UPA802T-T1

UPA802T NEC | Alldatasheet

Document overview

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Technical content

The µPA802T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band.

FEATURES

• Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, V CE = 3 V, I C = 7 mA
• High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, V CE = 3 V, I C = 7 mA
• A Mini Mold Package Adopted
• Built-in 2 Transistors (2 × 2SC4227)

ORDERING INFORMATION

PART NUMBER QUANTITY PACKING STYLE µPA802T Loose products Embossed tape 8 mm wide. Pin 6 (Q1 (50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation side of the tape. µPA802T-T1 Taping products (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage V CBO 20 V Collector to Emitter Voltage V CEO 10 V Emitter to Base Voltage V EBO 1.5 V Collector Current I C 65 mA Total Power Dissipation P T 150 in 1 element mW 200 in 2 elements Note Junction Temperature T j 150 ˚C Storage Temperature T stg –65 to +150 ˚C Note 110 mW must not be exceeded in 1 element. µPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD PIN CONFIGURATION (Top View) © 1995 PRELIMINARY DATA SHEET Printed in Japan Document No. ID-3636 (O.D. No. ID-9143) Date Published April 1995 P The information in this document is subject to change without notice. PACKAGE DRAWINGS (Unit: mm) 2.1±0.1 1.25±0.1 123 654 0.2 –0 +0.1 0.650.65 1.3 2.0±0.2 0.9±0.1 0.7 0~0.1 0.15 –0 +0.1 654 123 PIN CONNECTIONS 1. Collector (Q1) 2. Emitter (Q1) 3. Collector (Q2) 4. Emitter (Q2) 5. Base (Q2) 6. Base (Q1) XY

µPA802T ELECTRICAL CHARACTERISTICS (T A = 25 °C) PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT Collector Cutoff Current I CBO VCB = 10 V, I E = 0 0.8 µA Emitter Cutoff Current I EBO VEB = 1 V, I C = 0 0.8 µA DC Current Gain h FE VCE = 3 V, I C = 7 mA Note 1 70 240 Gain Bandwidth Product f T VCE = 3 V, I C = 7 mA, f = 1 GHz 4.5 7.0 GHz Feed-back Capacitance C re VCB = 3 V, I E = 0, f = 1 MHz Note 2 0.9 pF Insertion Power Gain |S 21|2 VCE = 3 V, I C = 7 mA, f = 1 GHz 10 12 dB Noise Figure NF V CE = 3 V, I C = 7 mA, f = 1 GHz 1.4 1.7 dB hFE Ratio h FE1/hFE2 VCE = 3 V, I C = 7 mA 0.85 A smaller value among h FE of h FE1 = Q1, Q2 A larger value among h FE of h FE2 = Q1, Q2 Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 % 2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank FB GB Marking R34 R35 hFE Value 70 to 150 110 to 240 TYPICAL CHARACTERISTICS (T A = 25 °C) 0.5 0.5 1.0 0 0.5 1.0 1 5 10 50 100 200 VCE = 3 V VCE = 3 V PT - TA Characteristics 100 0 50 100 150 200 Total Power Dissipation PT (mW) Ambient Temperature TA (°C) Free Air

2 Elements in Total

Collector Current IC (mA) Base to Emitter Voltage VBE (V) IC - VBE Characteristics Collector to Emitter Voltage VCE (V) Collector Current IC (mA) Collector Current IC (mA) DC Current Gain hFE hFE - IC Characteristics IC - VCE Characteristics

160 A µ

140 Aµ 120 Aµ 100 Aµ 80 Aµ 60 Aµ 40 Aµ IB = 20 A µ

µPA802T 0.5 0.5 1 5 10 50 0.1 1.0 0.5 5.0 1.0 5.0 10 50 V CE = 3 V f = 1 GHz VCE = 3 V IC = 7 mA VCE = 3 V f = 1 GHz 0.2 2.0 Insertion Power Gain l S21e l 2 (dB) Collector Current IC (mA) Frequency f (GHz) Insertion Power Gain l S21e l 2 (dB) Collector Current IC (mA) Noise Figure NF (dB) l S21e l 2 - IC Characteristics l S 21e l 2 - f Characteristics NF - IC Characteristics 0.1 0.52 5 10 20 50 0.2 0.5 1.0 2.0 5.0 1.0 5.0 10 50 f = 1 MHz V CE = 3 V f = 1 GHz Cre - VCB Characteristics Collector to Base Voltage VCB (V) Feed-back Capacitance Cre (pF) Gain Bandwidth Product fT (GHz) Collector Current IC (mA) fr - IC Characteristics

µPA802T S-PARAMETERS VCE = 3 V, I C = 7 mA, Z O = 50 Ω FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, I C = 5 mA, Z O = 50 Ω FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG VCE = 3 V, I C = 3 mA, Z O = 50 Ω FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG

µPA802T VCE = 3 V, I C = 1 mA, Z O = 50 Ω FREQUENCY S11 S21 S12 S22 MHz MAG ANG MAG ANG MAG ANG MAG ANG

µPA802T [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11