UPA1703

UPA1703 RENESAS | Alldatasheet

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MOS FIELD EFFECT POWER TRANSISTORS µµµµPA1703 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE 1996©Document No. D11494EJ2V0DS00 (2nd edition) Date Published May 2001 NS CP (K) Printed in Japan DATA SHEET The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. The mark # shows major revised points.

DESCRIPTION

This product is N-Channel MOS Field Effect Transis- tor designed for power management applications of notebook computers.

FEATURES

 Super Low On-Resistance RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A) RDS(on)2 = 17 mΩ MAX. (VGS = 4 V, ID = 5.0 A)  Low C iss Ciss = 2180 pF TYP.  Built-in G-S Protection Diode  Small and Surface Mount Package (Power SOP8) ABSOLUTE MAXIMUM RATINGS (TA = 25 °°°°C, all terminals are connected) Drain to Source Voltage V DSS 30 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D(DC) ±10 A Drain Current (pulse) Notes1 ID(pulse) ±40 A Total Power Dissipation (TA = 25 °C) Notes2 PT 2.0 W Channel Temperature T ch 150 °C Storage Temperature T stg −55 to +150 °C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm2 × 0.7 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device acutally used, an addtional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device. PACKAGE DIMENSIONS (in millimeter) 1.27 0.12 M 6.0 ±0.3 4.4 0.40+0.10 –0.05 0.78 MAX. 0.05 MIN. 1.8 MAX. 1.44 0.8 0.5 ±0.2 0.15+0.10 –0.05 5.37 MAX. 0.10 1, 2, 3 5, 6, 7, 8 ; Source ; Gate ; Drain Source Body Diode Gate Protection Diode Gate Drain

µµµµPA1703 ELECTRICAL CHARACTERISTICS (TA = 25 °°°°C, all terminals are connected) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 5.0 A 8.5 10.5 m Ω RDS(on)2 VGS = 4 V, ID = 5.0 A 12 17 m Ω Gate to Source Cutoff Voltage V GS(off) VDS = 10 V, ID = 1 mA 1.0 1.6 2.0 V Forward Transfer Admittance | y fs |V DS = 10 V, ID = 5.0 A 8.0 18 S Drain Leakage Current I DSS VDS = 30 V, VGS = 0 10 µA Gate to Source Leakage Current I GSS VGS = ±20 V, VDS = 0 ±10 µA Input Capacitance C iss VDS = 10 V 2180 pF Output Capacitance C oss VGS = 0 890 pF Reverse Transfer Capacitance C rss f = 1 MHz 370 pF Turn-On Delay Time t d(on) ID = 5.0 A 25 ns Rise Time t r VGS(on) = 10 V 210 ns Turn-Off Delay Time t d(off) VDD = 15 V 120 ns Fall Time t f RG = 10 Ω 75 ns Total Gate Charge Q G ID = 10 A 40 nC Gate to Source Charge Q GS VDD = 24 V 5.6 nC Gate to Drain Charge Q GD VGS = 10 V 9.6 nC Body Diode Forward Voltage V F(S-D) IF = 10 A, VGS = 0 0.73 V Reverse Recovery Time t rr IF = 10 A, VGS = 0 46 ns Reverse Recovery Charge Q rr di/dt = 100 A/µs4 5 n C TEST CIRCUIT 1 Switching Time TEST CIRCUIT 2 Gate Charge PG. R G VGS D.U.T. R L VDD t = 1 sµ Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form VGS 10 % 90 %VGS(on) 10 %0 ID 90 % 90 % td(on) tr td(off) tf 10 % R G = 10 Ω ID ton toff PG. 50 Ω D.U.T. R L VDD IG = 2 mA t Drain to Source On-state Resistance

Data Sheet D11494EJ2V0DS 3 µµµµPA1703 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - °C dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE T A - Ambient Temperature - °C PT - Total Power Dissipation - W 0 200 20 40 60 80 100 120 140 160 100 40 60 80 100 120 140 160 2.8 2.4 2.0 1.6 1.2 0.8 0.4 Mounted on ceramic substrate of 1 200 mm 2 × 0.7 mm TA = 25°C Single Pulse FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V 0.1 1 10 100 ID - Drain Current - A 0.01 0.1 100 PW = 1 ms 10 ms 100 msPower Dissipation Limited ID(DC) = 10 A ID(pulse) = 40 A R DS(on) Limited GS = 4.0 V) Note: Mounted on ceramic substrate of 1200 mm ×0.7 mm 0.001 0.01 0.1 100 1 m TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s 1000 10 m 100 m 1 10 100 1 000 10 µµ 100 rth(t) - Transient Thermal Resistance - C/W° Mounted on ceramic substrate of 1200 mm × 0.7 mm Single Pulse Channel to Ambient

µµµµPA1703 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A | yfs | - Forward Transfer Admittance - S DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE V GS - Gate to Source Voltage - V R DS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE T ch - Channel Temperature - °C VGS(off) - Gate to Source Cutoff Voltage - V ID - Drain Current - A R DS(on) - Drain to Source On-State Resistance - mΩ VDS = 10 V Pulsed 0.1 1 100 10 100 10 15 Pulsed 10 100 Pulsed VDS = 10 V ID = 1 mA –50 0 50 100 150 1.0 2.0 VGS = 10 V VGS = 4 V ID = 5.0 A 1.5 0.5 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V ID - Drain Current - A VGS - Gate to Source Voltage - V ID - Drain Current - A 0.1 0 0.4 0.6 0.8

100 Pulsed

0.20 Pulsed VGS = 10 V 4 V Tch = –25 °C 25 °C 75 °C 125 °C VDS = 10 V Tch = –25 °C 25 °C 75 °C 125 °C FORWARD TRANSFER CHARACTERISTICS

Data Sheet D11494EJ2V0DS 5 µµµµPA1703 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - °C R DS(on) - Drain to Source On-State Resistance - mΩ SOURCE TO DRAIN DIODE FORWARD VOLTAGE V SD - Source to Drain Voltage - V ISD - Diode Forward Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE V DS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 0.1 –50 0 50 100 150 ID = 5.0 A 0.1 100 0.5 Pulsed 0.1 100 1 000 10 000 1 10 100 VGS = 0 f = 1 MHz 100 1 000 1 10 100 VGS - Gate to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT I F - Diode Current - A trr - Reverse Recovery Time - ns di/dt = 100 A/ s V GS = 0 µ 0.1 1 10 100 1.0 1.5 VDD = 15 V VGS(on) = 10 V R G = 10 Ω DYNAMIC INPUT/OUTPUT CHARACTERISTICS Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 0 10 20 30 40 VGS = 4 V 10 V C iss C oss C rss VDD = 24 V 15 V 6 V VGS VDS td(off) td(on) tr tf VGS = 4 V VGS = 0 1 000 100 ID = 10 A

µµµµPA1703 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system C11745E Quality grade on NEC semiconductor devices C11531E Semiconductor device mounting technology manual C10535E Semiconductor device package manual C10943X Guide to quality assurance for semiconductor devices MEI-1202 Application circuits using Power MOS FET TEA-1035 Safe operating area of Power MOS FET TEA-1037

Data Sheet D11494EJ2V0DS 7 µµµµPA1703 [MEMO]

µµµµPA1703 M8E 00. 4 The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard":Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).