UPA1706 NEC | Alldatasheet

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The information in this document is subject to change without notice. © 1998 MOS FIELD EFFECT TRANSISTOR µ µ µ µ PA1706 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. G13083EJ1V0DS00 (1st edition) Date Published January 1999 NS CP(K) Printed in Japan DESCRIPTION PACKAGE DRAWING (Unit : mm) This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

FEATURES

  • Super Low on-resistance R DS(on)1 = 5.8 mΩ (TYP.) (VGS = 10 V, ID = 7.0 A) R DS(on)2 = 7.0 mΩ (TYP.) (VGS = 4.5 V, ID = 7.0 A) R DS(on)3 = 8.0 mΩ (TYP.) (VGS = 4.0 V, ID = 7.0 A)
  • Low Ciss : Ciss = 3000 pF (TYP.)
  • Built-in G-S protection diode
  • Small and surface mount package (Power SOP8)

ORDERING INFORMATION

µPA1706G Power SOP8 EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS (T A = 25°C, All terminals are connected) Drain to Source Voltage Note1 VDSS 30 V Gate to Source Voltage Note2 VGSS ±20 V Drain Current (DC) I D(DC) ±13 A Drain Current (pulse) Note3 ID(pulse) ±52 A Total Power Dissipation (TA = 25°C) Note4 PT 2.0 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to + 150 °C Notes 1.VGS = 0 V 2. VDS = 0 V 3. PW ≤ 10 µs, Duty Cycle ≤ 1 % 4. Mounted on ceramic substrate of 1200 mm2 x 0.7mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Source Body Diode Gate Protection Diode Gate Drain 1.27 0.12 M 6.0 ±0.3 4.4 0.40+0.10 –0.05 0.78 MAX. 0.05 MIN. 1.8 MAX. 1.44 0.8 0.5 ±0.2 0.15+0.10 –0.05 5.37 MAX. 0.10 1,2,3 5,6,7,8 ; Source ; Gate ; Drain

Data Sheet G13083EJ1V0DS002 µ µ µ µ PA1706 ELECTRICAL CHARACTERISTICS (T A = 25°C, All terminals are connected) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance R DS(on)1 VGS = 10 V, ID = 7.0 A 5.8 7.8 m Ω R DS(on)2 VGS = 4.5 V, ID = 7.0 A 7.0 10.0 m Ω R DS(on)3 VGS = 4.0 V, ID = 7.0 A 8.0 12.0 m Ω Gate to Source Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 7.0 A 10 22 S Drain Leakage Current I DSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current I GSS VGS = ±20 V, VDS = 0 V ±10 µA Input Capacitance C iss VDS = 10 V 3000 pF Output Capacitance C oss VGS = 0 V 950 pF Reverse Transfer Capacitance C rss f = 1 MHz 380 pF Turn-on Delay Time t d(on) ID = 7.0 A 40 ns Rise Time t r VGS(on) = 10 V 220 ns Turn-off Delay Time t d(off) VDD = 15 V 140 ns Fall Time t f R G = 10 Ω 90 ns Total Gate Charge Q G ID = 13 A 56 nC Gate to Source Charge Q GS VDD = 24 V 9 nC Gate to Drain Charge Q GD VGS = 10 V 14 nC Body Diode Forward Voltage V F(S-D) IF = 13 A, VGS = 0 V 0.8 V Reverse Recovery Time t rr 43 ns Reverse Recovery Charge Q rr IF = 13 A, VGS = 0 V di/dt = 100 A/ µs 50 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE PG. R G VGS D.U.T. R L VDD τ = 1 sµ Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form VGS 10 % 90 %VGS(on) 10 %0 ID 90 % 90 % td(on) tr td(off) tf 10 % τ R G = 10 Ω ID ton toff PG. 50 Ω D.U.T. R L VDD IG = 2 mA

Data Sheet G13083EJ1V0DS00 3 µ µ µ µ PA1706 TYPICAL CHARACTERISTICS (T A = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - ˚C dT - Percentage of Rated Power - % 0 20 40 60 80 100 120 140 160 100 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TA - Ambient Temperature - ˚C PT - Total Power Dissipation - W 0 20 40 60 80 100 120 140 160 2.8 2.4 2.0 1.6 1.2 0.8 0.4 Mounted on ceramic substrate of 1200mm × 0.7mm FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A 0.1 0.1 100 1 10 100 TA = 25 ˚C Single Pulse RDS(on) Limited (@V GS =10 V) ID (DC) = 13 A ID(pulse) = 52 A 10 ms DS 1 ms 100 ms Power Dissipation Limited Remark Mounted on ceramic substrate of 1200mm2× 0.7mm TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C/W 0.001 0.01 0.1 100 1 000 1 m 10 m 100 m 1 10 100 1 000 10 000 Mounted on ceramic substrate of 1200mm × 0.7mm Single Pulse Channel to Ambient 100 µ R th(ch-a) = 62.5˚C/W

Data Sheet G13083EJ1V0DS004 µ µ µ µ PA1706 FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 0.1 0.01

100 Pulsed

TA = 125˚C 25˚C VDS = 10 V -25˚C 75˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A 0 0.4 0.6 0.8 0.2 Pulsed 4.5 V 4.0 V VGS = 10 V FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A |yfs| - Forward Transfer Admittance - S VDS =10 V Pulsed 1000 100 10 1000.1 25˚C 75˚C 125˚C TA = −25˚C DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V R DS(on) - Drain to Source On-state Resistance - mΩ Pulsed50 24 68 10 12 14 16 18 20 ID = 7.0 A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A R DS(on) - Drain to Source On-state Resistance - mΩ 10 100 Pulsed 10 V 4.5 V VGS = 4.0 V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate to Source Cut-off Voltage - V VDS = 10 V ID = 1 mA -40 -20 804020 600 100 120 140 160 1.2 1.4 1.0 1.6 1.8 2.0 2.2 2.4 2.6

Data Sheet G13083EJ1V0DS00 5 µ µ µ µ PA1706 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C R DS(on) - Drain to Source On-state Resistance - mΩ 0-40 -20 0 20 40 60 80 100 120 140 160 ID = 7.0 A 4.5 V 10 V VGS = 4.0 V SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V IF - Diode Forward Current - A 0.1 1000 100 Pulsed VGS =10 V 0 V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF 0.1 100 1000 10000 1 10 100 VGS = 0 V f = 1 MHz C iss C oss C rss SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 0.1 100 1 000 1 10 100 VDD = 15 V VGS = 10 V R G = 10 Ω td(on) tf tr td(off) REVERSE RECOVERY TIME vs. DRAIN CURRENT ID - Drain Current - A trr - Reverse Recovery Diode - ns 0.1 1 10 100 1 000 100 di/dt = 100A/ VGS = 0 V sµ VGS - Gate to Source Voltage - V DYNAMIC INPUT/OUTPUT CHARACTERISTICS Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 0 20 40 60 80 100 ID = 13 A VGS VDS VDD = 24 V 15 V 6 V

Data Sheet G13083EJ1V0DS006 µ µ µ µ PA1706 [MEMO]

Data Sheet G13083EJ1V0DS00 7 µ µ µ µ PA1706 [MEMO]

µ µ µ µ PA1706 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5