UPA800TF NEC | Alldatasheet
Document overview
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- PDF pages: 1
Technical content
- SMALL PACKAGE STYLE: SOT-363 package measures just 2.0 mm x 1.25 mm
- LOW HEIGHT PROFILE: Just 0.60 mm high
- EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE FEATURES OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE TS06 (Top View)
DESCRIPTION
The UPA800TF contains two NE680 NPN high frequency silicon bipolar chips. NEC's new low profile TF package is ideal for all portable wireless applicatons where reducing compo- nent height is a prime consideration. Each transistor chip is independently mounted and easily configured for two stage cascade LNAs and other similar applications. PART NUMBER UPA800TF PACKAGE OUTLINE TS06 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 1.0 IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 1.0 hFE Forward Current Gain1 at VCE = 3 V, IC = 5 mA 80 120 200 fT Gain Bandwidth at VCE = 3 V, IC = 5 mA GHz 5.5 8.0 Cre Feedback Capacitance 2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.3 0.7 |S21E|2 Insertion Power Gain at VCE = 3 V, IC = 5 mA, f = 2 GHz dB 5.5 7.5 NF Noise Figure at V CE = 3 V, IC = 5 mA, f = 2 GHz dB 1.9 3.2 ELECTRICAL CHARACTERISTICS (TA = 25°C) Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use part number UPA800TF-T1, 3K per reel. PIN OUT 1. Collector Transistor 1 2. Emitter Transistor 1 3. Collector Transistor 2 4. Emitter Transistor 2 5. Base Transistor 2 6. Base Transistor 1 California Eastern Laboratories 2.1 ± 0.1 1.25 ± 0.1 0 ~ 0.1 0.13 ±0.05 0.6 ± 0.1 0.45 2.0 ± 0.2 0.65 1.3 3 4 (All Leads)0.22 +0.10 - 0.05 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. SYMBOLS PARAMETERS UNITS RATINGS V CBO Collector to Base Voltage V 20 VCEO Collector to Emitter Voltage V 10 VEBO Emitter to Base Voltage V 1.5 IC Collector Current mA 35 PT Total Power Dissipation
1 Die mW 110
2 Die mW 200
TJ Junction Temperature °C 150 TSTG Storage Temperature °C -65 to +150 ABSOLUTE MAXIMUM RATINGS 1 (TA = 25°C) EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 2/99DATA SUBJECT TO CHANGE WITHOUT NOTICE Note: Pin 1 is the lower left most pin as the package lettering is oriented and read left to right.