UPA610TA VBSEMI | Alldatasheet
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Dual P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) ()I D (A)a Qg (Typ.) - 20 0. at V GS = - 4.5V - 4.0 2.7 nC 0.100 at VGS = - 2.5 V - 3.2 TSOP-6 Top View 2.85 mm 3 mm D2 G2 S1 S2 D1 G1 S2 P-Channel MOSFET P-Channel MOSFET Notes: a. T C = 25 °C. b. Surface mounted on 1" x 1" FR4 boa rd. t = 5 s. d. Maximum under steady state conditions is 150 °C/W. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unles s otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 4.0 A TC = 70 °C - 3.3 TA = 25 °C - 3.6b, c TA = 70 °C -3.1b, c Pulsed Drain Current IDM - 12 Continuous Source-Drain Diode Current TC = 25 °C IS - 1.17 TA = 25 °C - 0.95b, c Maximum Powe r Dissipation TC = 25 °C PD 1.4 W TC = 70 °C 0.9 TA = 25 °C 1.14b, c TA = 70 °C 0.73b, c Operating Junction and Stor age Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maxi mum Unit Maximum Junction-to-Ambientb, d t 5 s R thJA 93 110 °C/W Maximum Junction-to-Foot Steady Sta te RthJF 75 90
FEATURES
Halogen-free According to IEC 61249-2-2 Definition TrenchFET ® Power MOSFET 100 % R g Tested Compliant to RoHS Directive 2002/9 5/EC
APPLICATIONS
Load Switch for Portable Ap plica tions Battery Switch for Portable Devices Computers - Bus Switch - Load Switch UPA610TA www.VBsemi.com 075 g A ll data sheet.com
Notes: Pulse test; pulse width 300 µs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond t hose listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, u nless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 17 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ 3.5 Gate-Source Threshold V oltage VGS(th) VDS = VGS , ID = - 250 µA - 0.5 - 2.0 V Gate-S ou rce Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V 1 µAVDS = - 20 V , VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5V - 8 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5V, ID = - 2.5 A 0.075 VGS = - 2.5 V, ID = - 1 A 0.100 Forward Tra nsconductancea gfs VDS = - 10 V, ID = - 2.6 A 5S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 210 pFOutput C apacitance Coss 45 Reverse Transfe r Capacitance Crss 33 Total Gate Charge Qg VDS = - 10 V, VGS = - 4.5 V, ID = - 2.6 A 5.2 8 nCVDS = - 10 V, VGS = - 4.5 V, ID = - 2.6 A 2.7 4 Gate-Source Charge Qgs 0.94 Gate-Drain Charge Qgd 1.3 Gate Resista nce Rg f = 1 MHz 2 7 14 Tur n-On Delay Time td(on) VDD = - 10 V, RL = 7.1 ID - 2.1 A, VGEN = - 4.5 V, Rg = 1 39 59 ns Rise Time tr 25 38 Turn-Off Dela y Time td(off) 13 20 Fall Ti me tf 91 8 Tur n-O n Delay Time td(on) VDD = - 10 V, RL = 7.1 ID - 2.1 A, VGEN = - 4.5 V, Rg = 1 51 0 Rise Time tr 10 20 Turn-Off Dela y Time td(off) 14 21 Fall T ime tf 71 4 Drain-Source B ody Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C 1.17 A Pulse Diod e Forward Current ISM 8 Body Diode Voltage VSD IS = - 2.1 A, VGS 0 V 0.85 1.2 V Body Diode Reverse Recove ry Time trr IF = - 2.1 A, dI/dt = 100 A/µs, TJ = 25 °C 13 20 ns Body Diode Reverse Reco very Charge Qrr 61 2 n C Rev erse Recovery Fall Time ta 9 ns Reverse Recove ry Rise Time tb 4 UPA610TA www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS (2 5 °C, unless otherwise noted) Output Char acteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 00 .511 .52 ID - Drain Current (A) VDS - Drain-to- Source Voltage (V) V thru 5V GS = 10 V VGS = 1 V VGS = 2.5V VGS = 4 V 0.055 0.070 0.085 0.100 0.115 02468 RDS(on) - On-Resistance (Ω) ID -D r a in C u r r e n t ( A ) VGS = 2.5 V VGS = 4.5V 01 .534 .56 VGS - Gate-to-S ource Voltage (V) Qg - Total Gate Ch arge (nC) VDS = 14 V VDS = 10 V VDS = 6 V ID = 2.6 A Transfer Characteristics Capacitance On-R esistance vs. Junction Temperature 1.5 3.5 01234 ID - Drain Cur rent (A) VGS - Gate-to-S ource Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 100 200 300 400 01 0 2 0 3 0 C - Capacitan ce (pF) VDS - Drain-to- Source Voltage (V) Ciss Coss Crss 0.7 0.9 1.1 1.3 1.5 1.7 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 1 5 0 RDS(on) - On-Resistance (No rmalized) TJ - Junction Temperature (°C) ID = 2.5 A VGS = 4.5 V VGS = 2.5 V UPA610TA www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Source-Drain Diode Forward Voltage Threshold Voltage 0.001 0.01 0.1 100 IS - Source Current (A VSD - Source-to-D rain Voltage (V) TJ = 150 °C TJ = 25 °C 1.3 1.5 1.7 1.9 2.1 - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V) TJ -T e m pe r a t u r e (°C) ID = 250 μA On-Resistance vs. Gate-to-Source Voltage Sing le Pulse Power (Junction-to-Ambient) 0.0 0.03 0.06 0.1 0.2 0.3 2468 1 0 RDS(on) - On-Resistance (Ω) VGS - Gate-to-Source Vol tage (V) TJ = 125 °C TJ = 25 °C ID = 2.5 A 0.01 0.1 1 10 100 1000 Time (s) Power (W) Safe Operating Area, Junct ion-to-Ambient 0.01 0.1 0.1 1 10 100 ID - Drain Current (A) VDS - Drain-to- Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limited by RDS(on)* 1 ms TC = 25 °C Single Pulse BVDSS Limi ted 10 ms 100 μs 1 s, 10 s DC UPA610TA www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS (2 5 °C, unless otherwise noted) * The power dissipat ion PD is based on T J(max) = 150 °C, using junctio n-to-case th ermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Power Derating , Junction-to-Case 0.5 1.5 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Power (W) TC - Case Temperature (°C) Power Derati ng, Junction-to-Ambient 0.0 0.2 0.4 0.6 0.8 1.0 02 5 5 0 7 5 1 0 0 1 2 5 1 5 0 Power (W) TA - Ambient Tempe rature (°C) UPA610TA www.VBsemi.com g A ll data sheet.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Normalized Thermal Trans ient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal I mpedance 0.1 0.01 Notes: PDM 1. Duty Cycle, D = Per Unit Base = RthJA =1 5 0 °C / W 3. TJM -T A =P DMZthJA(t) 4. Surface M ounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 Normalized Th ermal Transient Impedance, Junction-to-Foot 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal I mpedance 0.1 0.01 0.05 Single Pulse 0.02 UPA610TA www.VBsemi.com g A ll data sheet.com
L 5 4 R R C 0.15 M B A b C 0.08
0.17 Ref
-C- Seating Pl ane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 UPA610TA www.VBsemi.com g A ll data sheet.com
RECOMMENDED MINIMUM PADS FOR TS OP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) UPA610TA www.VBsemi.com g A ll data sheet.com
ducts due to improve reliability, function or design or for other reasons, product specifications and data a re subject to change without notice. Taiwa n VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their repres entatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incom plete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Taiwa n VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any go ods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relin quished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, inclu ding but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, inclu ding a particular purpose, non-infringement and merchantability guarantee. State ment on certain types of applications are based on knowledge of the product is often used in a typical appli cation of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the produc t is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific produc t features in the products described in the specification is appropriate for use in a particular application. Parame ter data sheets and technical specifications can be provided may vary depending on the application and perform ance over time. All operating parameters, including typical parameters must be made by customer's techn ical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unles s expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or lif e sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own ris k. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The in formation provided in this document and the company's products without a license, express or implied, by est oppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Materi alCategoryPolicy Taiwa n VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS c ompliant and meets the definition of restrictions under Directive of the European Parliament 2011/ 65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electr onicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) Pleas enotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We confir m that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/ 65/. Taiwa n VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halog en-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsem i documents still refer to the definition of IEC 61249-2-21, and we are sure that all products confor mtoconfirmcompliancewithIEC61249-2-21standardlevelJS709A. UPA610TA www.VBsemi.com A ll data sheet.com