UPA603T

UPA603T NEC | Alldatasheet

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© 1996 DATA SHEET MOS FIELD EFFECT TRANSISTOR µPA603T The µPA603T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs.

FEATURES

• Two MOS FET circuits in package the same size as SC-59
• Complement to µPA602T
• Automatic mounting supported ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS –50 V Gate to Source Voltage V GSS +16 V Drain Current (DC) I D(DC) –100 mA Drain Current (pulse) I D(pulse)* –200 mA Total Power Dissipation P T 300 (Total) mW Channel Temperature T ch 150 ˚C Storage Temperature T stg –55 to +150 ˚C * PW ≤ 10 ms, Dury Cycle ≤ 50 % Document No. G11250EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan PACKAGE DIMENSIONS (in millimeters) 0.32+0.1 –0.05 1.5 2.8 ±0.2 0.95 0.95 1.9 2.9 ±0.2 0.16+0.1 –0.06 0.8 1.1 to 1.4 0 to 0.1 0.65+0.1 –0.5 PIN CONNECTION (Top view) P-CHANNEL MOS FET (6-PIN 2 CIRCUITS)

µPA603T ELECTRICAL CHARACTERISTICS (T A = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current I DSS VDS = –50 V, VGS = 0 – – –1.0 µA Gate Leakage Current I GSS VGS = +16 V, VDS = 0 – – +1.0 µA Forward Transfer Admittance |y fs|V DS = –5.0 V, ID = –10 mA 15 – – mS Drain to Source On-State ResistanceR DS(on)1 VGS = –4.0 V, ID = –10 mA – 60 100 Ω Drain to Source On-State ResistanceR DS(on)2 VGS = –10 V, ID = –10 mA – 40 60 Ω Input Capacitance C iss VDS = –5.0 V, VGS = 0, f = 1.0 MHz – 17 – pF Output Capacitance C oss –9– p F Reverse Transfer Capacitance C rss –1– p F Turn-On Delay Time t d(on) VGS(on) = –4.0 V, RG = 10 Ω ,– 4 5 – n s Rise Time t r VDD = –5.0 V, ID = –10 mA, RL = 500 Ω –7 5–n s Turn-Off Delay Time t d(off) –2 5–n s Fall Time t f –8 0–n s Marking: JA SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS PG. R G DUT R L VDD τ τ = 1 s Duty Cycle ≤ 1 % µ VGS Gate voltage waveform Drain current waveform V GS ID 10 % VGS(on) ID 90 % td(on) tr td(off) tf 10 % 10 % 90 % 90 %

µPA603T TYPICAL CHARACTERISTICS (T A = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Derating Factor - % 100 T C - Case Temperature - ˚C TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW 350 300 250 200 150 100 T A - Ambient Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - mA –120 –100 –80 –60 –40 –20 V DS - Drain to Source Voltage - V TRANSFER CHARACTERISTICS ID - Drain Current - mA –100 –10 –0.1 –0.01 –0.001 VGS - Gate to Source Voltage - V GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(off) - Gate Cut-off Voltage - V –30 –2.4 –2.2 –2.0 –1.8 –1.6 –1.4 –1.2 T ch - Channel Temperature - ˚C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT |yfs| - Forward Transfer Admittance - mS 100 ID - Drain Current mA Free air VDS = –5.0 V Pulsed measurement 4020 60 80 100 120 140 160 25 50 75 100 125 150 Per one unit Total Pulsed measurement –8 V –6 V –4 V VGS = –2 V –5 –10 –15 TA = 150 ˚C 75 ˚C 25 ˚C –25 ˚C 0 30 60 90 120 150 VDS = –5.0 V ID = –1 Aµ 50 VDS = –5.0 V 25 ˚C 75 ˚C 150 ˚C TA = –25 ˚C

µPA603T DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE R DS(on) - Drain to Source On-State Resistance - Ω 100 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT R DS(on) - Drain to Source On-State Resistance - Ω 150 100 ID - Drain Current - mA DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE R DS(on) - Drain to Source On-State Resistance - Ω –30 140 120 100 T ch - Channel Temperature - ˚C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE C iss, Coss, Crss - Capacitance - pF –0.5 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 500 ID - Drain Current - mA SOURCE TO DRAIN DIODE FORWARD VOLTAGE ISD - Source to Drain Current - mA 0.5 100 0.1 VSD - Source to Drain Voltage - V Pulsed measurement ID = –1 mA ID = –10 mA TA = 150 ˚C 75 ˚C 25 ˚C –25 ˚C VGS = –4 V Pulsed measurement 0 30 60 90 120 150 VGS = –4 V ID = –10 mA 100 0.5 0.2 0.1 C iss C oss C rss VGS = 0 f = 1 MHz 200 100 td(on) tf td(off) VDD = –5.0 V VGS = –4 V R G = 10 Ω 0.6 0.7 0.8 0.9 1 tr

µPA603T REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E

µPA603T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard : Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special : Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific : Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11