UPA809TF NEC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 1
Technical content
- SMALL PACKAGE OUTLINE: SOT-363 package measures just 2 mm x 1.25 mm
- LOW HEIGHT PROFILE: Just 0.60 mm high
- HIGH COLLECTOR CURRENT: IC MAX = 100 mA FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE TS06 (Top View)
DESCRIPTION
The UPA809TF contains two NE688 NPN high frequency silicon bipolar chips. NEC's new low profile TF package is ideal for all portable wireless applicatons where reducing compo- nent height is a prime consideration. Each transistor chip is independently mounted and easily configured for two stage cascade LNAs and other similar applications. ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 9 VCEO Collector to Emitter Voltage V 6 VEBO Emitter to Base Voltage V 2 IC Collector Current mA 100 PT Total Power Dissipation
1 Die mW 110
2 Die mW 200
T J Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. PART NUMBER UPA809TF PACKAGE OUTLINE TS06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 5V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 hFE Forward Current Gain1 at VCE = 1 V, IC = 3 mA 80 110 160 fT Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz GHz 9.0 Cre Feedback Capacitance 2 at VCB = 1 V, IE = 0, f = 1 MHz pF 0.75 0.85 |S21E|2 Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz dB 6.5 NF Noise Figure at V CE = 3 V, IC = 7 mA, f = 2 GHz dB 1.5 hFE1 /hFE2 hFE Ratio: 0.85 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA809TF-T1, 3K per reel. PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 hFE1 = Smaller Value of Q1, or Q2 hFE2 = Larger Value of Q1 or Q2 California Eastern Laboratories 2.1 ± 0.1 1.25 ± 0.1 0 ~ 0.1 0.13 ±0.05 0.6 ± 0.1 0.45 2.0 ± 0.2 0.65 1.3 3 4 (All Leads)0.22 +0.10 - 0.05 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 2/99DATA SUBJECT TO CHANGE WITHOUT NOTICE Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.