UPA808TC NEC | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
- SMALL PACKAGE OUTLINE: 1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package
- LOW HEIGHT PROFILE Just 0.55 mm high
- FLAT LEAD STYLE: Reduced lead inductance improves electrical performance
- HIGH COLLECTOR CURRENT: IC MAX = 65 mA
FEATURES
- Collector Q1 2. Emitter Q1 3. Collector Q2 4. Emitter Q2 5. Base Q2 6. Base Q1 California Eastern Laboratories PRELIMINARY DATA SHEET OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE TC (Top View) 0.11+0.1 -0.05 0.20+0.1 -0.05 1.50±0.1 1.10±0.1 1.50±0.1 0.96 0.48 0.48 0.55±0.05
DESCRIPTION
The UPA808TC contains two NE687 NPN high frequency silicon bipolar chips. NEC's new ultra small TC package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for two stage cascode LNAs and other applications. Note: 1. Operation in excess of any one of these parameters may result in permanent damage. SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 10 VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 65 PT Total Power Dissipation
1 Die mW TBD
2 Die mW TBD
T J Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA808TC-T1, 3K per reel. PART NUMBER UPA808TC PACKAGE OUTLINE TC SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 0.1 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.1 hFE Forward Current Gain1 at VCE = 3 V, IC = 7 mA 70 100 140 fT Gain Bandwidth at VCE = 3 V, IC = 7 mA GHz 9 11 Cre Feedback Capacitance 2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.4 0.8 |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 7 8.5 NF Noise Figure at V CE = 3 V, IC = 7 mA, f = 1 GHz dB 1.3 2 ELECTRICAL CHARACTERISTICS (TA = 25°C)
Frequency: 0.1 to 7.0 GHz Bias: V CE = 0.5 V to 2 V, IC = 0.5 mA to 10 mA Date: 02/01 Note: This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data. Parameters Q1, Q2 Parameters Q1, Q2 IS 8e-17 MJC 0.53 BF 128 XCJC 1 NF 1 CJS 0 VAF1 7 VJS 0.75 IKF 0.18 MJS 0 ISE 3.3e-15 FC 0.37 NE 1.48 TF 8e-12 BR 9.05 XTF 11.9 NR 1.05 VTF 9.55 VAR 4.3 ITF 1.78 IKR 0.009 PTF 69.1 ISC 4e-15 TR 1e-9 NC 1.5 EG 1.11 RE 0.8 XTB 0 RB 11.1 XTI 3 RBM 2.46 KF 0 IRB 0.017 AF 1 RC 7.5 CJE 0.415e-12 VJE 0.68 MJE 0.53 CJC 0.102e-12 VJC 0.29 (1) Gummel-Poon Model BJT NONLINEAR MODEL PARAMETERS (1) UPA808TC
Frequency: 0.1 to 7.0 GHz Bias: V CE = 0.5 V to 2 V, IC = 0.5 mA to 10 mA Date: 02/01 UPA808TC Pin_1 Pin_2 Pin_3 Pin_4 Pin_5 Pin_6 0.07 pF CCEPKG2 CCBPKG2 0.7 nH 0.26 pF CCE2 CCB2 0.26 pF CCE1 0.19 pF 0.95 nH 0.45 nH 0.05 nH 0.8 nH CCBPKG1 CCB1 LE1 LB1 LB 0.05 nH LB 0.05 nH LE C_B2E2 0.05 pF C_B1B2 0.05 pF LB2 LE2 C_C1B2 0.1 pF LC 0.05 nH LC 0.05 nH LE 0.05 nH C_E1C2 C_C1E1 0.05 pF 0.05 pF C_E1B2 0.1 pF 0.1 pF 0.06 pF 0.19 pF EXCLUSIVE NORTH AMERICAN AGENT FOR NEC RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 Internet: http://WWW.CEL.COM 12/11/2001 DATA SUBJECT TO CHANGE WITHOUT NOTICE Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.