UPA1705 NEC | Alldatasheet

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© 1998, 1999 MOS FIELD EFFECT TRANSISTOR µµµµPA1705 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET Document No. G12712EJ1V0DS00 (1st edition) Date Published February 1999 NS CP(K) Printed in Japan The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. PACKAGE DRAWING (Unit : mm) 1.27 0.12 M 6.0 ±0.3 4.4 0.40+0.10 –0.05 0.78 Max. 0.05 Min. 1.8 Max. 1.44 0.8 0.5 ±0.2 0.15+0.10 –0.05 5.37 Max. 0.10 1, 2, 3 5, 6, 7, 8 ; Source ; Gate ; Drain EQUIVALENT CIRCUIT Source Body Diode Gate Protection Diode Gate Drain

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for DC/DC Converters and power management application of notebook computers.

FEATURES

  • Super low on-state resistance R DS(on)1 = 19.0 mΩ TYP. (VGS = 10 V, ID = 4.0 A) R DS(on)2 = 30.0 mΩ TYP. (VGS = 4.5 V, ID = 4.0 A)
  • Low Ciss : Ciss = 750 pF TYP.
  • Built-in G-S protection diode
  • Small and surface mount package (Power SOP8)

ORDERING INFORMATION

µPA1705G Power SOP8 ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, All terminals are connected.) Drain to Source Voltage (VGS = 0) V DSS 30 V Gate to Source Voltage (VDS = 0) V GSS ±25 V Drain Current (DC) I D(DC) ±8 A Drain Current (Pulse) Note1 ID(pulse) ±50 A Total Power Dissipation (TA = 25 °C) Note2 PT 2.0 W Channel Temperature T ch 150 °C Storage Temperature T stg –55 to + 150 °C Notes 1.PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm2 x 1.7 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage Exceeding the rated voltage may be applied to this device.

Data Sheet G12712EJ1V0DS002 µµµµPA1705 ELECTRICAL CHARACTERISTICS (T A = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance R DS(on)1 VGS = 10 V, ID = 4.0 A 19 27 m Ω R DS(on)2 VGS = 4.5 V, ID = 4.0 A 30 40 m Ω Gate to Source Cut-off Voltage V GS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 4.0 A 4.0 8.4 S Drain Leakage Current I DSS VDS = 30 V, VGS = 0 V 10 µA Gate to Source Leakage Current I GSS VGS = ±25 V, VDS = 0 V ±10 µA Input Capacitance C iss VDS = 10 V 750 pF Output Capacitance C oss VGS = 0 V 350 pF Reverse Transfer Capacitance C rss f = 1 MHz 160 pF Turn-on Delay Time t d(on) ID = 4.0 A 19 ns Rise Time t r VGS(on) = 10 V 107 ns Turn-off Delay Time t d(off) VDD = 15 V 50 ns Fall Time t f R G = 10 Ω 32 ns Total Gate Charge Q G ID = 8.0 A 19 nC Gate to Source Charge Q GS VDD = 24 V 2.4 nC Gate to Drain Charge Q GD VGS = 10 V 6.3 nC Body Diode Forward Voltage V F(S-D) IF = 8.0 A, VGS = 0 V 0.8 V Reverse Recovery Time t rr If = 8.0 A, VGS = 0 V 33 ns Reverse Recovery Charge Q rr di/dt = 100A/µs2 2 n C TEST CIRCUIT 2 GATE CHARGETEST CIRCUIT 1 SWITCHING TIME D.U.T. R L VDD R G R G = 10 ΩPG. Duty Cycle ≤ 1 % VGS (on) 90 % 0 10 % 90 % ID 0 10 % ID VGS 90 % 10 % td (on) ton toff tr td (off) tf VGS Wave Form ID Wave Form D.U.T. 50 ΩPG. VDD IG = 2 mA R L VGS t µ st = 1

Data Sheet G12712EJ1V0DS00 3 µµµµPA1705 TYPICAL CHARACTERISTICS (T A = 25 °C, All terminals are connected.) FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - ˚C dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TA - Ambient Temperature - ˚C PT - Total Power Dissipation - W 0 200 20 40 60 80 100 120 140 160 100 40 60 80 100 120 140 160 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.1 0.1 100 1 10 100 TA = 25 ˚C Single Pulse Mounted on ceramic substrate of 1200 mm 2 × 1.7 mm 1 ms Power Dissipation Limited 100 ms ID(DC) = 8 A 10 ms ID(pulse) = 50 A Remark Mounted on ceramic substrate of 2000 mm2 × 1.7 mm RDS(on) Limited (at V GS = 10 V) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - ˚C/W 0.001 0.01 0.1 100 1 000 10 m 100 m 1 10 100 1000 10 000 100 µ 1m Mounted on ceramic substrate of 1200 mm to 1.7 mm Single Pulse Channel to Ambient DC

Data Sheet G12712EJ1V0DS004 µµµµPA1705 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A | yfs | - Forward Transfer Admittance - S DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V R DS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C VGS(off) - Gate to Source Cutoff Voltage - V ID - Drain Current - A R DS(on) - Drain to Source On-State Resistance - mΩ VDS = 10 V Pulsed 0.1 1 100 10 100 10 15 Pulsed 10 100 Pulsed VGS = 0 V IF = 8 A –20 0 40 100 140 160 1.0 2.0 150 100 VGS =10 V TA = 125 ˚C 75 ˚C 25 ˚C –25 ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 0.1 0.01 0 0.4 0.6 0.8 101

100 Pulsed

0.20 Pulsed VGS = 10 V VGS = 4.5 V TA = 125 ˚C 75 ˚C 25 ˚C –25 ˚C VDS = 10 V 20 60 80 120 ID = 4 A VGS = 4.5 V

Data Sheet G12712EJ1V0DS00 5 µµµµPA1705 SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V ISD - Diode Forward Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VGS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 0.1 0.1 100 0.5 Pulsed 0.1 100 1 000 1 000 0 1 10 100 VDS = 10 V VGS = 0 V f = 1 MHz 100 1 000 1 10 100 VGS - Gate to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Diode Current - A trr - Reverse Recovery Time - ns di/dt = 100 A/ s VGS = 0 µ 0.1 1 10 100 1.0 1.5 VDD = 15 V VGS(on) = 10 V R G = 10 Ω DYNAMIC INPUT/OUTPUT CHARACTERISTICS Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 0 5 1 01 52 0 C oss C rss VDD = 24 V 15 V 6 V VGS VDS td(off) td(on) tr tf 1 000 100 ID = 8 A VGS = 0 V C iss DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - ˚C R DS(on) - Drain to Source On-State Resistance - mΩ –20 0 40 80 120 140 160 ID = 4 A VGS = 4.5 V VGS = 10 V 20 60 100

Data Sheet G12712EJ1V0DS006 µµµµPA1705 [MEMO]

Data Sheet G12712EJ1V0DS00 7 µµµµPA1705 [MEMO]

µµµµPA1705

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