UPA607T

UPA607T VBSEMI | Alldatasheet

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a. Sur f ace mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under steady stat e conditions is 110 °C/W. d. Based on T C = 25 °C. PRODUCT SUMMARY VDS (V) R DS(on) (Ω ) Typ. ID (A) d Qg (TYP.) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless ot herwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS -60 VGate-Source V oltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID -4.5 A TC = 70 °C -4.0 TA = 25 °C -3.5 a,b TA = 70 °C -3.0 a,b Pulsed Drain Current (t = 100 μs) IDM -20 Continuous Source-Drain Diode Current TC = 25 °C IS -3.9 TA = 25 °C -2.1 a,b Avalanch e Current L = 0.1 mH IAS -15 Single-Pulse Avalanche Energy EAS 11.25 mJ Maximum Power Dissipation TC = 25 °C PD 4.2 WTC = 70 °C 2.7 TA = 25 °C 2 a,b TA = 70 °C 1.3 a,b Operating Junction and St orage Temperature Range TJ, Tstg -55 to 150 °C

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition  T re nchFET® Power MOSFET  Compliant to Ro HS Directive 2002/95/EC Dual P-Channel 60-V (D-S) MOSFET P-Channel MOSFET P-Channel MOSFET UPA607T www.VBsemi.com TSOP-6 Top View 2.85 mm 3 mm D2 G2 S1 S2 D1 G1 THERMAL RESISTANCE R ATINGS PARAMETER SYMBOL TYPICAL MAXIMU M UNIT Maximum junction-to-ambient a t  5 s R thJA 100 130 °C/WMaximum junctio n-to-case (drain) Steady state R thJF 60 75 001 g A ll data sheet.com

a. Puls e test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subj ect to production testing. Stresses beyond those l isted under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unles s otherwise noted) PARAMETER SYMB OL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = -250 μA -60 - - V VDS Temperature Coefficient ΔVDS/TJ ID = -250 μA -- 6 . 7 - mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ -4 . 3 - Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = -250 μA -1 - -3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = -60 V, VGS = 0 V - - -1 μA VDS = -60 V, VGS = 0 V, TJ = 55 °C - - -5 On-State Drain Current a ID(on) VDS ≥ -10 V, VGS = -10 V -30 - - A Drain-Source On-State Resistance a RDS(on) VGS = -10 V, ID = -3.5 A - 0.070 Ω Forward Transconductance a gfs VDS = -30 V, ID = -3.5 A - 11 - S Dynamic b Input Capacitance Ciss VDS = -30 V, VGS = 0 V, f = 1 MHz - 832 - pFOutput Capacitance Coss -8 8 - Rev erse Transfer Capacitance Crss -6 3 - Total Gate Charge Qg VDS = -30 V, VGS = -10 V, ID = -3.5 A - 20 30 nC VDS = -30 V, VGS = -4.5 V, ID = -3.5 A - 10.1 15.2 Gate-So urce Charge Qgs -3 . 3 - Gate-Drain Charge Qgd -3 . 9 - Gate Re sistance Rg f = 1 MHz 1.8 9 1 8 Ω Turn-On Delay Time td(on) VDD = -30 V, RL = 10.7 Ω ID ≅ -2.8 A, VGEN = -10 V, Rg = 1 Ω -81 6 ns Rise Ti me tr -61 2 Turn-Off DelayTime td(off) -3 55 3 Fal l Time tf -1 62 4 Turn-On D elay Time td(on) VDD = -30 V, RL = 10.7 Ω ID ≅ -2.8 A, VGEN = -4.5 V, Rg = 1 Ω -4 0 60 Rise T ime tr -2 8 42 Turn-Of f DelayTime td(off) -3 14 7 Fal l Time tf -1 52 3 Drain-Sour ce Body Diode Characteristics Continous Source-Drain Diode Current I S TC = 25 °C - - -3.5 A Pulse Diode Forward Current (t = 100 μs) ISM --- 2 0 Bo dy Diode Voltage VSD IS = -2.8 A, VGS = 0 V - -0.85 - 1.2 V Body Diode Reverse Recovery Time trr IF = -2.8 A, dI/dt = 100 A/μs, TJ = 25 °C -3 24 8 n s Body Diode Reverse Recovery Charge Q rr -4 56 8 n C Reverse Recovery Fall Time ta -2 4 - ns Reverse Recovery Rise Time tb -8 - UPA607T www.VBsemi.com g A ll data sheet.com

L CHARACTERISTICS (25 °C, unless otherwise noted) Output Characteristics On-Resista nce vs. Drain Current Gate Charge Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 0.6 1.2 1.8 2.4 ID - Drain Current (A VDS - Drain -to-Source Voltage (V) VGS = 4 V VGS = 10V thru 4.5V VGS = 3 V 0.05 0.1 0.15 0.2 0 5 10 15 20 RDS(on) - On-R esistance (Ω) ID - Drain Current (A VGS = 4.5 V VGS = 10 V 0 5 10 15 20 25 VGS - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VDS = 48 V VDS = 30 V VDS = 15 VID = 3.5 A 0.5 1.5 0 1 2 3 4 ID - Drain Cur rent (A) VGS - Gate-to-Source Voltage (V) TC = 25 °C TC = 125 °C TC = - 55 °C 315 630 945 1260 0 6 12 18 24 C - Capacitance (pF) VDS - Drai n-to-Source Voltage (V) Ciss Coss Crss 0.6 0.95 1.3 1.65 - 50 - 25 0 25 50 75 100 125 150 RDS(on) - On-Resis tance (Normalized) TJ - Junction Temperature (°C) VGS = 10 V, 3.5A VGS = 4.5 V, 2.8 A A UPA607T www.VBsemi.com g A ll data sheet.com

L CHARACTERISTICS (25 °C, unless otherwise noted) Source-D rain Diode Forward Voltage Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Safe Operating Area 0.1 100 IS - Source Current (A) VSD - Source-to-Drai n Voltage (V) TJ = 150 °C TJ = 25 °C 1.15 1.35 1.55 1.75 1.95 2.15 - 50 - 25 0 25 50 75 100 125 150 VGS(th) (V) TJ - Temperature (°C) ID = 250 μA 0.05 0.10 0.15 0.20 2 4 6 8 10 RDS(on) - On-R esistance (Ω) VGS - Gate-to-Source Voltage (V) TJ = 125 °C TJ = 25 °C ID = 3.5 A Power (W) Time (s) 1 100 6001010-110-210-3 0.01 0.1 100 0.1 1 10 100 ID - Drain Cur rent (A) VDS - Drai n-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 100 ms Limit ed by RDS(on)* 1 ms TA = 25 °C BVDSS Limi ted 10 ms 100 μs 10 s, 1 s DC Limit ed by IDM UPA607T www.VBsemi.com g A ll data sheet.com

L CHARACTERISTICS (25 °C, unless otherwise noted) Current Derating* Pow er, Junction-to-Foot Power Derating, Junction-to-Ambient * The power di ssipation PD is based on T J (max.) = 150 °C, using junction-to-case thermal re sistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the cu rrent rating, when this rating falls below the package limit. 1.5 4.5 0 25 50 75 100 125 150 ID - Drain Current (A TC - Case Temperature (°C) 0 25 50 75 100 125 150 Power (W) TC - Case Temp erature (°C) 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 Power (W) TA - Ambient Temperature (°C) UPA607T www.VBsemi.com g A ll data sheet.com

L CHARACTERISTICS (25 °C, unless otherwise noted) Norma lized Thermal Transient Impedance, Junction-to-Ambient Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 1 10 60010-110-4 100 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effectiv e Transient Thermal Impedance 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - TA = PDMZthJA(t) Notes: 4. Surface Mounted PDM 10- 3 10- 2 11 010- 110- 4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized EffectiveTransient Thermal Impedance UPA607T www.VBsemi.com g A ll data sheet.com

www.VBsemi.com 2 3 Gauge Plane L 5 4 R R C 0.15 M B A b C 0.08

0.17 Ref

-C- Sea ting Plane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 g A ll data sheet.com

www.VBsemi.com RECOMMENDED MINIMUM PADS FOR TSOP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) g A ll data sheet.com

www.VBsemi.com Dis claimer All products due to improve reliability, function or design or for other reasons, product specifications and dat a are subject to change without notice. Tai wan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their rep resentatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or inc omplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.com) Tai wan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi rel inquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, inc luding but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, inc luding a particular purpose, non-infringement and merchantability guarantee. Sta tement on certain types of applications are based on knowledge of the product is often used in a typical app lication of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the prod uct is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific prod uct features in the products described in the specification is appropriate for use in a particular application. Para meter data sheets and technical specifications can be provided may vary depending on the application and perf ormance over time. All operating parameters, including typical parameters must be made by customer's tec hnical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBse mi purchasing terms and conditions, including but not limited to warranty herein. Unl ess expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or l ife sustaining applications or any other application. Wherein VBsemi product failure could lead to personal inj ury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and oth er terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by e stoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product nam es and trademarks referred to herein are trademarks of their respective representatives will be all. Mate rialCategoryPolicy Tai wan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be oH S compliant and meets the definition of restrictions under Directive of the European Parliament 201 1/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and ele ctronicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) Ple asenotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective2002/95/EC.We con firm that all products identified as consistent with the Directive 2002/95 / EC European Directive 201 1/65/. Tai wan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as hal ogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBs emi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products con formtoconfirmcompliancewithIEC61249-2-21standardlevelJS709A. A ll data sheet.com