UPA2561T1H RENESAS | Alldatasheet
Document overview
- PDF pages: 7
Technical content
Features
- 2.5 V drive available
- Low on-state resistance ⎯ RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2 A) ⎯ RDS(on)2 = 65 mΩ MAX. (VGS = 2.5 V, ID = 2 A) Package Drawing (Unit: mm) Equivalent Circuit 1 4 2.9±0.1 0.17±0.05 0.8±0.05 2.8±0.1 2.4±0.1
0.05 M S A
S A0.65 1: Source 2: Gate 7, 8: Drain 3: Source 4: Gate 5, 6: Drain
Ordering Information
Part No. Lead Plating Packing Package μ PA2561T1H-T1-ATNote μ PA2561T1H-T2-ATNote Pure Sn 8 mm Embossed Taping 3000 p/reel 8-pin VSOF (2429) Note: This product does not contain Pb in external electrode and other parts. Marking: 2561 Absolute Maximum Ratings (TA = 25°C) Item Symbol Ratings Unit Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±12 V Drain Current (DC) ID(DC) ±4.5 A Drain Current (pulse) Note1 I D(pulse) ±18 A Total Power Dissipation (1 unit, 5s)Note2 P T1 1.5 W Total Power Dissipation (2 unit, 5s) Note2 P T2 2.2 W Channel Temperature Tch 150 °C Storage Temperature Tstg -55 to + 150 °C Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1% 2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt (1/2 Circuit) R07DS0006EJ0100 Rev.1.00 Jul 08, 2010
μ PA2561T1H Chapter Title R07DS0006EJ0100 Rev.1.00 Page 2 of 5 Jul 08, 2010 Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with caution for electrostatic discharge. Electrical Characteristics (TA = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero Gate Voltage Drain Current I DSS 1 μA V DS = 20 V, VGS = 0 V Gate Leakage Current IGSS ±10 μA VGS = ±12 V, VDS = 0 V Gate to Source Cut-off Voltage VGS(off) 0.5 1.5 V V DS = 10 V, ID = 1 mA Forward Transfer Admittance Note | y fs | 2.0 S V DS = 10 V, ID = 2 A RDS(on)1 29 50 m Ω V GS = 4.5 V, ID = 2 A Drain to Source On-state Resistance Note RDS(on)2 41 65 m Ω V GS = 2.5 V, ID = 2 A Input Capacitance Ciss 455 pF Output Capacitance Coss 75 pF Reverse Transfer Capacitance Crss 47 pF VDS = 10 V VGS = 0 V f = 1.0 MHz Turn-on Delay Time td(on) 8.0 ns Rise Time tr 8.0 ns Turn-off Delay Time td(off) 20 ns Fall Time tf 6.0 ns VDD = 10 V, ID = 2 A, VGS = 4.5 V, RG = 6 Ω Total Gate Charge QG 5.4 nC Gate to Source Charge QGS 0.9 nC Gate to Drain Charge QGD 1.6 nC VDD = 16 V, VGS = 4.5 V, ID = 4 A Diode Forward Voltage Note VF(S-D) 0.85 V I F = 4 A, VGS = 0 V Note: Pulsed TEST CIRCUIT 2 GATE CHARGETEST CIRCUIT 1 SWITCHING TIME PG. RG VGS D.U.T. RL VDD τ = 1 sμ Duty Cycle ≤ 1% VGS Wave Form VDS Wave Form VGS 10% 90% 10%0 VDS 90% td(on) tr td(off) t fτ ton toff PG. 50 Ω D.U.T. RL VDD IG = 2 mA
μ PA2561T1H Chapter Title R07DS0006EJ0100 Rev.1.00 Page 3 of 5 Jul 08, 2010 Typical Characteristics (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C PT - Total Power Dissipation - W 0.5 1.5 2.5 0 25 50 75 100 125 150 175 Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mm 2 units 1 unit TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID - Drain Current - A 0.01 0.1 100 0.1 1 10 100 RDS(on) Lim 1 ited (VGS = 4.5 V) ID(pul se) ID(DC) 300 μs 11ms110 m s1100 m s Single pulse Pow er Dissipation Limited 1.5 W (Mounted on FR-4 board of 25.4 mm × 25.4 mm × 0.8 mm, t=5s VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(j-A) - Transient Thermal Resistance - °C/W 100 1000 Single pulse Mounted on FR-4 board of 25.4 mm × 25.4 mm × 0.8 mm PW - Pulse Width - s 1 m 10 m 100 m 1 10 100 1000
μ PA2561T1H Chapter Title R07DS0006EJ0100 Rev.1.00 Page 4 of 5 Jul 08, 2010 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 0 0.4 0.8 1.2 1.6 2 VGS = 2.5 V 4.5 V Pulsed VDS - Drain to Source Voltage - V ID - Drain Current - A 0.0001 0.001 0.01 0.1 100 00 . 511 . 522 . 5 Pulsed VDS = 10 V TA = –25°C 0°C 25°C 75°C 125°C 150°C VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cut-off Voltage - V 0.5 1.5 -50 0 50 100 150 VDS = 10 V ID = 1 mA Tch - Channel Temperature - °C | yfs | - Forward Transfer Admittance - S 0.1 0.01 0.1 1 10 Pulsed VDS = 10 V TA = –25°C 75°C 125°C 150°C 0°C 25°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 120 160 200 1 10 100 Pulsed 4.5 V VGS = 2.5 V ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 120 160 200 02468 1 0 Pulsed ID = 2 A VGS - Gate to Source Voltage - V
μ PA2561T1H Chapter Title R07DS0006EJ0100 Rev.1.00 Page 5 of 5 Jul 08, 2010 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 100 -50 -25 0 25 50 75 100 125 150 175 Pulsed ID = 2 A VGS = 2.5 V 4.5 V Tch - Channel Temperature - °C Ciss, Coss, Crss - Capacitance - pF 100 1000 0.01 0.1 1 10 100 VGS = 0 V f = 1.0 MHz Crss Ciss Coss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS td(on), tr, td(off), tf - Switching Time - ns 100 0.1 1 10 100 VDD = 10 V VGS = 4.5 V RG = 6 Ω td(off) td(on) tf tr ID - Drain Current - A VGS - Gate to Source Voltage - V 01234567 ID = 4 A VDD = 16 V 10 V 4 V QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 0.1 100 00 .511 .5 Pulsed VGS = 0 V VF(S-D) - Source to Drain Voltage - V
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Description
Rev. Date Page Summary
1.00 Jul 08, 2010 - First Edition issued
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