UPA611TA VBSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 9
Technical content
Dual N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) 0.022 at VGS = 4.5 V 1.8 nC 0.028 at VGS = 2.5 V 5.0 TSOP-6 Top View 2.85 mm 3 mm D2 G2 S1 S2 D1 G1 N-Channel MOSFET G 1 S 1 N-Channel MOSFET G 2 D 2 S 2 Notes: a. T C = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 150 °C/W. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 VGate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID A TC = 70 °C 4.0 TA = 25 °C 3.5b, c TA = 70 °C 2.8b, c Pulsed Drain Current IDM 18 Continuous Source-Drain Diode Current TC = 25 °C IS 1.17 TA = 25 °C 0.95b, c Maximum Power Dissipation TC = 25 °C PD 1.6 WTC = 70 °C 1.0 TA = 25 °C 1.14b, c TA = 70 °C 0.73b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °CSoldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, d t ≤ 5 s R thJA 93 110 °C/WMaximum Junction-to-Foot Steady State RthJF 75 90
FEATURES
Halogen-free According to IEC 61249-2-21 Definition TrenchFET ® Power MOSFET 100 % R g Tested Compliant to RoHS Directive 2002/95/EC D UPA611TA www.VBsemi.com 6.0 6 0 g A ll data sheet.com
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damag e to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Un it Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 20 V VDS Temperature Coefficient ΔVDS/TJ ID = 250 µA 29 mV/°CVGS(th) Temperature Coefficient ΔVGS(th)/TJ - 4 Gate-Source Threshold Voltage VGS(th) VDS = VGS , ID = 250 µA 0.4 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µAVDS = 20 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 10 V 10 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 3.4 A 0.0222 ΩVGS = 2.5 V, ID = 3.0 A 0.028 Forward Transconductancea gfs VDS = 10 V, ID = 3.4 A 10 S Dynamicb Input Capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz 400 pFOutput Capacitance Coss 55 Reverse Transfer Capacitance Crss 26 Total Gate Charge Qg VDS = 10 V, VGS = 10 V, ID = 3.4 A 3.7 6 nCVDS = 10 V, VGS = 4.5 V, ID = 3.4 A 1.8 3 Gate-Source Charge Qgs 0.74 Gate-Drain Charge Qgd 0.42 Gate Resistance Rg f = 1 MHz 1 5 10 Ω Tur n-On Delay Tim e td(on) VDD = 10 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 4.5 V, Rg = 1 Ω 10 20 ns Rise Time tr 15 30 Turn-Off Delay Time td(off) 10 20 Fall Time tf 10 20 Tur n-On Delay Tim e td(on) VDD = 10 V, RL = 5.6 Ω ID ≅ 2.7 A, VGEN = 10 V, Rg = 1 Ω 51 0 Rise Time tr 15 30 Turn-Off Delay Time td(off) 10 20 Fall Time tf 10 20 Drain-Source Body Diode Characteristics Continuous Source-Drain Dio de Current IS TC = 25 °C 1.2 A Pulse Diode Forward Current ISM 18 Body Diode Voltage VSD IS = 2.7 A, VGS = 0 V 0.85 1.2 V Body Diode Reverse Recovery Time trr IF = 2.7 A, dI/dt = 100 A/µs, TJ = 25 °C 10 20 ns Body Diode Reverse Recovery Charge Qrr 41 0 n C Reverse Recovery Fall Time ta 6 ns Reverse Recovery Rise Time tb 4 UPA611TA www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise note d Output Characteristics On-Resistance vs. Drain Cur rent and Gate Voltage Gate Charge VGS =8 Vt hru3V VGS =2V VGS =1V VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D 0.00 0 3 6 9 12 15 VGS = V VGS = V - On-Resistance (Ω)R DS(on) ID - Drain Current (A) 01234 VDS =1 4V ID =3 . 4A VDS =6V VDS =1 0V - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D Crss 100 200 300 400 500 600 0 5 10 15 20 25 30 Ciss Coss VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 15 ID =3 . 4A VGS = V,V GS =4 . 5V TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) UPA611TA www.VBsemi.com 2.5 2.5 4.5 0.030 0.020 0.010 0.040 0.050 g A ll data sheet.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 100 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA (V) VGS(th) TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 02468 1 0 TJ =2 5 ° C ID =3 . 4A TJ = 125 °C - On-Resistance (Ω)RDS(on) VGS - Gate-to-Source Voltage (V) 0.01 0.1 1 10 100 1000 Time (s) Power (W) Safe Operating Area, Junction-to-Ambient 100 0.1 1 10 100 0.01 0.1 TA = 25 °C Single Pulse Limited by RDS(on)* BVDSS Limited 1m s 100 μs 10 ms VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified - Drain Current (A)ID DC 1s ,1 0s 100 ms UPA611TA www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise note d * The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional hea tsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 2 55 07 5 1 0 0 1 2 5 1 5 0 Package Limited TC - Case Temperature (°C) I D - Drain Current (A) Power Derating 0.0 0.4 0.8 1.2 1.6 25 50 75 100 125 150 T C - Foot Temperature (°C) Power Dissipation (W) UPA611TA www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Ambi ent 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA =1 5 0 ° C / W 3. TJM -T A =P DMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 0.05 Single Pulse 0.02 UPA611TA www.VBsemi.com g A ll data sheet.com
L 5 4 R R C 0.15 M B A b C 0.08
0.17 Ref
-C- Seating Plane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 UPA611TA www.VBsemi.com g A ll data sheet.com
RECOMMENDED MINIMUM PADS FOR TSOP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) UPA611TA www.VBsemi.com g A ll data sheet.com
o improve reliability, function or design or for other reasons, product specifications and data are subject t o change without notice. Taiwan VBsemi Elect ronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwan VBsemi make s no guarantee, representation or warranty on the product for any particular purpose of any goods or cont inuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1 ) any application and all liability arising out of or use of any products; (2) any and all liability, including but no t limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a parti cular purpose, non-infringement and merchantability guarantee. Statement on cert ain types of applications are based on knowledge of the product is often used in a typical application of t he general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitab le for a particular application is non-binding. It is the customer's responsibility to verify specific product features i n the products described in the specification is appropriate for use in a particular application. Parameter data sh eets and technical specifications can be provided may vary depending on the application and performance over t ime. All operating parameters, including typical parameters must be made by customer's technical expert s validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaini ng applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, u se or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and c onditions in writing. The information p rovided in this document and the company's products without a license, express or implied, by estoppel or ot herwise, to any intellectual property rights granted to the VBsemi act or document. Product names and tradema rks referred to herein are trademarks of their respective representatives will be all. MaterialCategory Policy Taiwan VBsemi Elec tronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant a nd meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronicequip ment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) Pleasenotethatso medocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confirm that all pr oducts identified as consistent with the Directive 2002/95 / EC European Directive 2011/65/. Taiwan VBsemi Elec tronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halo gen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi document s still refer to the definition of IEC 61249-2-21, and we are sure that all products conformtoconfirmc ompliancewithIEC61249-2-21standardlevelJS709A. UPA611TA www.VBsemi.com A ll data sheet.com