UPA2680T1E

UPA2680T1E NEC | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOSFET WITH SCHOTTKY BARRIER DIODE μ PA2680T1E N-CHANNEL MOSFET WITH SCHOTTKY BARRIER DIODE FOR SWITCHING DATA SHEET Document No. G17661EJ2V0DS00 (2nd edition) Date Published May 2007 NS CP(K) Printed in Japan 2006 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DESCRIPTION

The μ PA2680T1E is a switching device, which can be driven directly by a 4.5 V power source. The μ PA2680T1E incorporates a MOSFET which features a low on-state resistance and excellent switching characteristics and a low forward voltage Schottky Barrier Diode, and is suitable for applications such as DC/DC converter of portable machine and so on.

FEATURES

• 4.5 V drive available MOSFET
• Low on-state resistance MOSFET RDS(on)1 = 38 mΩ TYP. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 44 mΩ TYP. (VGS = 4.5 V, ID = 3.0 A)
• Low forward voltage Schottky Barrier Diode VF = 0.36 V TYP. (IF = 1.0 A)

ORDERING INFORMATION

μ PA2680T1E 6LD3x3MLP Marking: A2680 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. VESD = ±150 V TYP. (C = 200 pF, R = 0 Ω, Single Pulse) PIN CONNECTION (Top View) 1: Anode 2: Source/Cathode (Heat sink 2) 3: Gate 4: Drain (Heat sink 1) 5: Source/Cathode (Heat sink 2) 6: Anode

μ PA2680T1E ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) MOSFET Drain to Source Voltage (VGS = 0 V) VDSS V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V Drain Current (DC) Note1 ID(DC) ±3.0 A Drain Current (pulse) Note2 ID(pulse) ±12.0 A Total Power Dissipation Note1 PT 1.3 W Channel Temperature Tch 150 Storage Temperature Tstg −55 to +150 Notes 1. Mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board (Cu pad: 322 mm2 x 70 μm, FR-4: 1452 mm2 x 1.6 mmt) 2. PW ≤ 10 μs, Duty Cycle ≤ 1% Schottky Barrier Diode Repetitive Peak Reverse Voltage VRRM V Average Forward Current Note IF 1.8 A Total Power Dissipation Note PT 1.2 W Junction Temperature TJ 125 Storage Temperature Tstg −55 to +150 Note Square wave, Duty Cycle = 50% Mounted on a 1 in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick FR-4 board (Cu pad: 322 mm2 x 70 μm, FR-4: 1452 mm2 x 1.6 mmt) SBD side: 85°C/W when mounted on a 1 in2 pad of 2 oz copper FET side: 97°C/W when mounted on a 1 in2 pad of 2 oz copper

μ PA2680T1E ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) MOSFET CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V μA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 μA Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 0.6 2.0 V Forward Transfer Admittance Note | yfs | VDS = 10 V, ID = 1.5 A 1.0 3.6 S Drain to Source On-state Resistance Note RDS(on)1 VGS = 10 V, ID = 3.0 A mΩ RDS(on)2 VGS = 4.5 V, ID = 3.0 A mΩ Input Capacitance Ciss VDS = 10 V, 190 pF Output Capacitance Coss VGS = 0 V, pF Reverse Transfer Capacitance Crss f = 1.0 MHz pF Turn-on Delay Time td(on) VDD = 10 V, ID = 1.5 A, 9.0 ns Rise Time tr VGS = 4.5 V, 7.0 ns Turn-off Delay Time td(off) RG = 10 Ω ns Fall Time tf 4.0 ns Total Gate Charge QG VDD = 16 V, 3.1 nC Gate to Source Charge QGS VGS = 4.5 V, 0.6 nC Gate to Drain Charge QGD ID = 2.0 A 1.1 nC Body Diode Forward Voltage Note VF(S-D) IF = 3.0 A, VGS = 0 V 0.85 V Note Pulsed: PW ≤ 350 μs, Duty Cycle ≤ 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE PG. RG VGS D.U.T. RL VDD τ = 1 s μ Duty Cycle ≤ 1% VGS Wave Form ID Wave Form VGS 10% 90% VGS 10% ID 90% 90% td(on) tr td(off) t f 10% τ ID ton toff PG. 50 Ω D.U.T. RL VDD IG = 2 mA Schottky Barrier Diode CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Forward Voltage VF IF = 1.0 A 0.36 0.39 V Reverse Current IR VR = 5 V, TA = 100°C mA Terminal Capacitance CT f = 1.0 MHz, VR = 10 V pF

μ PA2680T1E MOSFET TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % 100 120 100 125 150 175 TA - Ambient Temperature - °C PT - Total Power Dissipation - W 0.25 0.5 0.75 1.25 1.5 100 125 150 175 Mounted on FR-4 board of 1452 mm2 x 1.6 mmt TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 0.01 0.1 100 0.1 100 ID(DC) ID(pulse) 100 ms 10 ms DC Single Pulse Mounted on FR-4 board of 1452 mm2 x 1.6 mmt RDS(on) Limited (VGS = 4.5 V) PW = 1i m is VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(J-A) - Transient Thermal Resistance - °C/W 0.1 100 1000 MOSFET SBD Single Pulse Mounted on FR-4 board of 1452 mm2 x 1.6 mmt Cu pad of 645 mm2 x 70 μm (1 in2) PW - Pulse Width - s 100 μ 1 m 10 m 100 m 1 10 100 1000

μ PA2680T1E DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 0.2 0.4 0.6 0.8 VGS = 10 V Pulsed 4.5 V 2.5 V VDS - Drain to Source Voltage - V ID - Drain Current - A 0.0001 0.001 0.01 0.1 0.5 1.5 2.5 VDS = 10 V Pulsed TA = 125°C 75°C 25°C −25°C VGS - Gate to Source Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE VGS(th) - Gate to Source Threshold Voltage - V 0.5 0.7 0.9 1.1 1.3 1.5 -50 -25 100 125 150 VDS = VGS ID = 0.25 mA Tch - Channel Temperature - °C VGS(off) – Gate to Source Cut-off Voltage - V 0.5 0.7 0.9 1.1 1.3 1.5 -50 -25 100 125 150 VDS = 10 V ID = 1 mA Tch - Channel Temperature - °C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S 0.1 0.01 0.1 VDS = 10 V Pulsed TA = −25°C 25°C 75°C 125°C ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 100 0.01 0.1 10 V Pulsed 4.5 V VGS = 2.5 V ID - Drain Current - A

μ PA2680T1E DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE RDS(on) - Drain to Source On-state Resistance - mΩ 100 120 140 Pulsed ID = 3.0 A 1.5 A VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 100 -50 -25 100 125 150 10 V ID = 3.0 A Pulsed VGS = 4.5 V Tch - Channel Temperature - °C CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS Ciss, Coss, Crss - Capacitance - pF 100 1000 0.01 0.1 100 Ciss VGS = 0 V f = 1.0 MHz Coss Crss VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 100 0.1 VDD = 10 V VGS = 4.5 V RG = 10 Ω td(off) td(on) tr tf ID - Drain Current - A DYNAMIC INPUT CHARACTERISTICS SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS - Gate to Source Voltage - V 0.5 1.5 2.5 16 V ID = 2.0 A VDD = 10 V 4 V QG - Gate Charge - nC IF - Diode Forward Current - A 0.01 0.1 0.4 0.6 0.8 VGS = 0 V Pulsed VF(S-D) - Source to Drain Voltage - V

μ PA2680T1E SCHOTTKY BARRIER DIODE TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise specified) FORWARD CURRENT vs. FORWARD VOLTAGE REVERSE CURRENT vs. REVERSE VOLTAGE IF - Forward Current - A 0.01 0.1 0.2 0.4 0.6 0.8 TA = 125°C 75°C 25°C −25°C VF - Forward Voltage - V IR - Reverse Current - mA 0.01 0.1 100 TA = 125°C 100°C 75°C 25°C VR - Reverse Voltage - V TERMINAL CAPACITANCE vs. REVERSE VOLTAGE CT - Terminal Capacitance - pF 100 1000 0.1 100 f = 1.0 MHz VR - Reverse Voltage - V <R>

μ PA2680T1E PACKAGE DRAWING (Unit: mm) 0.9 ±0.1 1.6 ±0.05

0.2 RFE

0.1 0.4 ±0.05 0.2 MIN. 0.4 0.4 ±0.05 0.05 0.02 −0.02 +0.03 0.15 C A B C 0.95 1.1 0.75 0.95 2 x

0.15 C 2 x

0.08 C 6 x 0.1 C Heat sink 2 Heat sink 1 PIN CONNECTION 1: Anode 2: Source/Cathode (Heat sink 2) 3: Gate 4: Drain (Heat sink 1) 5: Source/Cathode (Heat sink 2) 6: Anode

μ PA2680T1E The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer- designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) M8E 02. 11-1 (1) (2) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "Standard": "Special": "Specific":