UPA651TT

UPA651TT NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR µµµµPA651TT P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. G16203EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan © 2002

DESCRIPTION

The µPA651TT is a switching device, which can be driven directly by a 1.8 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

FEATURES

• 1.8 V drive available
• Low on-state resistance RDS(on)1 = 69 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A) RDS(on)2 = 88 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A) RDS(on)3 = 142 mΩ MAX. (VGS = −1.8 V, ID = −1.5 A)

ORDERING INFORMATION

µPA651TT 6pinWSOF (1620) Marking: WE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS −20 V Gate to Source Voltage (VDS = 0 V) V GSS m8.0 V Drain Current (DC) (TA = 25°C) I D(DC) m5.0 A Drain Current (pulse) Note1 ID(pulse) m20 A Total Power Dissipation (TA = 25°C) P T1 0.2 W Total Power Dissipation (TA = 25°C) Note2 PT2 1.4 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on FR-4 board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 0.05 S 2.0±0.2 0.4±0.1 0.25±0.1 2.1±0.1 1.6 0.65 0.65 0~0.05 S MAX. 0.8 0.15+0.1 −0.05 0.2+0.1 −0.05 0.1 SM 56 4 31 2 1,2,5,6 : Drain 3 : Gate 4 : Source EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain

µµµµPA651TT ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS VDS = −20 V, VGS = 0 V −10 µA Gate Leakage Current I GSS VGS = m8.0 V, VDS = 0 V m10 µA Gate Cut-off Voltage V GS(off) VDS = −10 V, ID = −1.0 mA −0.45 −1.5 V Forward Transfer Admittance | y fs | VDS = −10 V, ID = −2.5 A 4.0 S Drain to Source On-state Resistance R DS(on)1 VGS = −4.5 V, ID = −2.5 A 55 69 m Ω RDS(on)2 VGS = −2.5 V, ID = −2.5 A 66 88 m Ω RDS(on)3 VGS = −1.8 V, ID = −1.5 A 85 142 m Ω Input Capacitance C iss VDS = −10 V 600 pF Output Capacitance C oss VGS = 0 V 120 pF Reverse Transfer Capacitance C rss f = 1.0 MHz 75 pF Turn-on Delay Time t d(on) VDD = −10 V, ID = −2.5 A 45 ns Rise Time t r VGS = −4.0 V 200 ns Turn-off Delay Time t d(off) RG = 10 Ω 435 ns Fall Time t f 345 ns Total Gate Charge Q G VDD = −16 V 5.5 nC Gate to Source Charge Q GS VGS = −4.0 V 1.2 nC Gate to Drain Charge Q GD ID = −5.0 A 2.1 nC Body Diode Forward Voltage V F(S-D) IF = 5.0 A, VGS = 0 V 0.94 V TEST CIRCUIT 2 GATE CHARGETEST CIRCUIT 1 SWITCHING TIME PG. R G VGS (−) D.U.T. R L VDD τ = 1 sµ Duty Cycle ≤ 1% τ PG. 50 Ω D.U.T. R L VDD IG = −2 mA VGS Wave Form VDS Wave Form VGS (−) VDS (−) 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% VGS Wave Form VDS Wave Form VGS (−) VDS (−) 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%

µµµµPA651TT TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 25 50 75 100 125 150 175 PT - Total Power Dissipation - W 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °CT A - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A PW = 1 ms 100 ms 10 ms ID(pulse) ID(DC) 5 s R DS(on) Lim ited (V GS = − 4.5 V) Single Pulse Mounted on FR-4 board of 50 cm 2 × 1.1 mm VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - °C/W 100 1000 Single Pulse Mounted on FR-4 board of 50 cm2 × 1.1 mm PW - Pulse Width - s −0.1 −1 −10 −100 −100 −10 −0.1 −0.01 1 m 10 m 100 m 1 10 100 1000

µµµµPA651TT DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A Pulsed VGS = − 4.5 V − 2.5 V − 1.8 V ID - Drain Current - A TA = 125 °C 75 °C 25 °C − 25 °C VDS = − 10 V Pulsed VDS - Drain to Source Voltage - V V GS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate Cut-off Voltage - V 0.4 0.5 0.6 0.7 0.8 0.9 -50 0 50 100 150 VDS = − 10 V ID = − 1 mA | yfs | - Forward Transfer Admittance - S 0.1 100 T A = − 25 °C 25 °C 75 °C 125 °C V DS = − 10 V Pulsed Tch - Channel Temperature - °CI D - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 120 140 V GS = − 4.5 V Pulsed T A = 125 °C 75 °C 25 °C − 25 °C 100 120 140 V GS = − 2.5 V Pulsed T A = 125 °C 75 °C 25 °C − 25 °C RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A −0.01 −0.1 −1 −10 −20 −16 −12 −100 −10 −0.1 −0.01 −0.001 −0.0001

µµµµPA651TT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 120 140 V GS = − 1.8 V Pulsed T A = 125 °C 75 °C 25 °C − 25 °C 100 120 140 ID = − 2.5 A Pulsed − 1.5 A RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 120 140 -50 0 50 100 150 Pulsed VGS = − 1.8 V − 2.5 V − 4.5 V 100 1000 10000 V GS = 0 V f = 1 M Hz C iss C oss C rss RDS(on) - Drain to Source On-state Resistance - mΩ Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 1000 10000 V DD = − 10 V V GS = − 4.0 V R G = 10 Ω td(off) td(on) tr tf 0123456 ID = −5.0 A VDD = − 16 V − 10 V − 4 V td(on), tr, td(off), tf - Switching Time - ns ID - Drain Current - A VGS - Gate to Source Voltage - V QG - Gate Charge - nC −0.1 −1 −10 −100 −0.01 −0.1 −1 −10

µµµµPA651TT SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 0.01 0.1 100 Pulsed VGS = 0 V VSD - Source to Drain Voltage - V

µµµµPA651TT [MEMO]

µµµµPA651TT M8E 00. 4 The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).