UPA801T ISC | Alldatasheet
Document overview
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Technical content
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark1 iscSiliconNPNRFTransistor UPA801T
DESCRIPTION
- WithSOT-363packaging
- Lowvoltage use
- Ultrasuper minimoldpackage
- Minimum Lot-to-Lotvariationsforrobustdevice performanceandreliable operation
APPLICATIONS
- Designedforusein lownoise andsmallsignalamplifiers from VHFband toUHFband ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-BaseVoltage 20 V VCEO Collector-EmitterVoltage 12 V VEBO Emitter-BaseVoltage 2.5 V IC CollectorCurrent-Continuous 100 mA PC CollectorPowerDissipation @TC=25℃ 150 mW TJ Max.JunctionTemperature 150 ℃ Tstg StorageTemperatureRange -60~150 ℃
iscwebsite：www.iscsemi.cn isc & iscsemi isregisteredtrademark2 iscSiliconNPNRFTransistor UPA801T ELECTRICALCHARACTERISTICS TC=25℃ unlessotherwisespecified,PulseMeasurementPW≤350µs,DutyCycle≤2% SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT ICBO CollectorCutoffCurrent VCB=10V;IE=0 0.1 μA IEBO EmitterCutoffCurrent VEB=1V;IC=0 0.1 μA hFE DCCurrentGain IC=7mA;VCE=3V 90 250 fT Current-Gain—BandwidthProduct IC=7mA;VCE=3V;f=1GHz 4.5 GHz Cre Feed-BackCapacitance IE=0;VCB=10V;f=1.0MHz 0.65 pF ︱S21e︱2 InsertionPower Gain IC=7mA;VCE=3V;f=1.0GHz 11 dB NF NoiseFigure IC=7mA;VCE=3V;f=1.0GHz 1.4 2.0 dB