UPA2502

UPA2502 RENESAS | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR µ PA2502 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. G16681EJ1V0DS00 (1st edition) Date Published September 2004 NS CP(K) Printed in Japan 2004

DESCRIPTION

The µ PA2502, which has a heat spreader, is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers.

FEATURES

• µ PA2502 has a thin surface mount package with a heat spreader. The land size is same as 8-pin TSSOP.
• Low on-state resistance R DS(on)1 = 12.0 mΩ MAX. (VGS = 10.0 V, ID = 7.0 A) R DS(on)2 = 18.0 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)
• Low Ciss: 760 pF TYP. (VDS = 10.0 V, VGS = 0 V)

ORDERING INFORMATION

µ PA2502TM 8PIN HWSON ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 30.0 V Gate to Source Voltage (VDS = 0 V) V GSS ±20.0 V Drain Current (DC) Note1 ID(DC) ±13.0 A Drain Current (pulse) Note2 ID(pulse) ±52.0 A Total Power Dissipation Note1 PT 2.7 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C Single Avalanche Current Note3 IAS 13.0 A Single Avalanche Energy Note3 EAS 16.9 mJ Notes 1. Mounted on FR-4 board of 25 cm2 x 1.6 mm, PW ≤ 10 sec 2. PW ≤ 10 µs, Duty Cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 15.0 V, RG = 25 Ω, VGS = 20.0 → 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 0.65 TYP. 3 ±0.1 3.15 ±0.15 6.4 ±0.1 5.8 ±0.1 0.25 −0.05 0.10 M +0.1 0.10 S 0 −0 +0.05 0.17 ±0.05 0.8 MAX. 2.2 ±0.2 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain

Data Sheet G16681EJ1V0DS 2 µ PA2502 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS V DS = 30.0 V, VGS = 0 V 1.0 µA Gate Leakage Current I GSS V GS = ±20.0 V, VDS = 0 V ±10.0 µA Gate Cut-off Voltage V GS(off) V DS = 10.0 V, ID = 1.0 mA 1.50 2.50 V Forward Transfer Admittance Note | yfs | V DS = 10.0 V, ID = 7.0 A 5 S Drain to Source On-state Resistance Note RDS(on)1 V GS = 10.0 V, ID = 7.0 A 9.3 12.0 m Ω R DS(on)2 V GS = 4.5 V, ID = 7.0 A 13.1 18.0 m Ω Input Capacitance C iss V DS = 10.0 V 760 pF Output Capacitance C oss V GS = 0 V 300 pF Reverse Transfer Capacitance C rss f = 1.0 MHz 100 pF Turn-on Delay Time t d(on) V DD = 15.0 V, ID = 7.0 A 14 ns Rise Time t r V GS = 10.0 V 3 ns Turn-off Delay Time t d(off) R G = 10 Ω 32 ns Fall Time t f 4 ns Total Gate Charge Q G V DD = 15.0 V 8.5 nC Gate to Source Charge Q GS V GS = 5.0 V 2.8 nC Gate to Drain Charge Q GD I D = 13.0 A 3.5 nC Body Diode Forward Voltage Note VF(S-D) I F = 13.0 A, VGS = 0 V 0.84 V Reverse Recovery Time t rr I F = 13.0 A, VGS = 0 V 27 ns Reverse Recovery Charge Q rr di/dt = 100 A/ µs 24 nC Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. RG = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. RL VDD TEST CIRCUIT 2 SWITCHING TIME RG PG. IG = 2 mA 50 Ω D.U.T. RL VDD ID VDD IAS VDS BVDSS Starting Tch VGS τ = 1 s Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10% µ

Data Sheet G16681EJ1V0DS 3 µ PA2502 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C P T - Total Power Dissipation - W 0.5 1.5 2.5 0 25 50 75 100 125 150 175 Mounted on FR-4 board of 25 cm2 x 1.6 mm, PW ≤ 10 sec TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA I D - Drain Current - A 0.01 0.1 100 1000 0.1 1 10 100 30 ms 10 ms ID(pulse) PW = 1 ms RDS(on) Limited (at VGS = 10 V) 10 s Single pulse Mounted on FR-4 board of 25 cm2 x 1.6 mm ID(DC) VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH r th(ch-A) - Transient Thermal Resistance - °C/W 0.1 100 1000 Single pulse Mounted on FR-4 board of 25 cm2 x 1.6 mm PW - Pulse Width - s 1 m 10 m 100 m 1 10 100 1000

Data Sheet G16681EJ1V0DS 4 µ PA2502 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS I D - Drain Current - A 0 0.2 0.4 0.6 0.8 1 Pulsed VGS = 10.0 V 4.5 V VDS - Drain to Source Voltage - V I D - Drain Current - A 0.001 0.01 0.1 100 12345 VDS = 10.0 V Pulsed TA = 125°C 75°C 25°C −25°C V GS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT V GS(off) - Gate Cut-off Voltage - V 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 VDS = 10.0 V ID = 1.0 mA Tch - Channel Temperature - °C | y fs | - Forward Transfer Admittance - S 0.01 0.1 100 0.01 0.1 1 10 100 VDS = 10.0 V Pulsed TA = −25°C 25°C 75°C 125°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 0.1 1 10 100 Pulsed 10.0 V VGS = 4.5 V ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 0 4 8 12 16 20 ID = 7.0 A Pulsed VGS - Gate to Source Voltage - V

Data Sheet G16681EJ1V0DS 5 µ PA2502 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ -50 0 50 100 150 ID = 7.0 A Pulsed VGS = 4.5 V 10.0 V Tch - Channel Temperature - °C C iss, Coss, Crss - Capacitance - pF 100 1000 10000 0.1 1 10 100 VGS = 0 V f = 1.0 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS t d(on), tr, td(off), tf - Switching Time - ns 100 1000 0.1 1 10 100 VDD = 15.0 V VGS = 10.0 V RG = 10 Ω td(off) td(on) tf tr ID - Drain Current - A V DS - Drain to Source Voltage - V 048 1 2 VDD = 6.0 V 15.0 V 24.0 V ID = 13.0 A Q G - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD I F - Diode Forward Current - A 0.01 0.1 100 0.4 0.6 0.8 1 1.2 VGS = 0 V Pulsed VF(S-D) - Source to Drain Voltage - V I AS - Single Avalanche Current - A 0.1 100 0.01 0.1 1 10 IAS = 13.0 A EAS = 16.9 mJ VDD = 15.0 V RG = 25 Ω VGS = 20.0 → 0 V Starting Tch = 25°C L - Inductive Load - mH

Data Sheet G16681EJ1V0DS 6 µ PA2502 EXAMPLE OF THE LAND PATTERN Please optimize the land pattern in consideration of dens ity, appearance of solder fillet s, common difference, etc in an actual design. l1 l2 e1: 0.65 b2: 0.35 b3: 2.7 l1: 1.3 l2: 3.7 l3: 7.1 (Unit: mm)

µ PA2502 The information in this document is current as of September, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer- designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) M8E 02. 11-1 (1) (2) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "Standard": "Special": "Specific":