UPA2452

UPA2452 RENESAS | Alldatasheet

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. MOS FIELD EFFECT TRANSISTOR µ PA2452 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. G16272EJ1V0DS00 (1st edition) Date Published October 2003 NS CP(K) Printed in Japan 2003

DESCRIPTION

The µ PA2452 is a switching device which can be driven directly by a 2.5 V power source. This µ PA2452 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power sw itch of portable machine and so on.

FEATURES

• 2.5 V drive available
• Low on-state resistance R DS(on)1 = 17.5 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A) R DS(on)2 = 18.5 mΩ TYP. (VGS = 4.0 V, ID = 4.0 A) R DS(on)3 = 21.0 mΩ TYP. (VGS = 3.1 V, ID = 4.0 A) R DS(on)4 = 25.0 mΩ TYP. (VGS = 2.5 V, ID = 4.0 A)
• Built-in G-S protection diode against ESD

ORDERING INFORMATION

µ PA2452TL 6PIN HWSON (4521) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 24.0 V Gate to Source Voltage (VDS = 0 V) V GSS ±12.0 V Drain Current (DC) Note1 ID(DC) ±7.8 A Drain Current (pulse) Note2 ID(pulse) ±80.0 A Total Power Dissipation (2 units) Note1 PT1 2.5 W Total Power Dissipation (2 units) Note3 PT2 0.7 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C Notes 1. Mounted on ceramic substrate of 50 cm2 x 1.1 mm 2. PW ≤ 10 µs, Duty Cycle ≤ 1% 3. Mounted on FR-4 board of 50 cm2 x 1.6 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 4.4±0.1 5.0±0.1 0.5±0.10.5±0.1 0.25+0.1 -0.05 0.145±0.05 0.8 MAX. 0.05+0 -0.05 (0.9) (0.15) (1.45) (3.05) (0.50) 1.85±0.1 2.0±0.1 1,2: Each lead has same dimensions Source 1 Gate 1 Drain 5,6: Source 2 Gate 2 EQUIVALENT CIRCUIT Source2 Body Diode Gate Protection Diode Gate2 Drain2 Source1 Body Diode Gate Protection Diode Gate1 Drain1

Data Sheet G16272EJ1V0DS 2 µ PA2452 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS V DS = 24.0 V, VGS = 0 V 10.0 µA Gate Leakage Current I GSS VGS = ±12.0 V, VDS = 0 V ±10.0 µA Forward Transfer Admittance Note | yfs | V DS = 10.0 V, ID = 4.0 A 3 S Input Capacitance C iss V DS = 10.0 V 390 pF Output Capacitance C oss V GS = 0 V 130 pF Reverse Transfer Capacitance C rss f = 1.0 MHz 90 pF Turn-on Delay Time t d(on) V DD = 20.0 V 20 ns Rise Time t r I D = 4.0 A 120 ns Turn-off Delay Time t d(off) V GS = 4.0 V 180 ns Fall Time t f RG = 6.0 Ω 210 ns Total Gate Charge Q G V DD = 20.0 V 6.5 nC Gate to Source Charge Q GS V GS = 4.0 V 1.0 nC Gate to Drain Charge Q GD I D = 7.8 A 3.0 nC Body Diode Forward Voltage Note VF(S-D) I F = 7.8 A, VGS = 0 V 0.8 V Reverse Recovery Time t rr I F = 7.8 A, VGS = 0 V 210 ns Reverse Recovery Charge Q rr di/dt = 100 A/µs 330 nC Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 2 GATE CHARGETEST CIRCUIT 1 SWITCHING TIME PG. RG VGS D.U.T. RL VDD τ = 1 sµ Duty Cycle ≤ 1% τ PG. 50 Ω D.U.T. RL VDD IG = 2 mA VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%

Data Sheet G16272EJ1V0DS 3 µ PA2452 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE dT - Percentage of Rated Power - % 100 120 0 25 50 75 100 125 150 175 TA - Ambient Temperature - °C P T - Total Power Dissipation - W 0.5 1.5 2.5 0 25 50 75 100 125 150 175 Mounted on ceramic board of 50 cm2 x 1.1 mm, 2 units Mounted on FR-4 board of 50 cm2 x 1.6 mm, 2 units TA - Ambient Temperature - °C FORWARD BIAS SAFE OPERATING AREA I D - Drain Current - A 0.01 0.1 100 1000 0.1 1 10 100 100 ms 10 ms ID(pulse) ID(DC) PW = 10 µs RDS(on) Limited (at VGS = 4.5 V) Single pulse Mounted on ceramic board o f 50 cm2 x 1.1 mm DC (2 units) 1 ms 100 µs VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH r th(ch-A) - Transient Thermal Resistance - °C/W 0.1 100 1000 Mounted on ceramic board of 50 cm2 x 1.1 mm Single pulse PD (FET1) : PD (FET2) = 1:1 Mounted on FR-4 board of 50 cm2 x 1.6 mm PW - Pulse Width - s 1 m 10 m 100 m 1 10 100 1000

Data Sheet G16272EJ1V0DS 4 µ PA2452 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS I D - Drain Current - A 0 0.4 0.8 1.2 1.6 Pulsed 2.5 V VGS = 4.5 V 4.0 V 3.1 V VDS - Drain to Source Voltage - V I D - Drain Current - A 0.0001 0.001 0.01 0.1 100 0 0.5 1 1.5 2 2.5 VDS =10.0 V Pulsed TA = 125°C 75°C 25°C −25°C V GS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT V GS(off) - Gate Cut-off Voltage - V 0.2 0.4 0.6 0.8 -50 0 50 100 150 VDS = 10.0 V ID = 1.0 mA Tch - Channel Temperature - °C | y fs | - Forward Transfer Admittance - S 0.01 0.1 0.01 0.1 1 10 VDS = 10.0 V Pulsed TA = −25°C 25°C 75°C 125°C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ 0.01 0.1 1 10 100 Pulsed VGS = 2.5 V 3.1 V 4.0 V 4.5 V ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 02468 1 0 1 2 ID = 4.0 A Pulsed VGS - Gate to Source Voltage - V

Data Sheet G16272EJ1V0DS 5 µ PA2452 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ -50 0 50 100 150 ID = 4.0 A Pulsed VGS = 2.5 V 3.1 V 4.0 V 4.5 V Tch - Channel Temperature - °C C iss, Coss, Crss - Capacitance - pF 100 1000 0.1 1 10 100 VGS = 0 V f = 1.0 MHz Ciss Coss Crss VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT CHARACTERISTICS t d(on), tr, td(off), tf - Switching Time - ns 100 1000 0.1 1 10 100 VDD = 20.0 V VGS = 4.0 V RG = 6.0 Ω td(off) td(on) tf tr ID - Drain Current - A V GS - Gate to Source Voltage - V 02468 ID = 7.8 A VDD = 5.0 V 12.0 V 20.0 V Q G - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE I F - Diode Forward Current - A 0.01 0.1 100 VGS = 0 V Pulsed VF(S-D) - Source to Drain Voltage - V

the device and characteristic degradation.

1. When you mount the device on a substrate, carry out within our recommended soldering conditions of infrared

reflow. If mounted exceeding the conditions, the characteristic of a device may be degraded and it may result failure.

1. When you wash the device mounted the substrate, carry out within our recommended conditions. If washed

exceeding the conditions, the characteristic of a device may be degraded and it may result in failure.

1. When you use ultrasonic wave to substrate after the device mounting, prevent from touching a resonance generator

directly. If it touches, the characteristic of a device may be degraded and it may result in failure.

1. Please refer to Figure 1 as an example of the land pattern. Optimize the land pattern in consideration of density,

appearance of solder fillets, common difference, etc in an actual design. Figure 1. Example of the land pattern

µ PA2452 The information in this document is current as of October, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer- designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) M8E 02. 11-1 (1) (2) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. "Standard": "Special": "Specific":