UPA672

UPA672T NEC | Alldatasheet

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© 1996 DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA672T N-CHANNEL MOS FET ARRAY FOR SWITCHING The µPA672T is a super-mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs.

FEATURES

• Two MOS FET circuits in package the same size as SC-70
• Automatic mounting supported ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT Drain to Source Voltage V DSS 50 V Gate to Source Voltage V GSS ±7.0 V Drain Current (DC) I D(DC) 100 mA Drain Current (pulse) I D(pulse) PW ≤ 10 ms, Duty Cycle ≤ 50 % 200 mA Total Power Dissipation P T 200 (Total) mW Channel Temperature T ch 150 ˚C Storage Temperature T stg –55 to +150 ˚C Document No. G11259EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan PACKAGE DIMENSIONS (in millimeters) 0.2 +0.1 –0 0.15 +0.1 –0.05 2.1 ±0.1 1.25 ±0.1 0.65 1.3 0.7 2.0 ±0.2 0.9 ±0.1 0 to 0.1 0.65 PIN CONNECTION 654 123 Marking: MA Source 1 Gate 1 Drain 2 Source 2 Gate 2 Drain 1 (S1) (G1) (D2) (S2) (G2) (D1)

µPA672T ELECTRICAL CHARACTERISTICS (T A = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current I DSS VDS = 50 V, VGS = 0 10 µA Gate Leakage Current I GSS VGS = ±7.0 V, VDS = 0 ±5.0 µA Forward Transfer Admittance |y fs|V DS = 3.0 V, ID = 10 mA 20 mS Drain to Source On-State ResistanceR DS(on)1 VGS = 2.5 V, ID = 10 mA 20 40 Ω Drain to Source On-State ResistanceR DS(on)2 VGS = 4.0 V, ID = 10 mA 15 20 Ω Input Capacitance C iss VDS = 3.0 V, VGS = 0, f = 1.0 MHz 6 pF Output Capacitance C oss 8p F Reverse Transfer Capacitance C rss 1.2 pF Turn-On Delay Time t d(on) VDD = 3 V, ID = 20 mA, VGS(on) = 3 V, 9 ns Rise Time t r R G = 10 Ω , RL = 120 Ω 50 ns Turn-Off Delay Time t d(off) 20 ns Fall Time t f 40 ns SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS DUT PG. R G VGS τ µτ = 1 s Duty Cycle ≤ 1 % R L VDD VGS ID VGS(on) 10 % 90 % 90 % 90 % 10 %10 % ID td(on) ton toff tr td(off) tf Gate voltage waveform Drain current waveform

µPA672T TYPICAL CHARACTERISTICS (T A = 25 ˚C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW TA - Ambient Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - mA VDS - Drain to Source Voltage - V TRANSFER CHARACTERISTICS ID - Drain Current - mA VGS - Gate to Source Voltage - V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - mS ID - Drain Current - mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT R DS(on) - Drain to Source On-State Resistance - Ω ID - Drain Current - mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT R DS(on) - Drain to Source On-State Resistance - Ω ID - Drain Current - mA 300 0 50 75 150 250 200 150 100 100 125 Free air Per one unitTotal 100 0 2345 4.0 V 3.5 V 3.0 V 2.5 V VGS = 2.0 V 100 0.1 0.01 0.001 VDS = 3 V 123 TA = 75 ˚C 25 ˚C –25 ˚C 100 1 100 VDS = 3 V 2 5 10 20 50 125 ˚C TA = –25 ˚C 25 ˚C 100 1 100 VGS = 2.5 V 2 5 10 20 50 TA = 75 ˚C 25 ˚C –25 ˚C 100 1 100 VGS = 4 V 2 5 10 20 50 TA = 75 ˚C 25 ˚C –25 ˚C

µPA672T DRAIN TO SOURCE ON-STAGE RESISTANCE vs. GATE TO SOURCE VOLTAGE R DS(on) - Drain to Source On-State Resistance - Ω VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE C iss, Coss, Crss, - Capacitance - pF VDS - Drain to Source Voltage - V td(on), tr, td(off), tr - Switching Time - ns ID - Drain Current - mA ISD - Source to Drain Current - mA VSD - Source to Drain Voltage - V SWITCHING CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE ID = 10 mA 1 23456 ID = 1 mA 10 mA 50 mA 100 VGS = 0 f = 1 MHz 0.5 0.2 0.1 1 5 10 20 50 C iss C oss C rss 100 1000 VDD = 3 V VGS(on) = 3 V R G = 10 Ω 1 50 100 200 500 tr tf td(off) td(on) 100 1.00.6 0 0.2 0.4 0.8

µPA672T REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E

µPA672T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard : Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special : Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific : Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11