UPA814TC NEC | Alldatasheet
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Technical content
NPN SILICON RF TWIN TRANSISTOR
FEATURES
- Low voltage operation, low phase distortion
- Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
- Flat-lead 6-pin thin-type ultra super minimold package.
- Built-in 2 transistors (2 × 2SC5195)
ORDERING INFORMATION
Part Number Package Quantity Supplying Form µPA814TC Flat-lead 6-pin Loose products Embossed tape 8 mm wide. thin-type ultra (50 pcs) Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to super minimold perforation side of the tape . µPA814TC-T1 Taping products (3 kp/reel) Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: µPA814TC. Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (T A = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage V CBO 9V Collector to Emitter Voltage V CEO 6V Emitter to Base Voltage V EBO 2V Collector Current I C 100 mA Total Power Dissipation P TNote 200 in 1 element mW 230 in 2 elements Junction Temperature T j 150 ˚C Storage Temperature T stg –65 to +150 ˚C Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate. Caution Electro-static sensitive devices µPA814TC NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC5195) FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD Printed in Japan Document No. P14551EJ1V0DS00 (1st edition) Date Published November 1999 N CP(K) © 1999 DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
µPA814TC
2 Data Sheet P14551EJ1V0DS00
ELECTRICAL CHARACTERISTICS (T A = +25 °C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector Cutoff Current I CBO VCB = 5 V, IE = 0 – – 0.1 µA Emitter Cutoff Current I EBO VEB = 1 V, IC = 0 – – 0.1 µA DC Current Gain h FE VCE = 1 V, IC = 3 mANote 1 80 – 160 Gain Bandwidth Product (1) f T VCE = 1 V, IC = 3 mA, f = 2 GHz 4.0 4.5 – GHz Gain Bandwidth Product (2) f T VCE = 3 V, IC = 20 mA, f = 2 GHz – 9.0 – GHz Feedback Capacitance C re VCB = 1 V, IE = 0, f = 1 MHzNote 2 – 0.75 0.85 pF Insertion Power Gain (1) |S 21e|2 VCE = 1 V, IC = 3 mA, f = 2 GHz 2.5 3.5 – dB Insertion Power Gain (2) |S 21e|2 VCE = 3 V, IC = 20 mA, f = 2 GHz – 6.5 – dB Noise Figure (1) NF V CE = 1 V, IC = 3 mA, f = 2 GHz – 1.7 2.5 dB Noise Figure (2) NF V CE = 3 V, IC = 7 mA, f = 2 GHz – 1.5 – dB Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty Cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank KB Marking 87 hFE Value 80 to 160
µPA814TC Data Sheet P14551EJ1V0DS00 3 TYPICAL CHARACTERISTICS (T A = +25 °C) Collector Current IC (mA) Base to Emitter Voltage VBE (V) Total Power Dissipation PT (mW) Ambient Temperature TA (°C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Gain Bandwidth Product fT (GHz) Collector Current IC (mA) GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT DC Current Gain hFE Collector Current IC (mA) DC CURRENT GAIN vs. COLLECTOR CURRENT Insertion Power Gain S21e2 (dB) Collector Current IC (mA) INSERTION POWER GAIN vs. COLLECTOR CURRENT Collector Current IC (mA) Collector to Emitter Voltage VCE (V) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 1 V 0.01 0.02 0.05 0.1 0.2 0.5 100 0 0.5 1 100 230 200 0 50 100 150 0123456 5.000 15.000 1 10 100 100 1 000 0.1 1 10 100 0.000 2.000 4.000 6.000 8.000 9.000 1 10 100
2 Elements in total Free Air
VCE = 1 V IB = 160 Aµ IB = 140 Aµ IB = 120 Aµ IB = 100 Aµ IB = 80 Aµ IB = 60 Aµ IB = 40 Aµ IB = 20 Aµ 13.000 11.000 9.000 7.000 VCE = 1 V VCE = 3 V f = 2 GHz f = 2 GHz VCE = 1 V VCE = 3 V
µPA814TC
4 Data Sheet P14551EJ1V0DS00
Feedback Capacitance Cre (pF) Collector to Base Voltage VCB (V) Noise Figure NF (dB) Collector Current IC (mA) NOISE FIGURE vs. COLLECTOR CURRENT Maximum Available Power Gain MAG. (dB) Insertion Power Gain S21e2 (dB) Frequency f (GHz) INSERTION POWER GAIN/MAXIMUM AVAILABLE GAIN vs. FREQUENCY FEEDBACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 1.00 0.00 2.00 3.00 4.00 5.00 6.00 1 10 100 0.100 0.000 0.200 0.300 0.400 0.500 0.600 0.700 0.800 1 10 100 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0.1 1.0 10.0 VCE = 1 V VCE = 3 V f = 2 GHz f = 1 MHz VCE = 3 V IC = 20 mA VCE = 1 V IC = 3 mA
µPA814TC Data Sheet P14551EJ1V0DS00 5 S-PARAMETERS Q1 V CE = 1 V, IC = 1 mA FREQUENCY S 11 S 21 S 12 S 22 V CE = 1 V, IC = 3 mA FREQUENCY S 11 S 21 S 12 S 22
µPA814TC
6 Data Sheet P14551EJ1V0DS00
V CE = 1 V, IC = 5 mA FREQUENCY S 11 S 21 S 12 S 22 V CE = 1 V, IC = 7 mA FREQUENCY S 11 S 21 S 12 S 22
µPA814TC Data Sheet P14551EJ1V0DS00 7 V CE = 1 V, IC = 10 mA FREQUENCY S 11 S 21 S 12 S 22
µPA814TC
8 Data Sheet P14551EJ1V0DS00
V CE = 3 V, IC = 1 mA FREQUENCY S 11 S 21 S 12 S 22 V CE = 3 V, IC = 3 mA FREQUENCY S 11 S 21 S 12 S 22
µPA814TC Data Sheet P14551EJ1V0DS00 9 V CE = 3 V, IC = 5 mA FREQUENCY S 11 S 21 S 12 S 22 V CE = 3 V, IC = 7 mA FREQUENCY S 11 S 21 S 12 S 22
µPA814TC
10 Data Sheet P14551EJ1V0DS00
V CE = 3 V, IC = 10 mA FREQUENCY S 11 S 21 S 12 S 22 V CE = 3 V, IC = 20 mA FREQUENCY S 11 S 21 S 12 S 22
µPA814TC Data Sheet P14551EJ1V0DS00 11 S-PARAMETERS Q2 V CE = 1 V, IC = 1 mA FREQUENCY S 11 S 21 S 12 S 22 V CE = 1 V, IC = 3 mA FREQUENCY S 11 S 21 S 12 S 22
µPA814TC
12 Data Sheet P14551EJ1V0DS00
V CE = 1 V, IC = 5 mA FREQUENCY S 11 S 21 S 12 S 22 V CE = 1 V, IC = 7 mA FREQUENCY S 11 S 21 S 12 S 22
µPA814TC Data Sheet P14551EJ1V0DS00 13 V CE = 1 V, IC = 10 mA FREQUENCY S 11 S 21 S 12 S 22
µPA814TC
14 Data Sheet P14551EJ1V0DS00
V CE = 3 V, IC = 1 mA FREQUENCY S 11 S 21 S 12 S 22 V CE = 3 V, IC = 3 mA FREQUENCY S 11 S 21 S 12 S 22
µPA814TC Data Sheet P14551EJ1V0DS00 15 V CE = 3 V, IC = 5 mA FREQUENCY S 11 S 21 S 12 S 22 V CE = 3 V, IC = 7 mA FREQUENCY S 11 S 21 S 12 S 22
µPA814TC
16 Data Sheet P14551EJ1V0DS00
V CE = 3 V, IC = 10 mA FREQUENCY S 11 S 21 S 12 S 22 V CE = 3 V, IC = 20 mA FREQUENCY S 11 S 21 S 12 S 22
µPA814TC Data Sheet P14551EJ1V0DS00 17 PACKAGE DIMENSIONS FLAT-LEAD 6 PIN THIN-TYPE ULTRA SUPER MINIMOLD (UNIT: mm) PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Emitter (Q2) 5. Base (Q2) 6. Base (Q1) 123 654 1.50±0.1 1.10±0.1 1.50±0.1 0.96 0.480.48 0.55±0.05 0.11+0.1 –0.05 0.20+0.1 –0.05 Q1 Q2 (Top View)
µPA814TC
18 Data Sheet P14551EJ1V0DS00
[MEMO]
µPA814TC Data Sheet P14551EJ1V0DS00 19 [MEMO]
µPA814TC
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