UPA2451TL

UPA2451 NEC | Alldatasheet

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© 2001 MOS FIELD EFFECT TRANSISTOR µµµµ PA2451 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DATA SHEET Document No. G15621EJ1V0DS00 (1st edition) Date Published March 2002 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

DESCRIPTION

The µPA2451 is a switching device which can be driven directly by a 2.5 V power source. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

FEATURES

• 2.5 V drive available
• Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) RDS(on)2 = 21 mΩ MAX. (VGS = 4.0 V, ID = 4.0 A) RDS(on)3 = 25 mΩ MAX. (VGS = 3.1 V, ID = 4.0 A) RDS(on)4 = 32 mΩ MAX. (VGS = 2.5 V, ID = 4.0 A)
• Built-in G-S protection diode against ESD

ORDERING INFORMATION

µPA2451TL 6PIN HWSON (4521) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) V DSS 30 V Gate to Source Voltage (VDS = 0 V) V GSS ±12 V Drain Current (DC) (TA = 25°C) I D(DC) ±8.2 A Drain Current (pulse) Note1 ID(pulse) ±80 A Total Power Dissipation (2unit) Note2 PT1 2.5 W Total Power Dissipation (2unit) Note3 PT2 0.7 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. T A = 25°C Mounted on ceramic board 3. TA = 25°C Mounted on FR4 board Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit : mm) 4.4±0.1 5.0±0.1 0.5±0.10.25+0.1 −0.05 0.145±0.05 0.8 MAX. 0.05+0 −0.05 (0.9) (0.15) (1.45) (3.05) (0.50) 1.85±0.1 1,2: Source 1 Gate 1 Drain 5,6: Source 2 Gate 2 EQUIVALENT CIRCUIT Source2 Body Diode Gate Protection Diode Gate2 Drain2 Source1 Body Diode Gate Protection Diode Gate1 Drain1

µµµµ PA2451 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS VDS = 30 V, VGS = 0 V1 0 µA Gate Leakage Current I GSS VGS = ±12 V, VDS = 0 V± 1 0 µA Gate Cut-off Voltage V GS(off) VDS = 10 V, ID = 1.0 mA 0.5 1.0 1.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 4.0 A5 . 0 S Drain to Source On-state Resistance R DS(on)1 VGS = 4.5 V, ID = 4.0 A 1 21 62 0 m Ω RDS(on)2 VGS = 4.0 V, ID = 4.0 A 12.5 16.5 21 m Ω RDS(on)3 VGS = 3.1 V, ID = 4.0 A 14 18.5 25 m Ω RDS(on)4 VGS = 2.5 V, ID = 4.0 A 15.5 22.5 32 m Ω Input Capacitance C iss VDS = 10 V 540 pF Output Capacitance C oss VGS = 0 V 150 pF Reverse Transfer Capacitance C rss f = 1.0 MHz 80 pF Turn-on Delay Time t d(on) VDD = 15 V, ID = 4.0 A1 7 n s Rise Time t r VGS = 10 V4 5 n s Turn-off Delay Time t d(off) RG = 6.0 Ω 360 ns Fall Time t f 160 ns Total Gate Charge Q G VDD = 24 V9 . 0 n C Gate to Source Charge Q GS VGS = 4.0 V 1.5 nC Gate to Drain Charge Q GD ID = 8.2 A4 . 5 n C Body Diode Forward Voltage V F(S-D) IF = 8.2 A, VGS = 0 V0 . 8 4 V Reverse Recovery Time t rr IF = 8.2 A, VGS = 0 V 160 ns Reverse Recovery Charge Q rr di/dt = 100 A / µs 200 nC TEST CIRCUIT 2 GATE CHARGETEST CIRCUIT 1 SWITCHING TIME PG. R G VGS D.U.T. R L VDD τ = 1 sµ Duty Cycle ≤ 1% τ PG. 50 Ω D.U.T. R L VDD IG = 2 mA VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%

Data Sheet G15621EJ1V0DS 3 µµµµ PA2451 TYPICAL CHARACTERISTICS (TA = 25°C) 30 15060 90 100 120 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA dT - Derating Factor - % TA - Ambient Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V 100 0.1 0.1 0.01 1000 RDS(on) Limited (@V GS = 4.5 V) ID (pulse) ID (DC ) PW = 10 s PW = 100 s PW = 1 ms PW = 10 ms PW = 100 ms DC (2 units) DC (1 unit) Single Pulse PD (FET1):PD (FET2) =1:1 µ µ DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A Pulsed VGS = 4.5 V 2.5 V 100 0.1 VGS - Gate to Sorce Voltage - V 0.01 0.001 25˚C −25˚C 75˚C TA = 125˚C 0.0001 VDS = 10 V Pulsed FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate to Source Cut-off Voltage - V VDS = 10 V ID = 1 mA −50 50 1000 150 1.5 1.0 0.5 1 10 1000.1 VDS = 10 V Pulsed ID - Drain Current - A | yfs | - Forward Transfer Admittance - S 0.1 0.01 0.01 100 −25˚C 25˚C TA = 75˚C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT

µµµµ PA2451 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10.1 10 100 ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - mΩ TA = 125˚C 25˚C Pulsed VGS = 2.5 V 75˚C −25˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10.1 10 100 ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - mΩ TA = 125˚C Pulsed VGS = 3.1 V −25˚C 75˚C 25˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10.1 10 100 ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - mΩ TA = 125˚C

30 Pulsed

VGS = 4.0 V −25˚C 75˚C 25˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10.1 10 100 ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - mΩ TA = 125˚C VGS = 4.5 V −25˚C 75˚C 25˚C DRAIN TO SOURCE ON - STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature -˚C −50 0 50 100 150 R DS (on) - Drain to Source On-state Resistance - mΩ VGS = 2.5 VID = 4.0 A Pulsed 4.0 V 3.1 V 4.5 V 10 0 2 4 6 81 0 R DS (on) - Drain to Source On-state Resistance - mΩ VGS - Gate to Source Voltage - V ID = 4.0 A Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

Data Sheet G15621EJ1V0DS 5 µµµµ PA2451 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF 0.1 100 1000 10000 1 10 100 f = 1 MHz VGS = 0 V 0.01 C iss C oss C rss 0.1 1.0 10 ID - Drain Current - A td (on), tr, td(off), tf - Switchig Time - ns 100 1000 td(off) td(on) tf tr SWITCHING CHARACTERISTICS VDD = 15 V VGS = 10 V R G = 0 Ω 0.01 0.1 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Pulsed VGS = 0 V Q G - Gate Charge - nC DYNAMIC INPUT/OUTPUT CHARACTERISTICS VGS - Gate to Drain Voltage - V ID = 8.2 A 10864 20 6 V VDD = 24 V 15 V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(ch-A) - Transient Thermal Resistance - ˚C/W 0.1 100 1000 10.001 0.01 0.1 10 100 1000 S Mounted on FR4 board on 50 cm x 1.0 mmt ˚C/W178.6 Mounted on Ceramic board on 50 cm x 1.1 mmt ˚C/W50 Single Pulse PD (FET1):PD (FET2) =1:1

µµµµ PA2451 [MEMO]

Data Sheet G15621EJ1V0DS 7 µµµµ PA2451 [MEMO]

µµµµ PA2451 M8E 00. 4 The information in this document is current as of March, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).