UPA675T

UPA675T NEC | Alldatasheet

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© 2001 MOS FIELD EFFECT TRANSISTOR µ PA675T N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DATA SHEET Document No. G15454EJ1V0DS00 (1st edition) Date Published May 2001 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. PIN CONNECTION 654 123 Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 (S1) (G1) (D2) (S2) (G2) (D1)

DESCRIPTION

The µ PA675T is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.

FEATURES

• Two MOS FET circuits in package the same size as SC-70
• Automatic mounting supported
• Gate can be driven by a 1.5 V power source
• Because of its high input impedance, there’s no need to consider a drive current
• Since bias resistance can be omitted, the number of components required can be reduced

ORDERING INFORMATION

µ PA675T Note SC-88 (SSP) Note Marking: SA ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 16 V Gate to Source Voltage (VDS = 0 V) V GSS ±7.0 V Drain Current (DC) (Tc = 25°C) I D(DC) ±0.1 A Drain Current (pulse) Note ID(pulse) ±0.2 A Total Power Dissipation (TC = 25°C) P T 0.2 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to +150 °C Note PW ≤ 10 ms, Duty Cycle ≤ 50% PACKAGE DRAWING (Unit: mm) 0.2 +0.1 -0 0.15 +0.1 -0.05 2.1 ±0.1 1.25 ±0.1 0.65 1.3 0.7 2.0 ±0.2 0.9 ±0.1 0 to 0.1 0.65

µµµµ PA675T ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS VDS = 16 V, VGS = 0 V 1.0 µA Gate Leakage Current I GSS VGS = ±7.0 V, VDS = 0 V ±3.0 µA Gate Cut-off Voltage V GS(off) VDS = 3 V, ID = 10 µA 0.5 0.8 1.1 V Forward Transfer Admittance | y fs |V DS = 3 V, ID = 10 mA 20 mS Drain to Source On-state Resistance R DS(on)1 VGS = 1.5 V, ID = 1 mA 20 50 Ω RDS(on)2 VGS = 2.5 V, ID = 10 mA 7 15 Ω RDS(on)3 VGS = 4.0 V, ID = 10 mA 5 12 Ω Input Capacitance C iss VDS = 3 V 10 pF Output Capacitance C oss VGS = 0 V 13 pF Reverse Transfer Capacitance C rss f = 1 MHz 3 pF Turn-on Delay Time t d(on) VDD = 3 V, ID = 10 mA 15 ns Rise Time t r VGS = 3 V 70 ns Turn-off Delay Time t d(off) RG = 10 Ω 100 ns Fall Time t f 110 ns SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS PG. RG VGS DUT RL VDD τ = 1 sµ Duty Cycle ≤ 1% Gate Voltage Wave- form Drain Current Wave- form VGS 10% 90%VGS 10% ID 90% 90% td(on) tr td(off) tf 10% τ ID ton toff

Data Sheet G15454EJ1V0DS 3 µµµµ PA675T TYPICAL CHARACTERISTICS (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - mA VDS - Drain to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - mS ID - Drain Current - mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT R DS(on) - Drain to Source On-state Resistance - Ω ID - Drain Current - mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT R DS(on) - Drain to Source On-state Resistance - Ω ID - Drain Current - mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT R DS(on) - Drain to Source On-state Resistance - Ω ID - Drain Current - mA 0 2345 1.2 V 1.8 V 1.6 V 1.4 V VGS = 2.0 V 500 VDS = 3 V 10 20 50 200 TA = –25˚C200 100 100 25˚C 75˚C 0.5 200 12 5 2 0 100 10 50 100 200 500 TA = –25˚C VGS = 1.5 V 2.5 V 4.0 V 0.5 200 12 5 2 0 100 10 50 100 200 500 TA = 25˚C VGS = 1.5 V 2.5 V 4.0 V 0.5 200 12 5 2 0 100 10 50 100 200 500 TA = 75˚C VGS = 1.5 V 2.5 V 4.0 V TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TC - Ambient Temperature - ˚C PT - Total Power Dissipation - mW 0 100 1257525 150 200 300 Free air 250 150 100 TotalPer one unit

µµµµ PA675T DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE R DS(on) - Drain to Source On-state Resistance - Ω VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE R DS(on) - Drain to Source On-state Resistance - Ω VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE R DS(on) - Drain to Source On-state Resistance - Ω VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Diode Forward Current - mA VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE C iss, Crss, Coss, - Capacitance - pF VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns ID - Drain Current - mA 0 234 7 TA = –25˚C ID = 10 mA 1 mA 0 234 7 TA = 25˚C ID = 10 mA 1 mA 0 234 7 TA = 75˚C ID = 10 mA 1 mA 200 0 1.0 100 0.80.60.40.2 0.5 2 5 10 50 VGS = 0 V f = 1 MHz C oss C iss C rss 500 10 50 100 500 200 200 VDD = 3 V VGS = 3 V 100 tr tf td(on) td(off)

Data Sheet G15454EJ1V0DS 5 µµµµ PA675T [MEMO]

µµµµ PA675T [MEMO]

Data Sheet G15454EJ1V0DS 7 µµµµ PA675T [MEMO]

µµµµ PA675T M8E 00. 4 The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).