UPA813T-T1

UPA813T NEC | Alldatasheet

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Technical content

© 1995 PRELIMINARY DATA SHEET PACKAGE DRAWINGS (Unit: mm) SILICON TRANSISTOR µPA813T has built-in 2 transistors which were developed for UHF.

FEATURES

• High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz)
• Small Collector Capacitance C ob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz)
• A Surface Mounting Package Adopted
• Built-in 2 Transistors (2 × 2SC4570)

ORDERING INFORMATION

PART NUMBER QUANTITY PACKING STYLE µPA813T Loose products Embossed tape 8 mm wide. Pin 6 (Q1 (50 PCS) Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to perforation side of the tape. µPA813T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage V CBO 20 V Collector to Emitter Voltage V CEO 12 V Emitter to Base Voltage V EBO 3V Collector Current I C 30 mA Total Power Dissipation P T 120 in 1 element mW 160 in 2 elementsNote Junction Temperature T j 125 ˚C Storage Temperature T stg –55 to +125 ˚C Note 90 mW must not be exceeded in 1 element. µPA813T NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ××××× 2SC4570) SMALL MINI MOLD Document No. P11466EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan The information in this document is subject to change without notice. PIN CONFIGURATION (Top View) PIN CONNECTIONS 1. Collector (Q1) 2. Base (Q2) 3. Collector (Q2) 4. Emitter (Q2) 5. Emitter (Q1) 6. Base (Q1) Q 1 Q 2 2.1±0.1 1.25±0.1 0.2 –0 +0.1 0.65 0.65 1.3 2.0±0.2 0.9±0.1 0.7 0 to 0.1 0.15 –0 +0.1 X Y

µPA813T ELECTRICAL CHARACTERISTICS (T A = 25 °C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector Cutoff Current I CBO VCB = 15 V, IE = 0 0.1 µA Emitter Cutoff Current I EBO VEB = 1 V, IC = 0 0.1 µA Collector to Emitter V CE (sat) hFE = 10, IC = 5 mA 0.5 V Saturation Voltage DC Current Gain h FE VCE = 5 V, IC = 5 mANote 1 60 200 Gain Bandwidth Product f T VCE = 5 V, IC = 5 mA, f = 1 GHz 5.5 GHz Feed-back Capacitance C re VCB = 5 V, IE = 0, f = 1 MHzNote 2 0.7 0.9 pF Insertion Power Gain |S 21e|2 VCE = 5 V, IC = 5 mA, f = 1 GHz 5 dB hFE Ratio h FE1 /hFE2 VCE = 5 V, IC = 5 mA 0.85 A smaller value among h FE of hFE 1 = Q1, Q2 A larger value among h FE of hFE 2 = Q1, Q2 Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank FB GB Marking 73T 74T hFE Value 60 to 120 100 to 200 TYPICAL CHARACTERISTICS (T A = 25 °C) 100 150 120 mW 160 mW 100 150 VCE = 5 V 0.2 0.4 0.6 0.8 1.0 Collector Current IC (mA) IC - VBE Characteristics Base to Emitter Voltage VBE (V) PT - TA Characteristics Total Power Dissipation PT (mW) Ambient Temperature TA (°C) Free Air

2 Elements in Total

µPA813T 0.1 Frequency f (GHz) 3 V Collector Copacitance Cob (pF) Collector to Base Voltage VCB (V) C ob - VCB Characteristics 0.1 0.2 0.5 0.7 2.0 Insertion Power Gain l S21e l 2 (dB) l S21e l 2 - f Characteristics 0.2 0.5 1.0 2.0 5.0 IC = 5 mA 1.0 f = 1 MHz 0.5 Gain Bandwidth Product fT (GHz) Collector Current IC (mA) fT - IC Characteristics f = 1 GHz 100 3 V VCE = 5 V 0.5 Insertion Power Gain l S21e l 2 (dB) Collector Current IC (mA) l S21e l 2 - IC Characteristics f = 1 GHz 3 V VCE = 5 V Collector Current IC (mA) Collector to Emitter Voltage VCE (V) IC - VCE Characteristics DC Current Gain hFE Collector Current IC (mA) hFE - IC Characteristics 100 200 0.5 VCE = 5 V VCE = 5 V IB = 160 A µ 140 A µ 100 A µ 40 A µ 120 A µ 80 A µ 60 A µ 20 A µ

µPA813T S-PARAMETERS (VCE = 3 V, IC = 1 mA) FREQUENCY S 11 S 21 S 12 S 22 MHz MAG ANG MAG ANG MAG ANG MAG ANG (VCE = 3 V, IC = 3 mA) FREQUENCY S 11 S 21 S 12 S 22 MHz MAG ANG MAG ANG MAG ANG MAG ANG

µPA813T S-PARAMETERS (VCE = 3 V, IC = 5 mA) FREQUENCY S 11 S 21 S 12 S 22 MHz MAG ANG MAG ANG MAG ANG MAG ANG (VCE = 5 V, IC = 1 mA) FREQUENCY S 11 S 21 S 12 S 22 MHz MAG ANG MAG ANG MAG ANG MAG ANG

µPA813T S-PARAMETERS (VCE = 5 V, IC = 3 mA) FREQUENCY S 11 S 21 S 12 S 22 MHz MAG ANG MAG ANG MAG ANG MAG ANG (VCE = 5 V, IC = 5 mA) FREQUENCY S 11 S 21 S 12 S 22 MHz MAG ANG MAG ANG MAG ANG MAG ANG

µPA813T [MEMO]

µPA813T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11