UPA1700A

UPA1700A NEC | Alldatasheet

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Technical content

© 1996 DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS µPA1700A PACKAGE DIMENSIONS (in millimeter)

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management of notebook computers.

FEATURES

• Low On-Resistance R DS(on)1 = 27 mΩ Max. (VGS = 10 V, ID = 3.5 A) R DS(on)2 = 50 mΩ Max. (VGS = 4 V, ID = 3.5 A)
• Low Input Capacitance C iss = 820 pF Typ.
• Built-in G-S Protection Diode
• Small and Surface Mount Package (Power SOP8) SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE Document No. G12008EJ1V0DS00 (1st edition) Date Published April 1997 N Printed in Japan The information in this document is subject to change without notice. ABSOLUTE MAXIMUM RATINGS (T A = 25 ˚C, all terminals are connected) Drain to Source Voltage V DSS 30 V Gate to Source Voltage V GSS ±20 V Drain Current (DC) I D(DC) ±7.0 A Drain Current (pulse)Note 1 ID(pulse) ±28 A Total Power Dissipation (TA = 25 °C)Note 2 PT 2.0 W Channel Temperature T ch 150 ˚C Storage Temperature T stg –55 to +150 ˚C Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on ceramic substrate of 1200 mm2 × 1.7 mm The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device acutally used, an additional protection circuit is externally required if voltage exceeding the rated voltage may be applied to this device. Source Body Diode Gate Protection Diode Gate Drain 1.27 0.12 M 6.0 ±0.3 4.4 0.40+0.10 –0.05 0.78 MAX. 0.05 MIN. 1.8 MAX. 1.44 0.8 0.5 ±0.2 0.15+0.10 –0.05 5.37 MAX. 0.10 1, 2, 3 5, 6, 7, 8 ; Source ; Gate ; Drain

µPA1700A ELECTRICAL CHARACTERISTICS (T A = 25 ˚C, all terminals are connected) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 3.5 A 18 27 m Ω R DS(on)2 VGS = 4 V, ID = 3.5 A 28 50 m Ω Gate to Source Cutoff Voltage V GS(off) VDS = 10 V, ID = 1 mA 1.0 1.6 2.0 V Forward Transfer Admittance |y fs|V DS = 10 V, ID = 3.5 A 5.0 9.0 S Drain Leakage Current I DSS VDS = 30 V, VGS = 0 10 µA Gate to Source Leakage Current I GSS VGS = ±20 V, VDS = 0 ±10 µA Input Capacitance C iss VDS = 10 V 820 pF Output Capacitance C oss VGS = 0 350 pF Reverse Transfer Capacitance C rss f = 1 MHz 160 pF Turn-On Delay Time t d(on) ID = 3.5 A 18 ns Rise Time t r VGS(on) = 10 V 98 ns Turn-Off Delay Time t d(off) VDD = 15 V 57 ns Fall Time t f R G = 10 Ω 32 ns Total Gate Charge Q G ID = 7.0 A 20 nC Gate to Source Charge Q GS VDD = 24 V 2.4 nC Gate to Drain Charge Q GD VGS = 10 V 5.6 nC Body Diode Forward Voltage V F(S-D) IF = 7.0 A, VGS = 0 0.79 V Reverse Recovery Time t rr IF = 7.0 A, VGS = 0 36 ns Reverse Recovery Charge Q rr di/dt = 100 A/µs 35 nC Test Circuit 1 Switching Time Test Circuit 2 Gate Charge PG. R G VGS D.U.T. R L VDD t = 1 sµ Duty Cycle ≤ 1 % VGS Wave Form ID Wave Form VGS 10 % 90 %VGS(on) 10 %0 ID 90 % 90 % td(on) tr td(off) tf 10 % t R G = 10 Ω ID ton toff PG. 50 Ω D.U.T. R L VDD IG = 2 mA

µPA1700A FORWARD BIAS SAFE OPERATING AREA VDS - Drain to Source Voltage - V ID - Drain Current - A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TA - Ambient Temperature - °C dT - Percentage of Rated Power - % TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE TA - Ambient Temperature - °C PT - Total Power Dissipation - W 0 200 20 40 60 80 100 120 140 160 100 40 60 80 100 120 140 160 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0.1 0.1 100 1 10 100 TA = 25 °C Single Pulse Mounted on ceramic substrate of 1200 mm 2 × 1.7 mm 1 ms Power Dissipation Limited 100 ms ID(DC) = 7 A 10 ms ID(pulse) = 28 A Note Mounted on ceramic substrate of 1200 mm2 × 1.7 mm RDS(on) Limited (at V GS = 10 V) TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH PW - Pulse Width - s rth(t) - Transient Thermal Resistance - °C/W 0.001 0.01 0.1 100 1 000 10 m 100 m 1 10 100 1000 10 000 100 µ 1m Single Pulse Mounted on ceramic substrate of 1200 mm to 1.7 mm Single Pulse Channel to Ambient

µPA1700A FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT ID - Drain Current - A | yfs | - Forward Transfer Admittance - S DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V R DS(on) - Drain to Source On-State Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - °C VGS(off) - Gate to Source Cutoff Voltage - V ID - Drain Current - A R DS(on) - Drain to Source On-State Resistance - mΩ VDS = 10 V Pulsed 0.1 1 100 10 100 10 15 Pulsed 10 100 Pulsed VDS = 10 V ID = 1 mA –20 0 40 100 140 1.0 2.0 150 100 VGS =10 V VGS = 4 V Tch = –25 °C 25 °C 75 °C 125 °C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE V DS - Drain to Source Voltage - V ID - Drain Current - A FORWARD TRANSFER CHARACTERISTICS VGS - Gate to Source Voltage - V ID - Drain Current - A 0.1 0 0.4 0.6 0.8 101

100 Pulsed

0.20 Pulsed VGS = 10 V 4 V Tch = 125 °C 75 °C 25 °C –25 °C VDS = 10 V 20 60 80 120 ID = 3.5 A

µPA1700A DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Tch - Channel Temperature - °C R DS(on) - Drain to Source On-State Resistance - mΩ SOURCE TO DRAIN DIODE FORWARD VOLTAGE VSD - Source to Drain Voltage - V ISD - Diode Forward Current - A CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE VDS - Drain to Source Voltage - V C iss, Coss, Crss - Capacitance - pF SWITCHING CHARACTERISTICS ID - Drain Current - A td(on), tr, td(off), tf - Switching Time - ns 0.1 –20 0 40 80 120 ID = 3.5 A 0.1 100 0.5 Pulsed 0.1 100 1 000 10 000 1 10 100 VGS = 0 f = 1 MHz 100 1 000 1 10 100 VGS - Gate to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT IF - Diode Current - A trr - Reverse Recovery Time - ns di/dt = 100 A/ s VGS = 0 µ 0.1 1 10 100 1.0 1.5 VDD = 15 V VGS(on) = 10 V R G = 10 Ω DYNAMIC INPUT/OUTPUT CHARACTERISTICS Q G - Gate Charge - nC VDS - Drain to Source Voltage - V 0 5 1 01 52 0 VGS = 4 V 10 V C iss C oss C rss VDD = 24 V 15 V 6 V VGS VDS td(off) td(on) tr tf VGS = 10 V 1 000 100 ID = 7 A 20 60 100 VGS = 0

µPA1700A REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system C11745E Quality grade on NEC semiconductor devices C11531E Semiconductor device mounting technology manual C10535E Semiconductor device package manual C10943X Guide to quality assurance for semiconductor devices MEI-1202 Application circuits using Power MOS FET TEA-1035 Safe operating area of Power MOS FET TEA-1037

µPA1700A [MEMO]

µPA1700A No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96.5