UPA2706GR

UPA2706GR NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR µµµµPA2706GR SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. G16236EJ1V0DS00 (1st edition) Date Published April 2003 NS CP(K) Printed in Japan 2003

DESCRIPTION

The µPA2706GR is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

FEATURES

• Low on-state resistance RDS(on)1 = 15 mΩ MAX. (VGS = 10 V, ID = 5.5 A) RDS(on)2 = 22.5 mΩ MAX. (VGS = 4.5 V, ID = 5.5 A)
• Low Ciss: Ciss = 660 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power SOP8)

ORDERING INFORMATION

µ PA2706GR Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected) Drain to Source Voltage (VGS = 0 V) V DSS 30 V Gate to Source Voltage (VDS = 0 V) V GSS ±20 V Drain Current (DC) I D(DC) ±11 A Drain Current (pulse) Note1 ID(pulse) ±44 A Total Power Dissipation (TA = 25°C) Note2 PT 2.0 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to + 150 °C Single Avalanche Current Note3 IAS 11 A Single Avalanche Energy Note3 EAS 12.1 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on ceramic substrate of 1200 mm2 x 2.2 mm 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω , L = 100 µH, VGS = 20 → 0 V Caution Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 1.27 0.12 M 6.0 ±0.3 4.4 0.40+0.10 –0.05 0.78 MAX. 0.05 MIN. 1.8 MAX. 1.44 0.8 0.5 ±0.2 0.15+0.10 –0.05 5.37 MAX. 0.10 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain

µµµµPA2706GR ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current I GSS VGS = ±20 V, VDS = 0 V ±10 µA Gate Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V Forward Transfer Admittance Note | yfs |V DS = 10 V, ID = 5.5 A 4.5 S Drain to Source On-state Resistance Note RDS(on)1 VGS = 10 V, ID = 5.5 A 11 15 m Ω RDS(on)2 VGS = 4.5 V, ID = 5.5 A 16 22.5 m Ω RDS(on)3 VGS = 4.0 V, ID = 5.5 A 19 29 m Ω Input Capacitance C iss VDS = 10 V 660 pF Output Capacitance C oss VGS = 0 V 270 pF Reverse Transfer Capacitance C rss f = 1 MHz 83 pF Turn-on Delay Time t d(on) VDD = 15 V, ID = 5.5 A 9 ns Rise Time t r VGS = 10 V 5 ns Turn-off Delay Time t d(off) RG = 10 Ω 29 ns Fall Time t f 6n s Total Gate Charge Q G VDD = 15 V 7.1 nC Gate to Source Charge Q GS VGS = 5 V 2.1 nC Gate to Drain Charge Q GD ID = 11 A 3.1 nC Body Diode Forward Voltage Note VF(S-D) IF = 11 A, VGS = 0 V 0.84 V Reverse Recovery Time t rr IF = 11 A, VGS = 0 V 25 ns Reverse Recovery Charge Q rr di/dt = 100 A/µs 17 nC Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. R G = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. R L VDD TEST CIRCUIT 2 SWITCHING TIME R G PG. IG = 2 mA 50 Ω D.U.T. R L VDD ID VDD IAS VDS BV DSS Starting Tch VGS = 1 s Duty Cycle ≤ 1% τ µ τ VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%

Data Sheet G16236EJ1V0DS 3 µµµµPA2706GR TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C PT - Total Power Dissipation - W 0.4 0.8 1.2 1.6 2.4 2.8 0 25 50 75 100 125 150 175 Mounted on ceramic substrate of 1200 mm2 x 2.2 mm TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 0.01 0.1 100 0.01 0.1 1 10 100 ID(pulse) 10 ms Power Dissipation Limited ID(DC) PW = 100 µs 1 ms RDS(on) Limited (at VGS = 10 V) 100 ms TA = 25°C Single Pulse Mounted on ceramic substrate of 1200 mm2 x 2.2 mm DC VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH Rth(t) - Transient Thermal Resistance - °C/W 0.1 100 1000 Mounted on ceramic substrate of 1200 mm2 × 2.2 mm Single Pulse TA = 25°C Rth(ch-A) = 62.5°C/W PW - Pulse Width - s 1 m 10 m 100 m 1 10 100 1000

µµµµPA2706GR DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 00 . 511 . 52 4.0 V Pulsed VGS = 10 V 4.5 V VDS - Drain to Source Voltage - V ID - Drain Current - A 0.01 0.1 100 012345 Pulsed VDS = 10 V TA = −55°C 25°C 75°C 150°C VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate Cut-off Voltage - V 0.5 1.5 2.5 - 50 0 50 100 150 VDS = 10 V ID = 1 mA Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S0.1 100 0.01 0.1 1 10 100 VDS = 10 V Pulsed TA = −55°C 25°C 75°C 150°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 0.1 1 10 100 4.5 V Pulsed 10 V VGS = 4.0 V ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 0 5 10 15 20 Pulsed ID = 5.5 A VGS - Gate to Source Voltage - V

Data Sheet G16236EJ1V0DS 5 µµµµPA2706GR DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ - 50 0 50 100 150 10 V 4.5 V VGS = 4.0 V Pulsed Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF 100 1000 0.01 0.1 1 10 100 VGS = 0 V f = 1 MHz Ciss Crss Coss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 100 1000 0.1 1 10 100 VDD = 15 V VGS = 10 V RG = 10 Ω tr tf td(off) td(on) ID - Drain Current - A VDS - Drain to Source Voltage - V 02468 ID = 11 A VDS VGS VDD = 24 V 15 V 6 V QG - Gate Charge - nC VGS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT IF - Diode Forward Current - A 0.01 0.1 100

0 VVGS = 10 V

VF(S-D) - Source to Drain Voltage - V trr - Reverse Recovery Time - ns 100 1000 11 0 1 0 0 VGS = 0 V di/dt = 100 A/µs IF - Diode Forward Current - A

µµµµPA2706GR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR IAS - Single Avalanche Current - A 100 0.00001 0.0001 0.001 0.01 VDD = 15 V VGS = 20 → 0 V RG = 25 Ω Starting Tch = 25°C EAS = 12.1 mJ L - Inductive Load - H Energy Derating Factor - % 100 120 25 50 75 100 125 150 VDD = 15 V VGS = 20 → 0 V RG = 25 Ω IAS ≤ 11 A Starting Tch - Starting Channel Temperature - °C

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