UPA610TA RENESAS | Alldatasheet
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© 1996 DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA610TA P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Document No. D11199EJ1V0DS00 (1st edition) Date Published September 1996 P Printed in Japan
DESCRIPTION
The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.
FEATURES
- Can be driven by a 2.5 V power source.
- Low Gate Cut-off Voltage. ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) Drain to Source Voltage VDSS –30 V Gate to Source Voltage V GSS +20 V Drain Current (DC) I D(DC) +0.1 A Drain Current (pulse) I D(pulse) +0.4 Note A Total Power Dissipation PT 300 (TOTAL) mW Channel Temperature T ch 150 °C Storage Temperature T stg –55 to +150 °C Note PW ≤ 10 µs, Duty Cycle ≤ 1 % Package Drawings (unit: mm) Equivalent Circuit Pin Connection (Top View) 654 123 1. Source 1 2. Source 2 3. Gate 2 4. Drain 2 5. Gate 1 6. Drain 1 Markin g : JB Internal Diode Source Drain Gate Gate Protect Diode The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 2.9 ±0.2 1.9 0.95 0.95 0.32 +0.1 –0.05 1.5 2.8 ±0.2 +0.1 –0.15 0.65 0.16 +0.1 –0.06 0 to 0.1 0.8 1.1 to 1.4
µPA610TA ELECTRICAL CHARACTERISTICS (T A = 25 ˚C) CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Drain Cut-off Current I DSS –1 µAV DS = –30 V, VGS = 0 Gate Leakage Current I GSS +10 µAV GS = +20 V, VDS = 0 Gate Cut-off Voltage V GS(off) –1.0 –1.4 –1.7 V V DS = –3 V, ID = –10 µA Forward Transfer Admittance | y fs |2 0 m S V DS = –3 V, ID = –10 mA Drain to Source On-State R DS(on)1 23 60 Ω VGS = –2.5 V, ID = –1 mA Resistance Drain to Source On-State R DS(on)2 11 23 Ω VGS = –4 V, ID = –10 mA Resistance Drain to Source On-State R DS(on)3 61 3 Ω VGS = –10 V, ID = –10 mA Resistance Input Capacitance C iss 5p F V DS = –3 V Output Capacitance C oss 15 pF V GS = 0 Reverse Transfer Capacitance C rss 1.3 pF f = 1 MHz Turn-on Delay Time t d(on) 140 ns V DD = –3 V, ID = –10 mA Rise Time t r 330 ns V GS(on) = –4 V, RG = 10 Ω Turn-off Delay Time t d(off) 220 ns R L = 300 Ω Fall Time t f 320 ns
µPA610TA VDS = –3 V DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - ˚C 0 30 60 90 120 150 dT - Derating Factor - % 100 TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - mA –0.001 –0.01 –0.1 –10 –100 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - mA IyfsI - Forward Transfer Admittance - mS 100
1000 VDS = –3 V
TA = 125 °C TA = 75 °C TA = 25 °C TA = –25 °C DRAIN TO SOURCE ON–STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - mA R DS(on) - Drain to Source On-State Resistance - Ω VGS = –2.5 V DRAIN TO SOURCE ON–STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - mA R DS(on) - Drain to Source On-State Resistance - Ω TA = 125 °C TA = 75 °C VGS = –4 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - mA –20 –40 –60 –80 –100 VGS = –3 V VGS = –2.5 V VGS = –10 V VGS = –6 V VGS = –4 V TA = 25 °C TA = –25 °C TA = 125 °C TA = 75 °C TA = 125 °C TA = 75 °C TA = –25 °C TA = 25 °C TA = –25 °C TA = 25 °C
µPA610TA DRAIN TO SOURCE ON–STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - mA R DS(on) - Drain to Source On-Stage Resistance - Ω V GS = –10 V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V R DS(on) - Drain to Source On-State Resistance - Ω CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V –1 –10 –100 VGS = 0 f = 1 MHz C iss,Coss,Crss - Capacitance - pF 100 C iss C oss C rss SWITCHING CHARACTERISTICS ID - Drain Current - mA –10 –100 –1000 VDD = –3 V VGS(on) = –4 V R in = 10 Ω td(on),tr,td(off),tf - Switching Time - ns 100 1000 tr td(on) tf td(off) SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V ID - Reverse Drain Current - mA –0.1 –10 –100 –1000 TA = –25 °C TA = 25 °C ID = –1 mA ID = –100 mA ID = –10 mA TA = 125 °C TA = 75 °C
µPA610TA REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices C11531E Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E
µPA610TA [MEMO]
µPA610TA [MEMO]
µPA610TA No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5