UPA804T-T1

UPA804T NEC | Alldatasheet

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Technical content

© 1995 PRELIMINARY DATA SHEET SILICON TRANSISTOR The 2SC4571 has built-in 2 transistors which were developed for UHF.

FEATURES

• High f T fT = 5.0 GHz TYP. (@ V CE = 5 V, I C = 5 mA, f = 1 GHz)
• Small Collector Capacitance Cob = 0.9 pF TYP. (@ V CB = 5 V, I E = 0, f = 1 MHz)
• A surface Mounting Package Adopted
• Built-in 2 Transistors (2 × 2SC4571)

ORDERING INFORMATION

PART NUMBER QUANTITY PACKING STYLE µPA804T Loose products Embossed tape 8 mm wide. Pin 6 (Q1 (50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. µPA804T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage V CBO 20 V Collector to Emitter Voltage V CEO 12 V Emitter to Base Voltage V EBO 3V Collector Current I C 60 mA Total Power Dissipation P T 120 in 1 element mW 160 in 2 elements Note Junction Temperature T j 125 ˚C Storage Temperature T stg –55 to 125 ˚C Note 90 mW must not be exceeded in 1 element. µPA804T PIN CONFIGURATION (Top View) Printed in Japan Document No. ID-3638 (O.D. No. ID-9145) Date Published April 1995 P 2.1±0.1 1.25±0.1 123 654 0.2 –0 +0.1 0.650.65 1.3 2.0±0.2 0.9±0.1 0.7 0~0.1 0.15 –0 +0.1 654 123 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Emitter (Q2) 5. Base (Q2) 6. Base (Q1) XY NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD PACKAGE DRAWINGS (Unit: mm) The information in this document is subject to change without notice.

µPA804T ELECTRICAL CHARACTERISTICS (T A = 25 °C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector Cutoff Current I CBO VCB = 15 V, I E = 0 0.1 µA Emitter Cutoff Current I EBO VEB = 1 V, I C = 0 0.1 µA Collector to Emitter V CE (sat) hFE = 10, I C = 5 mA 0.5 V Saturation Voltage DC Current Gain h FE VCE = 5 V, I C = 5 mA Note 1 60 200 Gain Bandwidth Product (1) f T VCE = 5 V, I C = 5 mA, f = 1 GHz 3 5 GHz Feed-back Capacitance C re VCB = 5 V, I E = 0, f = 1 MHz Note 2 0.9 1.2 pF Insertion Power Gain (1) |S 21|2 VCE = 5 V, I C = 5 mA, f = 1 GHz 5 dB hFE Ratio h FE1/hFE2 VCE = 5 V, I C = 5 mA 0.85 A smaller value among h FE of h FE1 = Q1, Q2 A larger value among h FE of h FE2 = Q1, Q2 Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank FB GB Marking T76 T77 hFE Value 60 to 120 100 to 200 TYPICAL CHARACTERISTICS (T A = 25 °C) 50 100 150 Total Power Dissipation PT (mW) Ambient Temperature TA (°C) 120 mW 160 mW 100 150 Free Air PT–TA Characteristics VCE = 5 V Collector Current IC (mA) IC–VBE Characteristics Base to Emitter Voltage VBE (V) Per Element

2 Elements in Total

µPA804T 0.5 Gain Bandwidth Product fT (GHz) Collector Current IC (mA) fT|IC Characteristics f = 1 GHz 1 3 7 10 30 50 100 0.5 Insertion Power Gain l S21e l 2 (dB) Collector Current IC (mA) l S21e l 2 – IC Characteristics f = 1 GHz 12 5 1 0 2 0 5 0 Collector Current IC (mA) Collector to Emitter Voltage VCE (V) IC–VCE Characteristics 2468 1 0 DC Current Gain hFE Collector Current IC (mA) hFE|IC Characteristics 100 200 60 µA 80 µA 100 µA 0.5 1 2 5 10 20 50 VCE = 5 V 40 µA IB = 120 µA VCE = 5 V 3 V 3 V VCE = 5 V 0.1 Frequency f (GHz) 3 V Collector Capacitance Cob (pF) Collector to Base Voltage VCB (V) Cob – VCB Characteristics 0.1 0.2 0.5 0.7 2.0 25 7 1 0 2 0 Insertion Power Gain l S21e l 2 (dB) l S21e l 2 – f Characteristics 1.0 f = 1 MHzIC = 5 mA 20 µA VCE = 5 V

µPA804T S-PARAMETERS VCE = 5 V, I C = 5 mA, Z O = 50 Ω FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG VCE = 5 V, I C = 3 mA, Z O = 50 Ω FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG

µPA804T S-PARAMETERS VCE = 5 V, I C = 1 mA, Z O = 50 Ω FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, I C = 5 mA, Z O = 50 Ω FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG

µPA804T S-PARAMETERS VCE = 3 V, I C = 3 mA, Z O = 50 Ω FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, I C = 1 mA, Z O = 50 Ω FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG

µPA804T [MEMO]

µPA804T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 [MEMO]