UPA821TF NEC | Alldatasheet
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Technical content
UPA821TFNPN SILICON EPITAXIAL TWIN TRANSISTOR
- LOW NOISE: NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
- HIGH GAIN: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
- SMALL PACKAGE STYLE: 2 NE856 die in a 2 mm x 1.25 mm x 0.6 mm package
FEATURES
DESCRIPTION
The UPA821TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored applications. Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The thinner package style allows for higher density designs. PRELIMINARY DATA SHEET PART NUMBER UPA821TF PACKAGE OUTLINE TS06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 1.0 hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA 70 140 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA GHz 3.0 4.5 Cre Feedback Capacitance 2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.7 1.5 |S21E|2 Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 7 9 NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 1.2 2.5 hFE1/hFE2 hFE ratio, VCE = 3 V, Ic = 7 mA 0.85 1.0 hFE1 = Smaller hFE value between Q1 and Q2 hFE2 = Larger hFE value between Q1 and Q2 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter. California Eastern Laboratories OUTLINE DIMENSIONS (Units in mm) 2.1 – 0.1 1.25 – 0.1 0 ~ 0.1 0.13 – 0.05 0.6 – 0.1 2.0 – 0.2 0.65 1.3 3 4 0.22 (All Leads) +0.10 - 0.05 0.45 R81 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Base (Q2) 5. Emitter (Q2) 6. Base (Q1) PIN CONFIGURATION (Top View) Note: Pin 3 is identified with a circle on the bottom of the package. B1 E2 B2 C1 E1 C2 65 4 Q1 Q2
ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 12 VEBO Emitter to Base Voltage V 3 IC Collector Current mA 100 PT Total Power Dissipation
1 Die mW 150
2 Die2 mW 200
TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1.Operation in excess of any one of these parameters may result in permanent damage. 2.When operating both devices, the power dissipation for either device should not exceed 110 mW. UPA821TF TYPICAL PERFORMANCE CURVES (TA = 25˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Total Power Dissipation, PT (mW) Ambient Temperature, TA (°C) COLLECTOR CURRENT vs. DC BASE VOLTAGE Collector Current, lc (mA) DC Base Voltage, VBE (V) COLLECTOR CURRENT vs. EMITTER VOLTAGE Collector Current, lc (mA) Collector to Emitter Voltage, VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT DC Current Gain,hFE Collector Current, lc (mA) 200 100 0 50 100 150
2 Elements in Total
0.5 1.0 VCE = 3 V 05 1 0 lB=160 µA 140 µA 120 µA 100 µA 80 µA 60 µA 40 µA 20 µA 5.0 2.0 1.0 0.5 0.2 0.1 12 5 1 0 2 0 5 0 f = 1 MHz
TYPICAL PERFORMANCE CURVES (TA = 25˚C) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT Gain Bandwidth Product, fT (GHz) Collector Current, lc (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT Insertion Power Gain, |S21E|2 (dB) Collector Current, lc (mA) NOISE FIGURE vs. COLLECTOR CURRENT Noise Figure, NF (dB) Collector Current, lc (mA) INSERTION POWER GAIN vs. FREQUENCY Insertion Power Gain, |S21E|2 (dB) Frequency, f (GHz) FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Feedback Capacitance, CRE (pF) Collector to Base Voltage, VCB (V) 0.5 1 5 10 50 VCE = 3 V f = 1 GHz 0.5 1 5 10 50 100 VCE = 3 V f = 1 GHz 0.5 1.0 5.0 10 50 100 VCE = 3 V f = 1 GHz VCE = 3 V lc = 7 mA 5.0 2.0 1.0 0.5 0.2 0.1 12 5 1 0 2 0 5 0 f = 1 MHz
TYPICAL SCATTERING PARAMETERS VCE = 3 V, IC = 1 mA, Z0 = 50 Ω UPA821TF FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, IC = 1 mA, Z0 = 50 Ω FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG
VCE = 3 V, IC = 3 mA, Z0 = 50 Ω FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG UPA821TF VCE = 3 V, IC = 3 mA, Z0 = 50 Ω FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG TYPICAL SCATTERING PARAMETERS
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98DATA SUBJECT TO CHANGE WITHOUT NOTICE TYPICAL SCATTERING PARAMETERS VCE = 3 V, IC = 7 mA, Z0 = 50 Ω FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG UPA821TF VCE = 3 V, IC = 7 mA, Z0 = 50 Ω FREQUENCY S 11 S21 S12 S22 (GHz) MAG ANG MAG ANG MAG ANG MAG ANG PART NUMBER QUANTITY PACKAGING UPA821TF-T1 3000 Tape & Reel