UPA805T ISC | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscSiliconNPNRFTransistor UPA805T
DESCRIPTION
- WithSOT-363packaging
- Lowvoltage use
- Ultrasuper minimoldpackage
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforusein lownoise andsmallsignalamplifiers from VHFband toUHFband ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 9 V VCEO Collector-EmitterVoltage 6 V VEBO Emitter-BaseVoltage 2 V IC CollectorCurrent-Continuous 10 mA PC CollectorPowerDissipation @TC=25℃ 120 mW TJ Max.JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -60~150 ℃
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscSiliconNPNRFTransistor UPA805T ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified,PulseMeasurementPW≤350µs,DutyCycle≤2% SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO CollectorCutoffCurrent VCB=5V;IE=0 0.1 μA IEBO EmitterCutoffCurrent VEB=1V;IC=0 0.1 μA hFE DCCurrentGain IC=5mA;VCE=3V 90 150 fT Current-Gain—BandwidthProduct IC=7mA;VCE=3V;f=2.0GHz 12 GHz Cre Feed-BackCapacitance IE=0;VCB=3V;f=1.0MHz 0.4 0.5 pF ︱S21e︱2 InsertionPower Gain IC=5mA;VCE=3V;f=2.0GHz 7 9 dB NF NoiseFigure IC=3mA;VCE=3V;f=1.0GHz 2 4.0 dB