UPA1706TP

UPA1706TP RENESAS | Alldatasheet

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© 2001 MOS FIELD EFFECT TRANSISTOR µµµµ PA1706TP SWITCHING N-CHANNEL POWER MOS FET DATA SHEET Document No. G15850EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. PACKAGE DRAWING (Unit: mm) 1.27 TYP. 0.12 M 6.0 ±0.3 1.49 ±0.21 2.0 ±0.2 4.4 ±0.150.8 ±0.2 0.40+0.10 –0.05 5.2+0.17 –0.2 0.05 ±0.05 1.44 TYP. 1.1 ±0.2 0.15+0.10 –0.05 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8, 9 ; Drain 4.1 MAX. 2.9 MAX. S0.10 S EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain

DESCRIPTION

The µPA1706TP which has a heat spreader is N-Channel MOS Field Effect Transistor designed for DC/DC converter and power management application of notebook computer.

FEATURES

• Low on-state resistance R DS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 7.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)
• Low Ciss: Ciss = 3000 pF TYP. (VDS = 10 V, VGS = 0 V)
• Small and surface mount package (Power HSOP8)

ORDERING INFORMATION

µPA1706TP Power HSOP8 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) V DSS 30 V Gate to Source Voltage (VDS = 0 V) V GSS ±20 V Drain Current (DC) (TC = 25°C) I D(DC)1 ±28 A Drain Current (DC) Note1 ID(DC)2 ±17 A Drain Current (pulse) Note2 ID(pulse) ±100 A Total Power Dissipation (TC = 25°C) P T1 39 W Total Power Dissipation Note1 PT2 3W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to + 150 °C Single Avalanche Current Note3 IAS 19 A Single Avalanche Energy Note3 EAS 36.1 mJ Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec 2. PW ≤ 10 µs, Duty cycle ≤ 1% 3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, L = 100 µH, VGS = 20 → 0 V Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

µµµµPA1706TP ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current I DSS VDS = 30 V, VGS = 0 V 10 µA Gate Leakage Current I GSS VGS = ±20 V, VDS = 0 V ±10 µA Gate Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 7.0 A 10 22 S Drain to Source On-state Resistance R DS(on)1 VGS = 10 V, ID = 7.0 A 5.8 7.8 m Ω RDS(on)2 VGS = 4.5 V, ID = 7.0 A 7.0 10.0 m Ω RDS(on)3 VGS = 4.0 V, ID = 7.0 A 8.0 12.0 m Ω Input Capacitance C iss VDS = 10 V 3000 pF Output Capacitance C oss VGS = 0 V 950 pF Reverse Transfer Capacitance C rss f = 1 MHz 380 pF Turn-on Delay Time t d(on) VDD = 15 V, ID = 13 A 20 ns Rise Time t r VGS = 10 V 20 ns Turn-off Delay Time t d(off) RG = 10 Ω 80 ns Fall Time t f 30 ns Total Gate Charge Q G VDD = 24 V 56 nC Gate to Source Charge Q GS VGS = 10 V 9 nC Gate to Drain Charge Q GD ID = 13 A 14 nC Body Diode Forward Voltage V F(S-D) IF = 13 A, VGS = 0 V 0.8 V Reverse Recovery Time t rr IF = 13 A, VGS = 0 V 43 ns Reverse Recovery Charge Q rr di/dt = 100 A/µs5 0 n C TEST CIRCUIT 3 GATE CHARGE VGS = 20 → 0 V PG. R G = 25 Ω 50 Ω D.U.T. L VDD TEST CIRCUIT 1 AVALANCHE CAPABILITY PG. D.U.T. R L VDD TEST CIRCUIT 2 SWITCHING TIME R G PG. IG = 2 mA 50 Ω D.U.T. R L VDD ID VDD IAS VDS BV DSS Starting Tch VGS τ = 1 µs Duty Cycle ≤ 1% τ VGS Wave Form VDS Wave Form VGS VDS 10%0 90% 90% 90% VGS VDS ton toff td(on) tr td(off) tf 10% 10%

Data Sheet G15850EJ1V0DS 3 µµµµPA1706TP TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TC - Case Temperature - ˚C dT - Percentage of Rated Power - % 0 20 40 60 80 100 120 140 160 100 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TC - Case Temperature - ˚C PT - Total Power Dissipation - W 0 20 40 60 80 100 120 140 160 FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A 0.1 0.10.01 100 1000 1 10 100 TC = 25˚C Single Pulse RDS(on) Limited (at V GS = 10 V) ID(DC) ID(pulse) PW = 1 ms 10 ms Power Dissipation Limited TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C/W 0.01 0.1 100 1 m 10 m 100 m 1 10 100 1000 100 µ R th(ch-C) = 3.21˚C /W Single Pulse

µµµµPA1706TP FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 0.1 0.01

100 Pulsed

TA = 125˚C 25˚C VDS = 10 V −25˚C 75˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 0 0.4 0.6 0.8 0.2 Pulsed 4.5 V 4.0 V VGS = 10 V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A |yfs| - Forward Transfer Admittance - S VDS =10 V Pulsed 1000 100 10 1000.1 25˚C 75˚C 125˚C TA = −25˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE V GS - Gate to Source Voltage - V R DS(on) - Drain to Source On-state Resistance - mΩ Pulsed50 24 68 10 12 14 16 18 20 ID = 7.0 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - mΩ 10.1 10 100 1000 Pulsed 10 V 4.5 V VGS = 4.0 V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate to Source Cut-off Voltage - V VDS = 10 V ID = 1 mA −40 −20 804020 600 100 120 140 160 1.2 1.4 1.0 1.6 1.8 2.0 2.2 2.4 2.6

Data Sheet G15850EJ1V0DS 5 µµµµPA1706TP SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 0.1 100 1000 1 10 100 VDD = 15 V VGS = 10 V R G = 10 Ω td(on) tf tr td(off) REVERSE RECOVERY TIME vs. DRAIN CURRENT ID - Drain Current - A trr - Reverse Recovery Diode - ns 0.1 1 10 100 1000 100 di/dt = 100 A/ V GS = 0 V sµ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE T ch - Channel Temperature - ˚C R DS(on) - Drain to Source On-state Resistance - mΩ 0-40 -20 0 20 40 60 80 100 120 140 160 ID = 7.0 A 4.5 V 10 V VGS = 4.0 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE V SD - Source to Drain Voltage - V IF - Diode Forward Current - A 0.1 1000 100 Pulsed VGS =10 V 0 V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE V DS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF 0.1 100 1000 10000 1 10 100 VGS = 0 V f = 1 MHz C iss C oss C rss VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 0 20 40 60 80 100 ID = 13 A VGS VDS VDD = 24 V 15 V 6 V

µµµµPA1706TP [MEMO]

Data Sheet G15850EJ1V0DS 7 µµµµPA1706TP [MEMO]

µµµµPA1706TP M8E 00. 4 The information in this document is current as of May, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).