UPA1707

UPA1707 RENESAS | Alldatasheet

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The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. © 1998 MOS FIELD EFFECT TRANSISTOR µµµµ PA1707 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. G13084EJ3V0DS00 (3rd edition) Date Published April 2001 NS CP(K) Printed in Japan

DESCRIPTION

The µPA1707 is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

FEATURES

• Low on-resistance R DS(on)1 = 10.0 mΩ TYP. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 12.5 mΩ TYP. (VGS = 4.5 V, ID = 5.0 A) RDS(on)3 = 14.0 mΩ TYP. (VGS = 4.0 V, ID = 5.0 A)
• Low Ciss: Ciss = 1400 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)

ORDERING INFORMATION

µPA1707G Power SOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) V DSS 30 V Gate to Source Voltage (VDS = 0 V) V GSS ±20 V Drain Current (DC) (TC= 25°C) I D(DC) ±10 A Drain Current (pulse) Note1 ID(pulse) ±40 A Total Power Dissipation (TA = 25°C) Note2 PT 2.0 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Mounted on ceramic substrate of 1200 mm2 x 1.7 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. PACKAGE DRAWING (Unit: mm) 1.27 0.12 M 6.0 ±0.3 4.4 0.40 +0.10 –0.05 0.78 MAX. 0.05 MIN. 1.8 MAX. 1.44 0.8 0.5 ±0.2 0.15 +0.10 –0.05 5.37 MAX. 0.10 1,2,3 5,6,7,8 ; Source ; Gate ; Drain EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain The mark # shows major revised points.

µµµµ PA1707 ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current I GSS VGS = ±20 V, VDS = 0 V ±10 µA Gate Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 5.0 A 5.0 13 S Drain to Source On-state Resistance R DS(on)1 VGS = 10 V, ID = 5.0 A 10.0 13.5 m Ω RDS(on)2 VGS = 4.5 V, ID = 5.0 A 12.5 18 m Ω RDS(on)3 VGS = 4.0 V, ID = 5.0 A 14.0 21 m Ω Input Capacitance C iss VDS = 10 V 1400 pF Output Capacitance C oss VGS = 0 V 450 pF Reverse Transfer Capacitance C rss f = 1 MHz 180 pF Turn-on Delay Time t d(on) ID = 5.0 A 20 ns Rise Time t r VGS(on) = 10 V 185 ns Turn-off Delay Time t d(off) VDD = 15 V 65 ns Fall Time t f RG = 10 Ω 40 ns Total Gate Charge Q G ID = 10 A 26 nC Gate to Source Charge Q GS VDD = 24 V 4.2 nC Gate to Drain Charge Q GD VGS = 10 V 6.5 nC Body Diode Forward Voltage V F(S-D) IF = 10 A, VGS = 0 V 0.8 V Reverse Recovery Time t rr IF = 10 A, VGS = 0 V 30 ns Reverse Recovery Charge Q rr di/dt = 100 A/ µs2 5 n C TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE PG. RG VGS D.U.T. RL VDD τ = 1 sµ Duty Cycle ≤ 1% VGS Wave Form ID Wave Form VGS 10% 90%VGS(on) 10%0 ID 90% 90% td(on) tr td(off) t f 10% τ ID ton toff PG. 50 Ω D.U.T. RL VDD IG = 2 mA

Data Sheet G13084EJ3V0DS 3 µµµµ PA1707 TYPICAL CHARACTERISTICS (TA = 25°C) Remark Mounted on ceramicsubstrate of 1200 mm2 × 1.7 mm TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C/W 0.001 0.01 0.1 100 1000 10 m 100 m 1 10 100 1000 10000 100 µ 1m Mounted on ceramic substrate of 1200 mm2 to 1.7 mm Single Pulse Channel to Ambient Rth(ch-a) = 62.5˚C/W DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - ˚C dT - Percentage of Rated Power - % 0 20 40 60 80 100 120 140 160 100 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TA - Ambient Temperature - ˚C PT - Total Power Dissipation - W 0 20 40 60 80 100 120 140 160 2.8 2.4 2.0 1.6 1.2 0.8 0.4 Mounted on ceramic substrate of 1200mm ×1.7mm FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A 0.1 0.01 100 1 10 100 TC = 25˚C Single Pulse ID(pulse) RDS(on) Limited (at V GS = 10 V ) ID(DC) 10 ms 0.1 DCPower Dissipation Limited 100 ms 1 ms

µµµµ PA1707 FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 0.1 0.01

100 Pulsed

VDS = 10 V TA = 125˚C 75˚C 25˚C −25˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 0 0.4 0.6 0.8 0.2 Pulsed 40 VGS = 10 V 4.5 V 4 V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID- Drain Current - A |yfs| - Forward Transfer Admittance - S VDS =10 V Pulsed 100 10 1000.1 TA = −25˚C 25˚C 75˚C 125˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE V GS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 51 0 1 5 2 0 2 5 Pulsed ID = 5 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ 10.1 10 100 Pulsed VGS = 4 V 4.5 V 10 V GATE CUT-OFF VOLTAGE vs.CHANNEL TEMPERATURE T ch - Channel Temperature - ˚C VGS(off) - Gate Cut-off Voltage - V VDS = 10 V ID = 1 mA −40 04 0 80 120 1.0 1.4 1.8 2.2 0.6

Data Sheet G13084EJ3V0DS 5 µµµµ PA1707 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C RDS(on) - Drain to Source On-state Resistance - mΩ −40 0 40 80 120 140 ID = 5 A VGS = 4.0 V 4.5 V 10 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V IF - Diode Forward Current - A0.1 100 Pulsed VGS = 4 V 0 V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE V DS - Drain to Source Voltage - V Ciss, Coss, Crss - Capacitance - pF 0.1 100 1000 10000 1 10 30 100 VGS = 0 V f = 1 MHz Ciss Coss Crss SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 0.1 100 1000 1 10 100 VDS = 15 V VGS = 10 V RG = 10 Ω tr td(off) td(on) tf REVERSE RECOVERY TIME vs. DRAIN CURRENT I D - Drain Current - A trr - Reverse Recovery Time - ns 0.1 1 10 100 1000 100 di/dt = 100A / VGS = 0 V sµ VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS QG - Gate Charge - nC VDS - Drain to Source Voltage - V 320 4 8 12 16 20 24 28 ID = 10 A VGS VDD = 24 V 15 V 6 V

µµµµ PA1707 [MEMO]

Data Sheet G13084EJ3V0DS 7 µµµµ PA1707 [MEMO]

µµµµ PA1707 M8E 00. 4 The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a pa rticular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).