UPA805T-T1

UPC805T NEC | Alldatasheet

Document overview

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• PDF pages: 6

Technical content

• Low Noise, High Gain (Unit: mm)
• Operable at Low Voltage
• Small Feed-back Capacitance C re = 0.3 pF TYP.
• Built-in 2 Transistors (2 × 2SC4958)

ORDERING INFORMATION

PART NUMBER QUANTITY PACKING STYLE µPA805T Loose products Embossed tape 8 mm wide. Pin 6 (Q1 (50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. µPA805T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage V CBO 9V Collector to Emitter Voltage V CEO 6V Emitter to Base Voltage V EBO 2V Collector Current I C 10 mA Total Power Dissipation P T 60 in 1 element mW 120 in 2 elements Note Junction Temperature T j 150 ˚C Storage Temperature T stg –65 to +150 ˚C Note 110 mW must not be exceeded in 1 element. µPA805T This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity. The information in this document is subject to change without notice. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD PIN CONFIGURATION (Top View) © 1995 PRELIMINARY DATA SHEET Printed in Japan Document No. ID-3639 (O.D. No. ID-9146) Date Published April 1995 P 2.1±0.1 1.25±0.1 123 654 0.2 –0 +0.1 0.650.65 1.3 2.0±0.2 0.9±0.1 0.7 0~0.1 0.15 –0 +0.1 654 123 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Emitter (Q2) 5. Base (Q2) 6. Base (Q1) XY

µPA805T ELECTRICAL CHARACTERISTICS (T A = 25 °C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector Cutoff Current I CBO VCB = 5 V, I E = 0 0.1 µA Emitter Cutoff Current I EBO VEB = 1 V, I C = 0 0.1 µA DC Current Gain h FE VCE = 3 V, I C = 5 mA Note 1 75 150 Gain Bandwidth Product f T VCE = 3 V, I C = 7 mA, f = 2 GHz 12 GHz Feed-back Capacitance C re VCB = 3 V, I E = 0, f = 1 MHz Note 2 0.3 0.5 pF Insertion Power Gain |S 21|2 VCE = 3 V, I C = 5 mA, f = 2 GHz 7 8.5 dB Noise Figure NF V CE = 3 V, I C = 3 mA, f = 2 GHz 2.5 4 dB hFE Ratio h FE1/hFE2 VCE = 3 V, I C = 5 mA 0.85 A smaller value among h FE of h FE1 = Q1, Q2 A larger value among h FE of h FE2 = Q1, Q2 Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank KB Marking T82 hFE Value 75 to 150 TYPICAL CHARACTERISTICS (T A = 25 °C) 200 100 0 50 100 150 0 0.5 1 V CE = 3 V Ambient Temperature TA (°C) Total Power Dissipation PT (mW) Base to Emitter Voltage VBE (V) Collector Current IC (mA) 40 200 0.1 0 246 500 A 400 A 300 A 200 A I B = 100 A 100 0.5 1 5 10 50 100 5 V VCE = 3 V Collector Current IC (mA) Collector to Emitter Voltage VCE (V) DC Current Gain hFE Collector Current IC (mA) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE DC CURRENT GAIN vs. COLLECTOR CURRENT Free Air 60 mW 120 mW2 Elements in Total Per Element µ µ µ µ µ

µPA805T f = 2 GHz NOISE FIGURE vs. COLLECTOR CURRENT Noise Figure NF (dB) Collector Current IC (mA) VCE = 3 V Collector to Base Voltage VCB (V) Feed-back Capacitance Cre (pF) 0.5 0.4 0.3 0.2 0.1 0.5 2012 5 1 0 0.5 2012 5 1 0 FEED-BACK CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE 0.5 12 51 0 2 0 5 V 3 V VCE = 1 V Collector Current IC (mA) Gain Bandwidth Product fT (GHz) f = 2 GHz Insertion Power Gain l S21e l 2 (dB) Collector Current IC (mA) 0.5 1 5 10 50 202 GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT INSERTION GAIN vs. COLLECTOR CURRENT 5 V 3 V VCE = 1 V f = 2 GHz f = 1 MHz

µPA805T S-PARAMETERS VCE = 3 V, I C = 1 mA, Z O = 50 Ω f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, I C = 3 mA, Z O = 50 Ω f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, I C = 5 mA, Z O = 50 Ω f S11 S21 S12 S22 GHz MAG ANG MAG ANG MAG ANG MAG ANG

µPA805T [MEMO]

µPA805T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11