UPA606T NEC | Alldatasheet

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© 1996 DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA606T The µPA606T is a mini-mold device provided with two MOS FET elements. It achieves high-density mounting and saves mounting costs.

FEATURES

  • Two MOS FET elements in package the same size as SC-59
  • Complement to µPA607T
  • Automatic mounting supported ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 50 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D(DC) 100 mA Drain Current (pulse) I D(pulse)* 200 mA Total Power Dissipation P T 300 (Total) mW Channel Temperature T ch 150 ˚C Storage Temperature T stg –55 to +150 ˚C * PW ≤ 10 ms, Duty Cycle ≤ 50 % Document No. G11253EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan PACKAGE DIMENSIONS (in millimeters) 0.65+0.1 –0.15 0.32+0.1 –0.05 0.16 +0.1 –0.06 2.8 ±0.2 1.5 0.95 1.9 0.8 2.9 ±0.2 1.1 to 1.4 0 to 0.1 0.95 PIN CONNECTION 654 123 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain 1 N-CHANNEL MOS FET (6-PIN 2 CIRCUITS) FOR SWITCHING

µPA606T ELECTRICAL CHARACTERISTICS (T A = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current I DSS VDS = 50 V, VGS = 0 – – 1.0 µA Gate Leakage Current I GSS VGS = ±20 V, VDS = 0 – – ±1.0 µA Forward Transfer Admittance |y fs|V DS = 5.0 V, ID = 10 mA 20 – – mS Drain to Source On-State ResistanceR DS(on)1 VGS = 4.0 V, ID = 10 mA – 19 30 Ω Drain to Source On-State ResistanceR DS(on)2 VGS = 10 V, ID = 10 mA – 15 25 Ω Input Capacitance C iss VDS = 5.0 V, VGS = 0, f = 1.0 MHz – 16 – pF Output Capacitance C oss –1 2–p F Reverse Transfer Capacitance C rss –3– p F Turn-On Delay Time t d(on) VGS(on) = 5.0 V, RG = 10 Ω , VDD = 5.0 V, – 17 – ns Rise Time t r ID = 10 mA, RL = 500 Ω –1 0–n s Turn-Off Delay Time t d(off) –6 8–n s Fall Time t f –3 8–n s SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (RESISTANCE LOADED) τ = 1 s Duty Cycle ≤ 1 % DUT PG. R G VGS τ µ R L VDD VGS ID VGS(on) 10 % 90 % 90 % 90 % 10 %10 % ID td(on) ton toff tr td(off) tf Gate voltage waveform Drain current waveform

µPA606T TYPICAL CHARACTERISTICS (T A = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Derating Factor - % TC - Case Temperature - ˚C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW TA - Ambient Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - mA VDS - Drain to Source Voltage - V TRANSFER CHARACTERISTICS ID - Drain Current - mA VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V Tch - Channel Temperature - ˚C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - mS ID - Drain Current - mA 100 40 60 80 100 120 1400 160 30 200 240 160 120 60 90 120 150 1800 100 07 23456 120 Pulsed measurement 4.0 V 3.5 V 3.0 V VGS = 2.5 V 1 000 246 VDS = 5 V Pulsed measurement TA = 75 ˚C 25 ˚C –25 ˚C 100 0.1 –30 150 0 3 06 09 0 1 2 0 VDS = 5 V ID = 1.0 Aµ 1 1 000 100 10 100 TA = 75 ˚C 25 ˚C –25 ˚C VDS = 5 V Pulsed measurement

µPA606T DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE R DS(on) - Drain to Source On-State Resistance - Ω VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT R DS(on) - Drain to Source On-State Resistance - Ω ID - Drain Current - mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE R DS(on) - Drain to Source On-State Resistance - Ω Tch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE C iss, Coss, Crss - Capacitance - pF VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns ID - Drain Current - mA SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Source to Drain Current - mA VSD - Source to Drain Voltage - V 1 100 31 0 3 0 100 ID = 10 mA Pulsed measurement 300 10 1 000 30 100 300 1 000 100 VGS = 10 V Pulsed measurement TA = 75 ˚C 25 ˚C –25 ˚C –30 150 0 60 12030 90 VGS = 10 V Pulsed measurement 0.1 100 11 0 100 0.1 VGS = 0 f = 1 MHz C oss C iss C rss 10 100 20 50 100 VDD = 5 V VGS = 5 V R G = 10 Ω td(off) tf tr td(on) 100 VGS = 0 Pulsed measurement 0.1

µPA606T REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E

µPA606T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard : Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special : Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific : Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11