UPA1705 RENESAS | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 10
Technical content
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Renesas Electronics website: http://www.renesas.com April 1st, 2010 Renesas Electronics Corporation Issued by: Renesas Electronics Corporation (http://www.renesas.com) Send any inquiries to http://www.renesas.com/inquiry.
- All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to additional and different information to be disclosed by Renesas Electronics such as that disclosed through our website. 2. Renesas Electronics does not assume any liability for infringeme nt of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of Renesas Electronics products or technical information described in this document. No license, express, implied or otherwise, is granted hereby under any patents, copyrights or other intellectual property rights of Renesas Electronics or others. 3. You should not alter, modify, copy, or otherwise misappropriate any Renesas Electronics product, whether in whole or in part. 4. Descriptions of circuits, software and other related informat ion in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesas Electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. When exporting the products or technology described in this doc ument, you should comply with the applicable export control laws and regulations and follow the procedures required by such laws and regulations. You should not use Renesas Electronics products or the technology described in this document for any purpose relating to military applications or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. Renesas Electronics has used reasonable care in preparing th e information included in this document, but Renesas Electronics does not warrant that such information is error free. Renesas Electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. 7. Renesas Electronics products ar e classified according to the following three quality grades: “Standard”, “High Quality”, and “Specific”. The recommended applications for each Renesas Electronics product depends on the product’s quality grade, as indicated below. You must check the quality grade of each Renesas Electronics product before using it in a particular application. You may not use any Renesas Electronics product for any application categorized as “Specific” without the prior written consent of Renesas Electronics. Further, you may not use any Renesas Electronics product for any application for which it is not intended without the prior written consent of Renesas Electronics. Renesas Electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any Renesas Electronics product for an application categorized as “Specific” or for which the product is not intended where you have failed to obtain the prior written consent of Renesas Electronics. The quality grade of each Renesas Electronics product is “Standard” unless otherwise expressly specified in a Renesas Electronics data sheets or data books, etc. “Standard”: Computers; office equipmen t; communications equipment; test and measurement equipment; audio and visual equipment; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. “High Quality”: Transportation equi pment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti- crime systems; safety equipment; and medical equipment not specifically designed for life support. “Specific”: Aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct threat to human life. 8. You should use the Renesas Electronics pr oducts described in this document within the range specified by Renesas Electronics, especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas Electronics shall have no liability for malfunctions or damages arising out of the use of Renesas Electronics products beyond such specified ranges. 9. Although Renesas Electronics endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Further, Renesas Electronics products are not subject to radiation resistance design. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a Renesas Electronics product, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measures. Because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. Please contact a Renesa s Electronics sales office for details as to environmental matters such as the environmental compatibility of each Renesas Electronics product. Please use Renesas Electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. 12. Please contact a Renesa s Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority- owned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
© 1998, 1999 MOS FIELD EFFECT TRANSISTOR µµµµPA1705 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. G12712EJ1V0DS00 (1st edition) Date Published February 1999 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. PACKAGE DRAWING (Unit : mm) 1.27 0.12 M 6.0 ±0.3 4.4 0.40+0.10 –0.05 0.78 Max. 0.05 Min. 1.8 Max. 1.44 0.8 0.5 ±0.2 0.15+0.10 –0.05 5.37 Max. 0.10 1, 2, 3 5, 6, 7, 8 ; Source ; Gate ; Drain EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers.
FEATURES
- Super low on-state resistance R DS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) R DS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A)
- Low Ciss : Ciss = 750 pF TYP.
- Built-in G-S protection diode
- Small and surface mount package (Power SOP8)
ORDERING INFORMATION
µPA1705G Power SOP8 ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0) V DSS 30 V Gate to Source Voltage (VDS = 0) V GSS ±25 V Drain Current (DC) I D(DC) ±8 A Drain Current (Pulse) Note1 ID(pulse) ±50 A Total Power Dissipation (TA = 25 °C) Note2 PT 2.0 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to + 150 °C Notes 1.PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm2 x 1.7 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device.
Data Sheet G12712EJ1V0DS002 µµµµPA1705 ELECTRICAL CHARACTERISTICS (T A = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance R DS(on)1 VGS = 10 V, ID = 4.0 A 19 27 m Ω R DS(on)2 VGS = 4.5 V, ID = 4.0 A 30 40 m Ω Gate to Source Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 4.0 A 4.0 8.4 S Drain Leakage Current I DSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current I GSS VGS = ±25 V, VDS = 0 V ±10 µA Input Capacitance C iss VDS = 10 V 750 pF Output Capacitance C oss VGS = 0 V 350 pF Reverse Transfer Capacitance C rss f = 1 MHz 160 pF Turn-on Delay Time t d(on) ID = 4.0 A 19 ns Rise Time t r VGS(on) = 10 V 107 ns Turn-off Delay Time t d(off) VDD = 15 V 50 ns Fall Time t f R G = 10 Ω 32 ns Total Gate Charge Q G ID = 8.0 A 19 nC Gate to Source Charge Q GS VDD = 24 V 2.4 nC Gate to Drain Charge Q GD VGS = 10 V 6.3 nC Body Diode Forward Voltage V F(S-D) IF = 8.0 A, VGS = 0 V 0.8 V Reverse Recovery Time t rr If = 8.0 A, VGS = 0 V 33 ns Reverse Recovery Charge Q rr di/dt = 100A/µs2 2 n C TEST CIRCUIT 2 GATE CHARGETEST CIRCUIT 1 SWITCHING TIME D.U.T. R L VDD R G R G = 10 ΩPG. Duty Cycle ≤ 1 % VGS (on) 90 % 0 10 % 90 % ID 0 10 % ID VGS 90 % 10 % td (on) ton toff tr td (off) tf VGS Wave Form ID Wave Form D.U.T. 50 ΩPG. VDD IG = 2 mA R L VGS t µ st = 1
Data Sheet G12712EJ1V0DS00 3 µµµµPA1705 TYPICAL CHARACTERISTICS (T A = 25 °C, All terminals are connected.) FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - ˚C dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE T A - Ambient Temperature - ˚C PT - Total Power Dissipation - W 0 200 20 40 60 80 100 120 140 160 100 40 60 80 100 120 140 160 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.1 0.1 100 1 10 100 TA = 25 ˚C Single Pulse Mounted on ceramic substrate of 1200 mm 2 × 1.7 mm 1 ms Power Dissipation Limited 100 ms ID(DC) = 8 A 10 ms ID(pulse) = 50 A Remark Mounted on ceramic substrate of 2000 mm 2 × 1.7 mm RDS(on) Limited (at V GS = 10 V) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C/W 0.001 0.01 0.1 100 1 000 10 m 100 m 1 10 100 1000 10 000 100 µ 1m Mounted on ceramic substrate of 1200 mm to 1.7 mm Single Pulse Channel to Ambient DC
Data Sheet G12712EJ1V0DS004 µµµµPA1705 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A | yfs | - Forward Transfer Admittance - S DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE V GS - Gate to Source Voltage - V R DS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE T ch - Channel Temperature - ˚C VGS(off) - Gate to Source Cutoff Voltage - V ID - Drain Current - A R DS(on) - Drain to Source On-State Resistance - mΩ VDS = 10 V Pulsed 0.1 1 100 10 100 10 15 Pulsed 10 100 Pulsed VGS = 0 V IF = 8 A –20 0 40 100 140 160 1.0 2.0 150 100 VGS =10 V TA = 125 ˚C 75 ˚C 25 ˚C –25 ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 0.1 0.01 0 0.4 0.6 0.8 101
100 Pulsed
0.20 Pulsed VGS = 10 V VGS = 4.5 V TA = 125 ˚C 75 ˚C 25 ˚C –25 ˚C VDS = 10 V 20 60 80 120 ID = 4 A VGS = 4.5 V
Data Sheet G12712EJ1V0DS00 5 µµµµPA1705 SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V ISD - Diode Forward Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE V GS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 0.1 0.1 100 0.5 Pulsed 0.1 100 1 000 1 000 0 1 10 100 VDS = 10 V VGS = 0 V f = 1 MHz 100 1 000 1 10 100 VGS - Gate to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT I F - Diode Current - A trr - Reverse Recovery Time - ns di/dt = 100 A/ s VGS = 0 µ 0.1 1 10 100 1.0 1.5 VDD = 15 V VGS(on) = 10 V R G = 10 Ω DYNAMIC INPUT/OUTPUT CHARACTERISTICS Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 0 5 1 01 52 0 C oss C rss VDD = 24 V 15 V 6 V VGS VDS td(off) td(on) tr tf 1 000 100 ID = 8 A VGS = 0 V C iss DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C R DS(on) - Drain to Source On-State Resistance - mΩ –20 0 40 80 120 140 160 ID = 4 A VGS = 4.5 V VGS = 10 V 20 60 100
Data Sheet G12712EJ1V0DS006 µµµµPA1705 [MEMO]
Data Sheet G12712EJ1V0DS00 7 µµµµPA1705 [MEMO]
µµµµPA1705
- The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
- No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.
- NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.
- Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.
- While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.
- NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. M7 98. 8