UPA654TT RENESAS | Alldatasheet
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.
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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR μPA654TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. G17765EJ1V0DS00 (1st edition) Date Published October 2005 NS CP(K) Printed in Japan 2005
DESCRIPTION
The μPA654TT is a switching device, wh ich can be driven directly by a
1.8 V power source, and it is suitable for applications such as power switch
of portable equipment and so on.
FEATURES
- 1.8 V drive available
- Low on-state resistance R DS(on)1 = 88 mΩ MAX. (VGS = −4.5 V, ID = −1.5 A) R DS(on)2 = 133 mΩ MAX. (VGS = −2.5 V, ID = −1.5 A) R DS(on)3 = 234 mΩ MAX. (VGS = −1.8 V, ID = −1.0 A)
ORDERING INFORMATION
μPA654TT-E1-A μPA654TT-E2-A 6pinWSOF (1620) Marking: WH Remark “-A”indicates Pb-free (This product does not contain Pb in external electrode and other parts.). “-E1”, “-E2”indicates the unit orientation. (8 mm embossed carrier tape, 3000 pcs/reel) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS −12 V Gate to Source Voltage (VDS = 0 V) V GSS m8.0 V Drain Current (DC) Note1 ID(DC) m2.5 A Drain Current (pulse) Note2 ID(pulse) m10 A Total Power Dissipation 1 PT1 0.2 W Total Power Dissipation 2 Note1 PT2 1.3 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C Notes 1. Mounted on FR-4 board of 5000 mm2 x 1.1 mm, t ≤ 5 sec. 2. PW ≤ 10 μs, Duty Cycle ≤ 1% Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally requi red if a voltage exc eeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 0.05 S 2.0±0.2 0.4±0.1 0.25±0.1 2.1±0.1 1.6 0.65 0.65 0~0.05 S MAX. 0.8 0.15+0.1 −0.05 0.2+0.1 −0.05 0.1 SM 56 4 31 2 1,2,5,6 : Drain 3 : Gate 4 : Source EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain
μPA654TT ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −12 V, VGS = 0 V −10 μA Gate Leakage Current IGSS VGS = m8.0 V, VDS = 0 V m10 μA Gate Cut-off Voltage VGS(off) VDS = −10 V, ID = −1.0 mA −0.45 −0.75 −1.5 V Forward Transfer Admittance | yfs | VDS = −10 V, ID = −1.5 A 1.0 4.7 S Drain to Source On-state Resistance R DS(on)1 VGS = −4.5 V, ID = −1.5 A 70 88 m Ω R DS(on)2 VGS = −2.5 V, ID = −1.5 A 100 133 m Ω R DS(on)3 VGS = −1.8 V, ID = −1.0 A 140 234 m Ω Input Capacitance Ciss VDS = −10 V 250 pF Output Capacitance Coss VGS = 0 V 83 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 40 pF Turn-on Delay Time td(on) VDD = −6.0 V, ID = −1.5 A 16 ns Rise Time tr VGS = −4.0 V 90 ns Turn-off Delay Time td(off) RG = 10 Ω 173 ns Fall Time tf 138 ns Total Gate Charge QG VDD = −10 V 2.7 nC Gate to Source Charge QGS VGS = −4.0 V 0.5 nC Gate to Drain Charge QGD ID = −2.5 A 0.8 nC Body Diode Forward Voltage VF(S-D) IF = 2.5 A, VGS = 0 V 0.87 V TEST CIRCUIT 2 GATE CHARGETEST CIRCUIT 1 SWITCHING TIME PG. RG VGS (−) D.U.T. RL VDD τ = 1 sμ Duty Cycle ≤ 1% τ PG. 50 Ω D.U.T. RL VDD IG = −2 mA VGS Wave Form VDS Wave Form VGS (−) VDS (−) 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% VGS Wave Form VDS Wave Form VGS (−) VDS (−) 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%
μPA654TT TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C P T - Total Power Dissipation - W 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 25 50 75 100 125 150 175 Mounted on FR-4 board of 5000 mm 2 x 1.1 mm, t ≤ 5 sec. TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA I D - Drain Current - A -0.01 -0.1 -10 -100 -0.1 -1 -10 -100 ID(pulse) ID(DC) RDS(on) Limited (VGS = −4.5 V) Single Pulse Mounted on FR-4 board of 5000 mm2 x 1.1 mm PW = 1 m s10 ms100 ms 5 sec VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH r th(ch-A) - Transient Thermal Resistance - °C/W 100
1000 Single Pulse
5000 mm2 x 1.1 mm PW - Pulse Width - s 1 m 10 m 100 m 1 10 100 1000
μPA654TT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS I D - Drain Current - A - 2 - 4 - 6 - 8 - 10 Pulsed −2.5 V VGS = −4.5 V −3.0 V −1.8 V VDS - Drain to Source Voltage - V I D - Drain Current - A - 0.00001 - 0.0001 - 0.001 - 0.01 - 0.1 - 1 - 10 VDS = −10 V Pulsed T A = 125°C 75°C 25°C −25°C VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT V GS(off) - Gate Cut-off Voltage - V - 0.4 - 0.5 - 0.6 - 0.7 - 0.8 - 0.9 - 1 -50 0 50 100 150 VDS = −10 V ID = −1.0 mA Tch - Channel Temperature - °C | y fs | - Forward Transfer Admittance - S 0.01 0.1 VDS = −10 V Pulsed TA = −25°C 25°C 75°C 125°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 100 150 200 -50 0 50 100 150 VGS = −1.8 V, ID = −1.0 A Pulsed VGS = −2.5 V, ID = −1.5 A VGS = −3.0 V, ID = −1.5 A VGS = −4.5 V, ID = −1.5 A Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ 100 150 200 0- 2 - 4 - 6 - 8 Pulsed ID = −1.5 A VGS - Gate to Source Voltage - V
μPA654TT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 100 150 200 VGS = −4.5 V Pulsed TA = 125°C 75°C 25°C −25°C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 100 150 200 VGS = −2.5 V Pulsed 25°C −25°C TA = 125°C 75°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT SWITCHING CHARACTERISTICS RDS(on) - Drain to Source On-state Resistance - mΩ 100 150 200 250 VGS = −1.8 V Pulsed 25°C −25°C TA = 125°C 75°C ID - Drain Current - A t d(on), tr, td(off), tf - Switching Time - ns 100 1000 -0.1 -1 -10 td(off ) td(on) tf tr VDD = −6.0 V VGS = −4.0 V RG = 10 Ω ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRA IN DIODE FORWARD VOLTAGE C iss, Coss, Crss - Capacitance - pF 100 1000 -0.1 -1 -10 -100 VGS = 0 V f = 1.0 MHz Crss Ciss Coss ID - Drain Current - A IF - Diode Forward Current - A 0.01 0.1 0.4 0.6 0.8 1 1.2 Pulsed VGS = 0 V VF(S-D) - Source to Drain Voltage - V
μPA654TT DYNAMIC INPUT CHARACTERISTICS V GS - Gate to Source Voltage - V ID = −2.5 A VDD = −6.0 V −10 V Q G - Gate Change - nC
μPA654TT The information in this document is current as of October, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer- designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) M8E 02. 11-1 (1) (2) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "Standard": "Special": "Specific":