UPA679TB

UPA679TB NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR µµµµ PA679TB N/P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. G16615EJ1V0DS00 (1st edition) Date Published February 2003 NS CP(K) Printed in Japan 2003

DESCRIPTION

The µ PA679TB is a switching device, which can be driven directly by a 2.5 V power source. The µ PA679TB features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

FEATURES

• 2.5 V drive available
• Low on-state resistance N-ch R DS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A) RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A) P-ch R DS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.20 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
• Two MOS FET circuits in same size package as SC-70

ORDERING INFORMATION

µ PA679TB SC-88 (SSP) Marking: YA ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 20 / −20 V Gate to Source Voltage (VDS = 0 V) V GSS ±12 / m12 V Drain Current (DC) I D(DC) ±0.35 / m0.25 A Drain Current (pulse) Note1 ID(pulse) ±1.40 / m1.00 A Total Power Dissipation (2 units) Note2 PT 0.2 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 2500 mm2 x 1.1 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with caution for electrostatic discharge. V ESD = ±±±±100 V TYP. (C = 200 pF, R = 0 ΩΩΩΩ, Single pulse) PACKAGE DRAWING (Unit: mm) 0.2 +0.1 -0 0.15 +0.1 -0.05 2.1 ±0.1 1.25 ±0.1 0.65 1.3 0.7 2.0 ±0.2 0.9 ±0.1 0 to 0.1 0.65 PIN CONNECTION (Top View) 654 123 Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1

µµµµ PA679TB

ELECTRICAL CHARACTERISTICS

(1) N-ch PART (TA = 25°°°°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS VDS = 20.0 V, VGS = 0 V 1.0 µA Gate Leakage Current I GSS VGS = ±12.0 V, VDS = 0 V ±10 µA Gate Cut-off Voltage Note Forward Transfer Admittance Note | yfs |V DS = 10.0 V, ID = 0.30 A 0.25 0.75 S Drain to Source On-state Resistance Note RDS(on)1 VGS = 4.5 V, ID = 0.30 A 0.38 0.57 Ω RDS(on)2 VGS = 4.0 V, ID = 0.30 A 0.41 0.60 Ω RDS(on)3 VGS = 2.5 V, ID = 0.15 A 0.60 0.88 Ω Input Capacitance C iss VDS = 10.0 V 28 pF Output Capacitance C oss VGS = 0 V 11 pF Reverse Transfer Capacitance C rss f = 1.0 MHz 7 pF Turn-on Delay Time t d(on) VDD = 10.0 V, ID = 0.30 A 20 ns Rise Time t r VGS = 4.0 V 51 ns Turn-off Delay Time t d(off) RG = 10 Ω 94 ns Fall Time t f 87 ns Body Diode Forward Voltage V F(S-D) IF = 0.35 A, VGS = 0 V 0.84 V Note Pulsed: PW ≤ 350 µs, Duty cycle ≤ 2% TEST CIRCUIT SWITCHING TIME PG. RG VGS D.U.T. RL VDD τ = 1 sµ Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%

Data Sheet G16615EJ1V0DS 3 µµµµ PA679TB (2) P-ch PART (TA = 25°°°°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS VDS = −20.0 V, VGS = 0 V −1.0 µA Gate Leakage Current I GSS VGS = m12.0 V, VDS = 0 V m10 µA Gate Cut-off Voltage Note Forward Transfer Admittance Note | yfs |V DS = −10.0 V, ID = −0.20 A 0.2 0.6 S Drain to Source On-state Resistance Note RDS(on)1 VGS = −4.5 V, ID = −0.20 A 1.17 1.45 Ω RDS(on)2 VGS = −4.0 V, ID = −0.20 A 1.25 1.55 Ω RDS(on)3 VGS = −2.5 V, ID = −0.15 A 2.25 2.98 Ω Input Capacitance C iss VDS = −10.0 V 29 pF Output Capacitance C oss VGS = 0 V 15 pF Reverse Transfer Capacitance C rss f = 1.0 MHz 3 pF Turn-on Delay Time t d(on) VDD = −10.0 V, ID = −0.20 A 23 ns Rise Time t r VGS = −4.0 V 39 ns Turn-off Delay Time t d(off) RG = 10 Ω 50 ns Fall Time t f 33 ns Body Diode Forward Voltage V F(S-D) IF = 0.25 A, VGS = 0 V 0.88 V Note Pulsed: PW ≤ 350 µs, Duty cycle ≤ 2% TEST CIRCUIT SWITCHING TIME PG. RG VGS(−) D.U.T. RL VDD τ = 1 sµ Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS(−) VDS(−) 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%

µµµµ PA679TB TYPICAL CHARACTERISTICS (1) N-ch PART (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5 TA - Ambient Temperature - °C PT - Total Power Dissipation - W 0.04 0.08 0.12 0.16 0.2 0.24 0 25 50 75 100 125 150 175Mounted on FR-4 board of 2500 mm 2 x 1.1 mm 2 units total TA - Ambient Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 0.2 0.4 0.6 0.8 1.2 1.4 0 0.4 0.8 1.2 1.6 Pulsed VGS = 4.5 V 4.0 V 2.5 V VDS - Drain to Source Voltage - V ID - Drain Current - A 0.0001 0.001 0.01 0.1 00 . 511 . 522 . 53 VDS = 10.0 V Pulsed TA = 125 °C 75°C 25°C −25°C VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate Cut-off Voltage - V 0.4 0.6 0.8 1.2 1.4 - 50 0 50 100 150 VDS = 10.0 V ID = 1.0 mA Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S 0.01 0.1 0.001 0.01 0.1 1 10 TA = −25°C 25°C 75°C 125 °C VDS = 10.0 V Pulsed ID - Drain Current - A

Data Sheet G16615EJ1V0DS 5 µµµµ PA679TB DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - Ω 0.2 0.4 0.6 0.8 1.2 - 50 0 50 100 150 Pulsed VGS = 2.5 V, I D = 0.15 A VGS = 4.5 V, I D = 0.30 A VGS = 4.0 V, I D = 0.30 A Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - Ω 0.2 0.4 0.6 0.8 1.2 02468 1 0 1 2 ID = 0.30 A Pulsed VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω 0.2 0.4 0.6 0.8 1.2 0.01 0.1 1 10 VGS = 4.5 V Pulsed TA = 125°C 75°C 25°C −25°C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - Ω 0.2 0.4 0.6 0.8 1.2 0.01 0.1 1 10 VGS = 4.0 V Pulsed TA = 125°C 75°C 25°C −25°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - Ω 0.2 0.4 0.6 0.8 1.2 0.01 0.1 1 10 25°C −25°C TA = 125°C 75°C VGS = 2.5 V Pulsed ID - Drain Current - A Ciss, Coss, Crss - Capacitance - pF 100 0.1 1 10 100 VGS = 0 V f = 1.0 MHz C iss C oss C rss VDS - Drain to Source Voltage - V

µµµµ PA679TB SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE td(on), tr, td(off), tf - Switching Time - ns 100 1000 0.01 0.1 1 10 VDD = 10.0 V VGS = 4.0 V RG = 10 Ω td(off) td(on) tf tr ID - Drain Current - A IF - Diode Forward Current - A 0.001 0.01 0.1 VGS = 0 V Pulsed VF(S-D) - Source to Drain Voltage - V

Data Sheet G16615EJ1V0DS 7 µµµµ PA679TB (2) P-ch PART (T A = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5 TA - Ambient Temperature - °C PT - Total Power Dissipation - W 0.04 0.08 0.12 0.16 0.2 0.24 0 25 50 75 100 125 150 175Mounted on FR-4 board of 2500 mm 2 x 1.1 mm 2 units total TA - Ambient Temperature - °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A - 0.2 - 0.4 - 0.6 - 0.8 - 1 Pulsed −2.5 V VGS = −4.5 V −4.0 V VDS - Drain to Source Voltage - V ID - Drain Current - A -0.0001 -0.001 -0.01 -0.1 -10 0 - 1- 2- 3- 4 VDS = −10.0 V Pulsed TA = 125 °C 75°C 25°C −25°C VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate Cut-off Voltage - V - 0.6 - 0.8 - 1 - 1.2 - 1.4 - 1.6 -50 0 50 100 150 VDS = −10.0 V ID = −1.0 mA Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S 0.01 0.1 TA = −25°C 25°C 75°C 125 °C VDS = −10.0 V Pulsed ID - Drain Current - A

µµµµ PA679TB DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - Ω -50 0 50 100 150 Pulsed VGS = −2.5 V, ID = −0.15 A VGS = −4.0 V, ID = −0.20 A VGS = −4.5 V, ID = −0.20 A Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - Ω 0 - 2 - 4 - 6 - 8 - 10 - 12 ID = −0.20 A Pulsed VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - Ω VGS = −4.5 V Pulsed −25°C 25°C 75°C TA = 125 °C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - Ω VGS = −4.0 V Pulsed −25°C 25°C 75°C TA = 125 °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - Ω VGS = −2.5 V Pulsed TA = 125 °C 75°C 25°C −25°C ID - Drain Current - A Ciss, Coss, Crss - Capacitance - pF 100 - 0.1 - 1 - 10 - 100 VGS = 0 V f = 1.0 MHz C iss C oss C rss VDS - Drain to Source Voltage - V

Data Sheet G16615EJ1V0DS 9 µµµµ PA679TB SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE td(on), tr, td(off), tf - Switching Time - ns 100 1000 -0.01 -0.1 -1 -10 VDD = −10.0 V VGS = −4.0 V RG = 10 Ω td(off) td(on) tf tr ID - Drain Current - A IF - Diode Forward Current - A 0.001 0.01 0.1 VGS = 0 V Pulsed VF(S-D) - Source to Drain Voltage - V

µµµµ PA679TB The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer- designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1