UPA2707TP-E1-AZ

UPA2707TP NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR µ PA2707TP SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. G17035EJ1V0DS00 (1st edition) Date Published June 2005 NS CP(K) Printed in Japan 2004

DESCRIPTION

The µ PA2707TP which has a heat spreader is N- channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computer.

FEATURES

• Low on-state resistance R DS(on)1 = 4.3 mΩ MAX. (VGS = 10 V, ID = 9.0 A) R DS(on)2 = 5.6 mΩ MAX. (VGS = 4.5 V, ID = 9.0 A)
• Low Ciss: Ciss = 6600 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power HSOP8) ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) V DSS 30 V Gate to Source Voltage (VDS = 0 V) V GSS ±20 V Drain Current (DC) I D(DC) ±42 A Drain Current (pulse) Note1 ID(pulse) ±76 A Total Power Dissipation (TC = 25°C) P T1 40 W Total Power Dissipation Note2 PT2 4.3 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C Single Avalanche Current Note3 IAS 19 A Single Avalanche Energy Note3 EAS 36 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm, PW =10 sec 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V THERMAL RESISTANCE Channel to Ambient Note Rth(ch-A) 96.2 °C/W Channel to Case R th(ch-C) 3.13 °C/W Note Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm

ORDERING INFORMATION

µ PA2707TP-E1 Power HSOP8 µ PA2707TP-E1-AZ Note Power HSOP8 µ PA2707TP-E2 Power HSOP8 µ PA2707TP-E2-AZ Note Power HSOP8 Note Pb-free (This product does not contain Pb in external electrode.)

Data Sheet G17035EJ1V0DS 2 µ PA2707TP ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS V DS = 30 V, VGS = 0 V 10 µA Gate Leakage Current I GSS VGS = ±20 V, VDS = 0 V ±100 nA Gate Cut-off Voltage V GS(off) V DS = 10 V, ID = 1 mA 1.0 2.5 V Forward Transfer Admittance Note | yfs | V DS = 10 V, ID = 10 A 12 S Drain to Source On-state Resistance Note RDS(on)1 V GS = 10 V, ID = 10 A 3.3 4.3 m Ω R DS(on)2 V GS = 4.5 V, ID = 10 A 4.1 5.6 m Ω Input Capacitance C iss V DS = 10 V 6600 pF Output Capacitance C oss V GS = 0 V 970 pF Reverse Transfer Capacitance C rss f = 1 MHz 530 pF Turn-on Delay Time t d(on) V DD = 15 V, ID = 10 A 24 ns Rise Time t r V GS = 10 V 29 ns Turn-off Delay Time t d(off) R G = 10 Ω 130 ns Fall Time t f 39 ns Total Gate Charge Q G V DD = 15 V 52 nC Gate to Source Charge Q GS V GS = 5 V 16 nC Gate to Drain Charge Q GD I D = 19 A 18 nC Body Diode Forward Voltage Note VF(S-D) I F = 19 A, VGS = 0 V 0.8 V Reverse Recovery Time t rr I F = 19 A, VGS = 0 V 42 ns Reverse Recovery Charge Q rr di/dt = 100 A/ µs 41 nC Gate Resistance R G f = 1 MHz 1.2 Ω Note Pulsed TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS τ = 1 s Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% µ

Data Sheet G17035EJ1V0DS 3 µ PA2707TP TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - ˚C dT - Percentage of Rated Power - % 04 0 20 60 100 140 80 120 160 120 100 I D - Drain Current - A 0.1 100 0.01 0.1 1 10 100 ID(pulse) 10 ms ID(DC) 1 ms DC TC = 25°C Single pulse RDS(on) Limited (at VGS = 10 V) PW = 100 µsPower Dissipation Limited VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH r th(t) - Transient Thermal Resistance - °C/W 0.01 0.1 100 1000 Rth (ch -C) = 3.13°C/W Rth (ch -A)= 96.2°C/W Single pulse Rth(ch-A) : M ounted on galass epoxy board of 1 inch x 1 inch x 0.8 mm, TA = 2 5°C Rth(ch-C) : TC = 2 5°C PW - Pulse Width - s DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS I D - Drain Current - A VGS = 10 V Pulsed 4.5 V VDS - Drain to Source Voltage - V I D - Drain Current - A 0.01 0.1 100 012345 Pulsed VDS = 10 V Tch = −55°C 25°C 75°C 150°C V GS - Gate to Source Voltage - V 100 µ 1 m 10 m 100 m 1 10 100 1000

Data Sheet G17035EJ1V0DS 4 µ PA2707TP GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT V GS(off) - Gate Cut-off Voltage - V -50 0 50 100 150 VDS = 10 V Pulsed Tch - Channel Temperature - °C | y fs | - Forward Transfer Admittance - S 0.1 100 0.01 0.1 1 10 100 VDS = 10 V Puls ed Tch = −55°C 25°C 75°C 150°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 0.1 1 10 100 10 V Pulsed VGS = 4.5 V ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 0 5 10 15 20 ID = 10 A Pulsed VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ -50 0 50 100 150 VGS = 4.5 V ID = 10 A Pulsed 10 V Tch - Channel Temperature - °C C iss, Coss, Crss - Capacitance - pF 100 1000 10000 0.1 1 10 100 VGS = 0 V f = 1 MHz Ciss Coss Crss V DS - Drain to Source Voltage - V

Data Sheet G17035EJ1V0DS 5 µ PA2707TP SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS t d(on), tr, td(off), tf - Switching Time - ns 100 1000 0.1 1 10 100 VDD = 15 V VGS = 10 V RG = 10 Ω tr tf td(on) td(off) I D - Drain Current - A V DS - Drain to Source Voltage - V 0 1 02 03 04 05 0 VDS VGS 6 V 15 V VDD = 24 V Q G - Gate Charge - nC V GS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLT AGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT I F - Diode Forward Current - A 0.01 0.1 100 Puls ed VGS = 10 V 0 V VF(S-D) - Source to Drain Voltage - V t rr - Reverse Recovery Time - ns 100 1000 0.1 1 10 100 di/dt = 100 A/µ s VGS = 0 V IF - Diode Forward Current - A SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR I AS - Single Avalanche Current - A 0.1 100 0.01 0.1 1 10 IAS = 19 A VDD = 15 V RG = 25 Ω VGS = 20 → 0 V Starting Tch = 25°C EAS = 36 mJ L - Inductive Load - mH Energy Derating Factor - % 100 120 25 50 75 100 125 150 VDD = 15 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 19 A Starting Tch - Starting Channel Temperature - °C

Data Sheet G17035EJ1V0DS 6 µ PA2707TP PACKAGE DRAWING (Unit: mm) Power HSOP8 1.27 TYP. 0.12 M 6.0 ±0.3 1.49 ±0.21 2.0 ±0.2 4.4 ±0.150.8 ±0.2 0.40 +0.10 –0.05 5.2+0.17 –0.2 0.05 ±0.05 1.44 TYP. 1.1 ±0.2 0.15 +0.10 –0.05 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9: Drain 4.1 MAX. 2.9 MAX. S0.10 S EQUIVALENT CIRCUIT Source Body DiodeGate Drain Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.

µ PA2707TP The information in this document is current as of June, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer- designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) M8E 02. 11-1 (1) (2) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "Standard": "Special": "Specific":