UPA652TT

UPA652TT RENESAS | Alldatasheet

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR µµ µµPA652TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. G16204EJ1V0DS00 (1st edition) Date Published September 2002 NS CP(K) Printed in Japan © 2002

DESCRIPTION

The µPA652TT is a switching device, which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

FEATURES

• 2.5 V drive available
• Low on-state resistance R DS(on)1 = 294 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A) RDS(on)2 = 336 mΩ MAX. (VGS = −4.0 V, ID = −1.0 A) RDS(on)3 = 514 mΩ MAX. (VGS = −2.5 V, ID = −0.5 A)

ORDERING INFORMATION

µPA652TT 6pinWSOF (1620) Marking: WF ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS −20 V Gate to Source Voltage (VDS = 0 V) V GSS m12 V Drain Current (DC) ID(DC) m2.0 A Drain Current (pulse) Note1 ID(pulse) m8.0 A Total Power Dissipation PT1 0.2 W Total Power Dissipation Note2 PT2 1.3 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 5000 mm2 x 1.1 mm, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 0.05 S 2.0±0.2 0.4±0.1 0.25±0.1 2.1±0.1 1.6 0.65 0.65 0~0.05 S MAX. 0.8 0.15+0.1 −0.05 0.2+0.1 −0.05 0.1 SM 56 4 31 2 1,2,5,6 : Drain 3 : Gate 4 : Source EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain

µµ µµPA652TT ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = −20 V, VGS = 0 V −10 µA Gate Leakage Current IGSS VGS = m12 V, VDS = 0 V m10 µA Gate Cut-off Voltage VGS(off) VDS = −10 V, ID = −250 µA −0.5 −1.1 −1.5 V Forward Transfer Admittance | yfs | VDS = −10 V, ID = −1.0 A 1.0 2.4 S Drain to Source On-state Resistance RDS(on)1 VGS = −4.5 V, ID = −1.0 A 235 294 m Ω RDS(on)2 VGS = −4.0 V, ID = −1.0 A 252 336 m Ω RDS(on)3 VGS = −2.5 V, ID = −0.5 A 385 514 m Ω Input Capacitance Ciss VDS = −10 V 126 pF Output Capacitance Coss VGS = 0 V 47 pF Reverse Transfer Capacitance Crss f = 1.0 MHz 17 pF Turn-on Delay Time td(on) VDD = −10 V, ID = −1.0 A 28 ns Rise Time tr VGS = −4.0 V 101 ns Turn-off Delay Time td(off) RG = 10 Ω 80 ns Fall Time tf 85 ns Total Gate Charge QG VDD = −16 V 1.1 nC Gate to Source Charge QGS VGS = −4.0 V 0.4 nC Gate to Drain Charge QGD ID = −2.0 A 0.5 nC Body Diode Forward Voltage VF(S-D) IF = 2.0 A, VGS = 0 V 0.93 V TEST CIRCUIT 2 GATE CHARGETEST CIRCUIT 1 SWITCHING TIME PG. R G VGS (−) D.U.T. R L VDD τ = 1 sµ Duty Cycle ≤ 1% τ PG. 50 Ω D.U.T. R L VDD IG = −2 mA VGS Wave Form VDS Wave Form VGS (−) VDS (−) 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% VGS Wave Form VDS Wave Form VGS (−) VDS (−) 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%

µµ µµPA652TT TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C PT - Total Power Dissipation - W 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5 Mounted on FR-4 board of 5000 mm 2 x 1.1 mm, t ≤ 5 sec. TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A - 0.01 - 0.1 - 1 - 10 - 0.1 - 1 - 10 - 100 100 ms 10 ms ID(pulse) ID(DC) 1 ms RDS(on) Limited (V GS = –4.5 V) 5 s Single Pulse Mounted on FR-4 board of 5000 mm 2 x 1.1 mm PW = 100 µ s VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 100 1000 Single Pulse Mounted on FR-4 board of 5000 mm x 1.1 mm PW - Pulse Width - s 1 m 10 m 100 m 1 10 100 1000

µµ µµPA652TT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A - 1 - 2 - 3 - 4 - 5 Pulsed –2.5 V VGS = –4.5 V –4.0 V VDS - Drain to Source Voltage - V ID - Drain Current - A - 0.0001 - 0.001 - 0.01 - 0.1 - 1 - 10 0 - 1- 2- 3- 4 VDS = –10 V Pulsed –25°C T A = 125°C 75°C 25°C VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate Cut-off Voltage - V - 0.6 - 0.8 - 1 - 1.2 - 1.4 - 1.6 -50 0 50 100 150 VDS = –10 V ID = –250 µ A Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S 0.01 0.1 100 VDS = –10 V Pulsed 125°C TA = –25°C 75°C 25°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 200 400 600 800 -50 0 50 100 150 Pulsed VGS = –2.5 V, I D = –0.5 A VGS = –4.0 V, I D = –1.0 A VGS = –4.5 V, I D = –1.0 A Tch - Channel Temperature - °C RDS(on) - Drain to Source On-state Resistance - mΩ 200 400 600 800 0 - 2- 4- 6- 8 Pulsed ID = –1.0 A VGS - Gate to Source Voltage - V

µµ µµPA652TT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ 200 400 600 800 VGS = –4.5 V Pulsed –25°C TA = 125°C 75°C 25°C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 200 400 600 800 VGS = –4.0 V Pulsed –25°C TA = 125°C 75°C 25°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT SWITCHING CHARACTERISTICS RDS(on) - Drain to Source On-state Resistance - mΩ 200 400 600 800 VGS = –2.5 V Pulsed –25°C TA = 125°C 75°C 25°C ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 100 1000 - 0.1 - 1 - 10 VDD = –10 V VGS = –4.0 V RG = 10 Ω td(off) td(on) tf tr ID - Drain Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SOURCE TO DRAIN DIODE FORWARD VOLTAGE Ciss, Coss, Crss - Capacitance - pF 100 1000 - 0.1 - 1 - 10 - 100 VGS = 0 V f = 1.0 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V IF - Diode Forward Current - A 0.01 0.1 VGS = 0 V Pulsed VF(S-D) - Source to Drain Voltage - V

µµ µµPA652TT DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Source Voltage - V - 2 - 4 - 6 - 8 ID = –2.0 A VDD = –4.0 V –10 V –16 V QG - Gate Change - nC

µµ µµPA652TT [MEMO]

µµ µµPA652TT M8E 00. 4 The information in this document is current as of September, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).