UPA503T NEC | Alldatasheet

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MOS FIELD EFFECT TRANSISTOR µPA503T P-CHANNEL MOS FET (5-PIN 2 CIRCUITS) Document No. G11239EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan The µPA503T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs.

FEATURES

  • Two source common MOS FET circuits in package the same size as SC-59
  • Complement to µPA502T
  • Automatic mounting supported ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS –50 V Gate to Source Voltage V GSS +16 V Drain Current (DC) I D(DC) –100 mA Drain Current (pulse) I D(pulse)* –200 mA Total Power Dissipation P T 300 (TOTAL) mW Channel Temperature T ch 150 ˚C Storage Temperature T stg –55 to +150 ˚C * PW ≤ 10 ms, Duty Cycle ≤ 50 % 2.9 ± 0.2 1.9 2.8 ± 0.2 1.5 0.65 0.95 0.8 1.1 to 1.4 0.95 +0.1 –0.15 0.32 +0.1 –0.05 0.16 0 to 0.1 +0.1 –0.06 PACKAGE DIMENSIONS (in millimeters) PIN CONNECTION (Top view)

µPA503T ELECTRICAL CHARACTERISTICS (T A = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain Cut-off Current I DSS VDS = –50 V, VGS = 0 –1.0 µA Gate Leakage Current I GSS VGS = +16 V, VDS = 0 +10 µA Forward Transfer Admittance | y fs |V DS = –5.0 V, ID = –10 mA 15 mS Drain to Source On-State ResistanceR DS(on)1 VGS = –4.0 V, ID = –10 mA 60 100 Ω Drain to Source On-State ResistanceR DS(on)2 VGS = –10 V, ID = –10 mA 40 60 Ω Input Capacitance C iss VDS = –5.0 V, VGS = 0, f = 1.0 MHz 17 pF Output Capacitance C oss 9p F Reverse Transfer Capacitance C rss 1p F Turn-On Delay Time t d(on) VGS(on) = –4.0 V, RG = 10 Ω 45 ns Rise Time t r VDD = –5.0 V, ID = –10 mA 75 ns Turn-Off Delay Time t d(off) R L = 500 Ω 25 ns Fall Time t f 80 ns Marking: CA SWITCHING TIME MEASUREMENT CIRCUIT AND MEASUREMENT CONDITIONS (RESISTANCE LOADED) PG. R G R L VDD DUT VGS τ = 1 sµ Duty cycle ≤ 1 % Gate Voltage Waveform Drain Current Waveform VGS 10 % 90 % VGS(on) 10 %0 ID ID 90 % 90 % td(on) tr td(off) tf 10 % τ

µPA503T TYPICAL CHARACTERISTICS (T A = 25 ˚C) dT - Derating factor - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 TC - Case Temperature - ˚C 20 40 80 100 140 160 PT - Total Power Dissipation - mW TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE Free air 300 250 200 150 100 TA - Ambient Temperature - ˚C 25 50 75 100 125 150 350 Per one unit TOTAL 60 120 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE –120 –100 –80 –60 –40 –20 VDS - Drain to Source Voltage - V V GS - Gate to Source Voltage - V ID - Drain Current - mA TRANSFER CHARACTERISTICS –100 –10 –0.1 –0.01 –0.0010 –5 –10 –15 ID - Drain Current - mA –10 V –8 V –6 V VGS = –4 V Pulsed measurement VDS = –5.0 V Pulsed measurement TA = 150 ˚C 75 ˚C 25 ˚C –25 ˚C GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE –2.4 –2.2 –2.0 –1.8 –1.6 –1.4 –30 0 30 60 90 120 150 –1 –2 –5 –10 –20 –50 –100 T ch - Channel Temperature - ˚C VGS(off) - Gate Cut-off Voltage - V VDS = –5.0 V ID = –1 Aµ FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 I D - Drain Current - mA |yfs| - Forward Transfer Admittance - mS –1.2 VDS = –5.0 V TA = –25 ˚C 25 ˚C 75 ˚C 150 ˚C

µPA503T DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 VGS - Gate to Source Voltage - V I D - Drain Current - mA R DS(on) - Drain to Source On-State Resistance - Ω ID = –1 mA ID = –10 mA Pulsed measurement DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 150 100 R DS(on) - Drain to Source On-State Resistance - Ω VGS = –4 V Pulsed measurement TA = 150 ˚C 75 ˚C 25 ˚C –25 ˚C R DS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 140 120 100 T ch - Channel Temperature - ˚C –30 0 30 60 90 120 150 C iss, Coss, Crss - Capacitance - pF CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100 0.5 0.2 0.1 VDS - Drain to Source Voltage - V VGS = –4 V ID = –10 mA Pulsed measurement td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS 500 200 100 ID - Drain Current - mA VSD - Source to Drain Voltage - V VGS = 0 f = 1 MHz C iss C rss C oss tr td(on) td(off) tf VDD = –5.0 V VGS = –4 V R G = 10 Ω ID - Drain Current - mA SOURCE TO DRAIN DIODE FORWARD VOLTAGE 100 0.1

µPA503T REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E

µPA503T No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard : Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special : Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific : Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11