 ± 0.2 0.65 1.3 3 4 0.22 (All Leads) +0.10 - 0.05 0.45 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) California Eastern Laboratories Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.