UPA3060S THINKISEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

30.0 Ampere,600Volt SwitchMode Single Fast Recovery Epitaxial Diode

© 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 1/3 Internal Configuration Cathode(Bottom Side Metal Heatsink) Cathode Anode Base Backside

  • Ultrafast Recovery Time
  • Soft Recovery Characteristics
  • Low Recovery Loss
  • Low Forward Voltage
  • High Surge Current Capability
  • Low Leakage Current APPLICATION GENERAL DESCRIPTION Freewheeling, Snubber, Clamp Inversion Welder PFC Plating Power Supply Ultrasonic Cleaner and Welder Converter & Chopper UPS PRODUCT FEATURE UPA3060S using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics. ABSOLUTE MAXIMUM RATINGS T C =25°C unless otherwise specified

ELECTRICAL CHARACTERISTICS

T C =25°C unless otherwise specified Symbol Parameter Test Conditions Values Unit V R Maximum D.C. Reverse Voltage 600 V V RRM Maximum Repetitive Reverse Voltage 600 V I F(AV) Average Forward Current T C =110°C, Per Diode 30 A I F(RMS) RMS Forward Current T C =110°C, Per Diode 42 A I FSM Non-Repetitive Surge Forward Current T J =45°C, t=10ms, 50Hz, Sine 300 A P D Power Dissipation 156 W T J Junction Temperature -40 to +150 °C T STG Storage Temperature Range -40 to +150 °C Torque Module-to-Sink Recommended （M3） 1.1 N·m R θJC Thermal Resistance Junction-to-Case 0.8 °C /W Weight 6.0 g Symbol Parameter Test Conditions Min. Typ. Max. Unit V R =600V -- -- 15 µA I RM Reverse Leakage Current V R =600V, T J I F =30A -- 2.0 -- V V F Forward Voltage I F =30A, T J t rr Reverse Recovery Time I F =1A, V R =30V, di F /dt=-200A/μs -- 22 -- ns t rr Reverse Recovery Time -- 35 -- ns I RRM Max. Reverse Recovery Current V R =300V, I F =30A di F /dt=-200A/μs, T J =25°C -- 2.5 -- A t rr Reverse Recovery Time -- 110 -- ns I RRM Max. Reverse Recovery Current V R =300V, I F =30A di F /dt=-200A/μs, T J =125°C -- 7.0 -- A Rev.07C

. . . I F (A) V F （V） Fig1. Forward Voltage Drop vs Forward Current T J =125°C T J =25°C di F /dt（A/μs） Fig2. Reverse Recovery Time vs di F /dt 1000800 600 40020000 t r r (ns) 120 160 200 V R =300V T J =125°C I F =60 A I F =15 A I F =30 A I RRM (A) di F /dt（A/μs） Fig3. Reverse Recovery Current vs di F /dt 0 0 200 400 600 800 1000 di F /dt（A/μs） Fig4. Reverse Recovery Charge vs di F /dt 1000800 600 40020000 200 Q r r (nc) 400 600 800 V R =300V T J =125°C I F =60A I F =15A I F =30 A V R =300V T J =125°C I F =60A I F =30 A I F =15A K f Duty 0.5 0.2 0.1 0.05 Single Pulse 0.2 0.4 1.2 0.6 Z thJC K/W 0.8 I RRM Q r r t r r T J (°C) Fig5. Dynamic Parameters vs Junction Temperature 0 25 50 100 150 1 10 Rectangular Pulse Duration (seconds) Fig6. Transient Thermal Impedance 75 125 1.5 1000 UPA3060S © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/3Rev.07C

Fig7. Diode Reverse Recovery Test Circuit and Waveform I F dI F /dt t rr I RRM Q rr 0.25 I RRM 0.9 I RRM Ejector pin hole thickness (h) D A be c L H Ø SYMBOL DIMENSIONS IN MILLIMETERS DIMENSIONS IN INCHES MIN. MAX. MIN. MAX. A 4.850 5.150 0.191 0.200 A1 2.200 2.600 0.087 0.102 b 1.000 1.400 0.039 0.055 b1 1.800 2.200 0.071 0.087 c 0.500 0.700 0.020 0.028 c1 1.900 2.100 0.075 0.083 D 15.450 15.750 0.608 0.620 E1 3.500 Ref. 0.138 Ref. E2 3.600 Ref. 0.142 Ref. L 40.900 41.300 1.610 1.626 L1 24.800 25.100 0.976 0.988 L2 20.300 20.600 0.799 0.811 Ø 7.100 7.300 0.280 0.287 e 10.900 Typ. 0.429 Typ. H 5.980 Typ. 0.235 Typ. h 0.000 0.300 0.000 0.012 TO-247-2L DIMENSIONS UPA3060S © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 3/3Rev.07C